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STMicroelectronics STD3NM60T4

Part No.:
STD3NM60T4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD3NM60T4.pdf
Description:
MOSFET N-CH 600V 3A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,746

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Product details

Overview

STD3NM60T4 from STMicroelectronics is an N-channel 600 V, 1.3 Ω (max), 3 A Zener-protected MDmesh™ Power MOSFET in DPAK package, designed for high-voltage switching in offline SMPS, AC-DC adapters, and lighting ballasts. It delivers 42 W total dissipation at TC = 25°C, features 15 V/ns dv/dt capability, and integrates gate-source Zener diodes for ESD and transient protection.

For engineers reviewing the STD3NM60T4 datasheet, STD3NM60T4 pinout, STD3NM60T4 application, or STD3NM60T4 equivalent, key selection criteria include RDS(on) ≤ 1.5 Ω at VGS = 10 V, avalanche energy rating of 200 mJ, thermal resistance Rthj-case = 3 °C/W, and compatibility with standard DPAK footprint layouts.

Technical Context

This MOSFET employs ST's MDmesh™ technology-enhancing the PowerMESH™ horizontal layout with a multiple drain process-to achieve low on-resistance while maintaining robust avalanche ruggedness and high dv/dt immunity. Its integrated back-to-back gate-source Zener diodes (BVGSO = 30 V) eliminate need for external clamping components.

Dynamic performance is optimized for hard-switched topologies: Ciss = 324 pF, Qg = 14 nC, and td(on)/tr/td(off)/tf = 9/4/16.5/10.5 ns under standardized 300 V, 1.5 A resistive load conditions with RG = 4.7 Ω.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports primary-side switching in universal-input (85–265 VAC) offline converters without derating
RDS(on) max1.5 Ω @ VGS = 10 V, ID = 1.5 A - enables <1.5 W conduction loss at 3 A continuous current
ID (TC = 25°C)3 A - rated for continuous operation in compact DPAK heatsink-limited designs
EAS200 mJ - withstands unclamped inductive switching events in flyback and forward converters
dv/dt15 V/ns - ensures noise-immune operation in high-speed, high-voltage switching nodes
Rthj-case3 °C/W - allows direct mounting to PCB copper pour or small heatsink for thermal management
Qg14 nC - determines gate drive power requirement and switching speed trade-off in 50–100 kHz SMPS

Pinout & Package

STD3NM60T4 is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal requiring ≤ ±30 V bias; integrated Zener clamps transients to ±30 V
2 (D)DrainMain high-voltage power terminal; electrically and thermally connected to exposed metal pad
3 (S)SourcePower return and reference node; tied to PCB ground plane for low-impedance source path

Key Features

FeatureDesign Value
Zener-protected gateBuilt-in ±30 V gate-source Zener diodes eliminate need for external TVS, reducing BOM count and board space
High avalanche ruggednessRated for 1.5 A repetitive avalanche current and 200 mJ single-pulse energy-enables reliable unclamped inductive switching
Low gate chargeQg = 14 nC minimizes driver losses and simplifies gate drive design in 50–100 kHz applications
Tight RDS(on) distributionManufactured with high-yield, tightly controlled process ensuring consistent on-resistance across production lots
ESD-enhanced structureImproved human-body-model (HBM) ESD rating supports robust handling during assembly and rework

Applications

LED DriverAC-DC Adapter

Use Scenario: Constant-current buck or flyback LED driver for commercial lighting (20–100 W).

IC Role / Device Role / Timing Role: Primary high-side switch controlling energy transfer to LED string.

Use Value: 600 V rating handles reflected voltage spikes in flyback topology; 1.5 Ω RDS(on) limits conduction loss to <1.5 W at 3 A peak current.

Use Scenario: Universal-input (85–265 VAC) offline adapter for consumer electronics.

IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback converter.

Use Value: 15 V/ns dv/dt capability prevents false triggering during line transients; 200 mJ EAS absorbs leakage inductance energy safely.

Industrial Power SupplyElectronic Ballast

Use Scenario: 24 V/3 A regulated output supply for PLC I/O modules or sensors.

IC Role / Device Role / Timing Role: Primary switch in forward or half-bridge topology operating at 60–80 kHz.

