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STMicroelectronics STD38NH02LT4

Part No.:
STD38NH02LT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD38NH02LT4.pdf
Description:
MOSFET N-CH 24V 38A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,315

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Product details

Overview

STD38NH02LT4 from STMicroelectronics is an N-channel logic-level Power MOSFET in DPAK package, rated for 24 V VDSS, 38 A continuous drain current at TC = 25°C, and 0.011 Ω RDS(on) at VGS = 10 V. It employs STripFET™ III technology and is optimized for high-efficiency DC-DC synchronous buck converters as the low-side switch.

For engineers reviewing the STD38NH02LT4 datasheet, STD38NH02LT4 pinout, STD38NH02LT4 application, or STD38NH02LT4 equivalent, key selection criteria include its low gate threshold (1–2.5 V), industry-benchmark RDS(on) × Qg figure of merit, 18 nC total gate charge, and 27 ns reverse recovery time in source-drain diode operation - all critical for minimizing conduction and switching losses in high-frequency power stages.

Technical Context

This MOSFET is designed specifically for low-side switching in synchronous buck topologies, where fast turn-on/turn-off, low Qrr (22 nC), and minimal Coss (305 pF) reduce cross-conduction risk and boost efficiency. Its logic-level drive enables direct interfacing with 3.3 V or 5 V controllers without gate drivers.

The device features a robust safe operating area (SOA), 250 mJ single-pulse avalanche energy rating, and thermal resistance junction-to-case of 3.75 °C/W - enabling reliable operation under transient overloads and high-power density PCB layouts with adequate heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS24 V - Maximum blocking voltage in off-state; suitable for 12–24 V input DC-DC systems.
RDS(on) @ VGS=10 V0.011 Ω - Enables ≤4.3 W conduction loss at 38 A, reducing thermal stress in compact designs.
Qg18 nC - Low gate charge minimizes driver power and enables <100 ns switching transitions with 4.7 Ω gate resistor.
ID (cont.) @ TC=25°C38 A - Rated continuous current supports high-current POL converters up to ~900 W with proper cooling.
trr27 ns - Fast body diode recovery limits shoot-through losses during high-side FET turn-on in synchronous rectification.
Rth(j-case)3.75 °C/W - Allows direct mounting to heatsink or copper pour for thermal management without isolation pads.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-pin, single-die power MOSFET with exposed drain pad for thermal conduction and mechanical anchoring.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Source terminalReference node for gate drive; connects to ground or low-side return path in buck converter.
2 (Gate)Control inputLogic-level compatible (VGS(th) = 1–2.5 V); requires <20 V absolute max per datasheet.
3 (Drain)Power output / high-side connectionExposed metal pad on underside - electrically and thermally connected to Drain; must be routed to input rail and heatsink.

Key Features

FeatureDesign Value
STripFET™ III processEnables ultra-low RDS(on) × Qg product - benchmark for efficiency in 24 V-class power stages.
Logic-level gate driveVGS(th) range 1–2.5 V allows direct control from microcontrollers or PWM ICs without level-shifting.
Low Qrr (22 nC)Reduces dynamic losses in the high-side FET during commutation, critical for >500 kHz synchronous buck designs.
ECOPACK® RoHS-compliantLead-free second-level interconnect; meets JEDEC JESD97 marking standards for environmental compliance.

Applications

Server VRMIndustrial PLC I/O Module

Use Scenario: Point-of-load (POL) voltage regulation for CPU/GPU cores in 1U rack servers requiring 3.3 V/50 A output from 12 V bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter; switches at 600 kHz with 30 ns dead-time control.

Use Value: 0.011 Ω RDS(on) reduces conduction loss by 35% vs. legacy 0.017 Ω devices, lowering junction temperature rise by ~12°C at full load.

Use Scenario: Isolated 24 V DC power supply feeding digital I/O expansion cards in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward converter; operates at 200 kHz with zero-voltage switching assist.

Use Value: 27 ns trr and 1.3 V VSD minimize body-diode conduction loss during transition, improving light-load efficiency by 2.1%.

