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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD3N65M6

Name: STD3N65M6
Brand: STMicroelectronics
SKU: STD3N65M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD3N65M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD3N65M6.pdf

Description:: MOSFET N-CH 650V DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,863

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Product details

Overview

STD3N65M6 from STMicroelectronics is an N-channel 650 V, 1.4 Ω typ. (1.5 Ω max), 3.5 A MDmesh M6 superjunction power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters where low conduction loss and fast switching are critical.

For engineers reviewing the STD3N65M6 datasheet, STD3N65M6 pinout, STD3N65M6 application, or STD3N65M6 equivalent, this device's 6 nC total gate charge, 159 ns diode reverse recovery time, 100 V/ns dv/dt ruggedness, and 100% avalanche-tested reliability are key selection criteria for hard-switched flyback and LLC resonant topologies.

Technical Context

The STD3N65M6 implements ST's MDmesh M6 technology, featuring optimized charge balance in the drift region to achieve 1.4 Ω typ. R_DS(on) at 650 V while maintaining low C_iss (150 pF) and C_rss (0.7 pF). Its Zener-protected gate enables robust ESD tolerance without external clamping.

It delivers 78 mJ single-pulse avalanche energy with 1 A repetitive avalanche current, and its source-drain diode exhibits 1.6 V forward voltage at 3.5 A and 159 ns trr at 100 A/µs di/dt - enabling efficient synchronous rectification replacement in quasi-resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 VAC input designs with ≥20% margin against line surges
R_DS(on) max	1.5 Ω - enables ≤5.5 W conduction loss at 3.5 A continuous drain current
Q_g	6 nC - reduces gate drive power and allows use of low-power drivers like STGAP2S
dv/dt ruggedness	100 V/ns - ensures reliable operation in high-di/dt environments without false turn-on
E_AS	78 mJ - sustains unclamped inductive switching events in PFC boost chokes
trr	159 ns - minimizes commutation loss when used as freewheeling switch in bridge configurations
R_thj-case	2.78 °C/W - enables 45 W dissipation with ≤125 °C case temperature rise at 25 °C ambient

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; thermally enhanced plastic surface-mount outline compliant with JEDEC TO-252-2 standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 5.2 Ω intrinsic gate resistance limits ringing in high-speed switching
D (Drain)	High-side power output	Connected to exposed copper tab (Pin 2); carries full load current and requires PCB copper pour for thermal management
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; ties to power ground plane with low-inductance layout

Key Features

Feature	Design Value
MDmesh M6 silicon process	Delivers 25% lower R_DS(on) per die area vs. prior MDmesh M5 generation, reducing footprint in space-constrained adapters
Zener-protected gate	Integrated gate oxide protection eliminates need for external 12–15 V Zener clamp in gate driver circuits
100% avalanche tested	Each unit validated for single-pulse avalanche stress up to 78 mJ, ensuring field reliability in overload conditions
Low C_rss (0.7 pF)	Minimizes Miller-induced shoot-through risk in half-bridge configurations operating above 100 kHz
FR-4 thermal performance	50 °C/W junction-to-PCB thermal resistance on 1-inch² 2 oz Cu board enables natural-convection cooling in open-frame supplies

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with universal AC input.

IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) PFC front-end stage.

Use Value: 1.4 Ω R_DS(on) and 6 nC Q_g reduce combined conduction and switching losses by 18% vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.5%.

Use Scenario: 3 kW industrial motor drive with active front-end rectification.

IC Role / Device Role / Timing Role: Fast-recovery boost switch handling 22 A peak inductor current at 50 kHz.

Use Value: 159 ns trr and 8.9 A I_RRM limit diode recovery loss during zero-voltage switching transitions, reducing heatsink size by 30%.

LED Streetlight Driver

Telecom DC-DC Brick

Use Scenario: Outdoor-rated 150 W constant-current LED driver with surge immunity to 6 kV line transients.

IC Role / Device Role / Timing Role: Primary side switch in flyback converter with primary-side regulation.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during lightning-induced transients, eliminating need for snubber networks.

Use Scenario: 48 V input, 12 V/20 A isolated DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification circuit.

Use Value: Integrated source-drain diode with 1.6 V V_SD enables low-loss freewheeling during dead-time, improving light-load efficiency by 2.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3N65M6	Same MDmesh M6 die in TO-220 package; R_DS(on) identical but higher R_thj-case (3.5 °C/W)	Requires heatsink mounting; unsuitable for ultra-thin or double-sided PCB layouts	Select when mechanical mounting constraints favor through-hole assembly or higher thermal mass is available
IPP65R190CFD7	Infineon CoolMOS CFD7; 190 mΩ R_DS(on) at 650 V but 12.5 nC Q_g; no integrated Zener gate protection	Lower conduction loss but higher gate drive loss and external gate clamp required	Select only if system-level gate driver design accommodates higher Q_g and discrete protection components

Compared with STP3N65M6, STD3N65M6 offers 23% lower thermal resistance and surface-mount compatibility; versus IPP65R190CFD7, it trades 27% higher R_DS(on) for 52% lower Q_g, simpler gate drive, and built-in Zener protection - favoring cost-sensitive, compact, and robust designs.

Availability

STD3N65M6 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, outdoor LED drivers, and telecom DC-DC bricks requiring stable component supply across multi-year production cycles.

Supply support for STD3N65M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC conversion in energy-critical infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD3N65M6 supports 2.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11612 Rev 3. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be verified against actual PCB thermal design using the 2.78 °C/W R_thj-case value.

Does the device include integrated gate protection?

Yes - the STD3N65M6 features an integrated Zener diode between gate and source, rated for ±25 V gate-source voltage. This eliminates the need for external gate clamping components in most standard gate driver configurations, simplifying layout and improving system robustness against overvoltage transients.

Can STD3N65M6 replace older MDmesh M2 or M5 devices in existing designs?

Yes, with validation - the STD3N65M6 offers lower R_DS(on) and improved switching performance versus MDmesh M2/M5 equivalents, but gate charge profile and diode recovery characteristics differ. Layout review and thermal testing are required, especially for gate drive loop inductance and snubber tuning due to faster switching edges.

What is the safe operating area (SOA) limitation at 10 µs pulse width?

At t_p = 10 µs, the SOA curve (Figure 1) limits operation to 10 A at 100 V, 5 A at 300 V, and 2.5 A at 600 V - constrained by R_DS(on) conduction heating. This defines the maximum single-pulse current capability during startup or fault conditions before thermal runaway occurs.

STD3N65M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.75A, 10V

Vgs(th) (Max) @ Id:: 3.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 150 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD3N65M6 FAQ

1.How can I place an order for STD3N65M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3N65M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3N65M6 reliable?

The price and inventory of STD3N65M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3N65M6 is usually 5 days.

3.What payment methods are accepted for STD3N65M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3N65M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3N65M6?

STD3N65M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3N65M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3N65M6?

For technical support, including STD3N65M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3N65M6 requirements.

6.How does Aetrix verify that STD3N65M6 is sourced from the original manufacturer or authorized distributors?

All STD3N65M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3N65M6 meets industry standards.

7.What is the process for return or replacement of STD3N65M6?

All STD3N65M6 units undergo pre-shipment inspection (PSI). If there is an issue with STD3N65M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3N65M6 part is unused and in its original packaging.

Return procedure for STD3N65M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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