Use Value: Rthj-case = 3 °C/W enables thermal management via 2 oz copper pour, avoiding discrete heatsink.

Use Scenario: High-frequency electronic ballast for fluorescent lamps (20–60 kHz).

IC Role / Device Role / Timing Role: Half-bridge switch driving resonant tank with high dv/dt stress.

Use Value: Integrated Zener protection suppresses gate overvoltage from transformer coupling, eliminating external clamp diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK60Z600 V, 2.2 Ω RDS(on), TO-220 package, lower gate charge (8.5 nC), no integrated ZenerRequires external gate protection; better suited for through-hole designs with larger heatsinksSelect when lower Qg and higher peak current (4.5 A) are prioritized over SMT integration and built-in clamping
FQP3N60C600 V, 2.4 Ω RDS(on), TO-220FP package, no Zener, higher Rthj-case (2.5 °C/W but larger case)Lacks integrated transient protection; requires external gate resistor + TVS for robustnessChoose for cost-sensitive industrial supplies where external protection is already implemented and thermal margin exists

Compared with STP3NK60Z and FQP3N60C, STD3NM60T4 trades slightly higher RDS(on) for surface-mount DPAK form factor, integrated Zener clamping, and tighter process control-making it optimal for space-constrained, high-reliability AC-DC and lighting designs where gate protection and manufacturability are critical.

Availability

STD3NM60T4 is available at Aetrix Electronics and suitable for offline SMPS, LED drivers, and electronic ballasts requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and commercial programs.

Supply support for STD3NM60T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative silicon solutions for automotive, industrial, and power applications since 1987.

STD3NM60T4 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for efficiency-critical, high-reliability offline power conversion in compact, cost-sensitive designs.

FAQ

What is the maximum junction temperature and thermal resistance of STD3NM60T4?

The absolute maximum junction temperature is 150°C. Its thermal resistance from junction to case is 3°C/W (max), measured under standard DPAK mounting conditions on FR4 PCB with 1-inch² 2-oz copper pour. This value assumes full solder coverage of the exposed drain pad and defines the upper limit of steady-state power dissipation before thermal derating begins.

Does STD3NM60T4 include internal gate protection, and what is its breakdown voltage?

Yes, STD3NM60T4 integrates back-to-back gate-source Zener diodes with a specified breakdown voltage (BVGSO) of 30 V at IGS = ±1 mA. This protects against electrostatic discharge and gate overvoltage transients, eliminating the need for external clamping components in most standard switching applications.

Can STD3NM60T4 be used in avalanche mode, and what are its rated avalanche parameters?

Yes, STD3NM60T4 is fully rated for repetitive and non-repetitive avalanche operation. It supports 1.5 A avalanche current (IAR) and 200 mJ single-pulse avalanche energy (EAS) at Tj = 25°C with VDD = 50 V and ID = IAR. These values are validated per JEDEC JESD24-11 and enable safe operation in unclamped inductive switching circuits.

What is the gate threshold voltage range, and how does it affect drive requirements?

The gate threshold voltage (VGS(th)) is specified from 3 V (min) to 5 V (max) at ID = 250 µA. This ensures reliable turn-on with standard 10 V gate drive while providing margin against false triggering from noise. A 10 V drive guarantees full enhancement and minimal RDS(on), whereas 5 V drive yields partial conduction and higher on-resistance.

STD3NM60T4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
324 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD3NM60T4 FAQ

1.How can I place an order for STD3NM60T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD3NM60T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD3NM60T4 reliable?

The price and inventory of STD3NM60T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD3NM60T4 is usually 5 days.

3.What payment methods are accepted for STD3NM60T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD3NM60T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD3NM60T4?

STD3NM60T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD3NM60T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD3NM60T4?

For technical support, including STD3NM60T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD3NM60T4 requirements.

6.How does Aetrix verify that STD3NM60T4 is sourced from the original manufacturer or authorized distributors?

All STD3NM60T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD3NM60T4 meets industry standards.

7.What is the process for return or replacement of STD3NM60T4?

All STD3NM60T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD3NM60T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD3NM60T4 part is unused and in its original packaging.

Return procedure for STD3NM60T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD3NM60T4 Tags

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