Automotive ADAS Camera PowerTelecom Base Station RF Bias Supply

Use Scenario: Compact 5 V/15 A power module for CMOS image sensors and SerDes in rear-view camera ECU with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-side switch in monolithic buck controller IC reference design; driven directly from internal 5 V gate driver.

Use Value: Logic-level compatibility eliminates external level shifter, saving board space and BOM cost while maintaining <100 ns turn-on delay.

Use Scenario: Programmable bias supply for GaN HEMT driver stages in 5G massive MIMO RF transceivers requiring precise 8–12 V adjustment.

IC Role / Device Role / Timing Role: Pass element in digitally controlled linear post-regulator cascaded after main buck stage.

Use Value: 250 mJ EAS rating ensures ruggedness against inductive kickback during fast load transients, preventing latch-up or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFRDS(on) = 0.006 Ω @ 10 V but higher Qg (34 nC); VDSS = 30 V; TO-220 package.Higher conduction efficiency but slower switching; unsuitable for >300 kHz due to gate charge penalty.Prefer when thermal budget dominates over switching frequency - e.g., low-frequency industrial motor drives.
DMN3025LFG-7RDS(on) = 0.025 Ω @ 4.5 V; smaller 2×2 mm WDFN package; lower ID rating (12 A).Limited current handling and higher on-resistance; intended for space-constrained consumer DC-DC, not high-power POL.Select only for ultra-compact, low-current (<15 A) applications where DPAK footprint is unacceptable.

Compared with IRL3803PBF and DMN3025LFG-7, STD38NH02LT4 delivers optimal balance of low RDS(on), moderate Qg, and DPAK thermal performance - making it uniquely suited for mid-power, high-frequency synchronous buck converters where both efficiency and layout density matter.

Availability

STD38NH02LT4 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and automotive ADAS camera power supplies requiring stable component supply across multi-year production cycles.

Supply support for STD38NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD38NH02LT4 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally-constrained applications.

FAQ

Is STD38NH02LT4 pin-compatible with STD38NH02L-1?

No. STD38NH02LT4 uses the DPAK (TO-252) package with 3 pins and an exposed drain pad, while STD38NH02L-1 uses the IPAK (TO-251) package - same pinout numbering but different mechanical footprint and thermal pad layout. PCB land patterns are not interchangeable.

What is the maximum recommended gate resistor for 500 kHz switching?

With RG = 4.7 Ω, typical turn-on delay is 7 ns and rise time is 62 ns per datasheet Figure 13. For 500 kHz operation (2 µs period), this yields <3% dead-time overhead. Increasing RG beyond 10 Ω risks excessive switching loss; 3.3–4.7 Ω is optimal for efficiency and EMI trade-off.

Does STD38NH02LT4 support 3.3 V logic-level drive in practice?

Yes. With VGS(th) min = 1.0 V and RDS(on) = 0.015 Ω at VGS = 5 V (and 0.025 Ω at VGS = 4.5 V), it fully enhances under 3.3 V drive when paired with low-impedance gate drivers - verified in ST reference design AN4405 for 3.3 V-controlled POLs.

Can STD38NH02LT4 be used in avalanche mode continuously?

No. The 250 mJ EAS rating is for single-pulse conditions only (Tj = 25°C, ID = 19 A, VDD = 18 V). Continuous avalanche operation is not characterized or guaranteed; repeated unclamped inductive switching will cause cumulative junction degradation and premature failure.

STD38NH02LT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
24 V
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1070 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD38NH02LT4 FAQ

1.How can I place an order for STD38NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD38NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD38NH02LT4 reliable?

The price and inventory of STD38NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD38NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD38NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD38NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD38NH02LT4?

STD38NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD38NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD38NH02LT4?

For technical support, including STD38NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD38NH02LT4 requirements.

6.How does Aetrix verify that STD38NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD38NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD38NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD38NH02LT4?

All STD38NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD38NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD38NH02LT4 part is unused and in its original packaging.

Return procedure for STD38NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD38NH02LT4 Tags

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