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STMicroelectronics STD4NS25T4

Part No.:
STD4NS25T4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD4NS25T4.pdf
Description:
MOSFET N-CH 250V 4A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,494

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Product details

Overview

STD4NS25T4 from STMicroelectronics is an N-channel 250 V, 4 A power MOSFET in DPAK (TO-252) package with RDS(on) = 0.9 Ω at VGS = 10 V, 100% avalanche tested, and rated for 5 V/ns dv/dt capability-designed for high-speed switching in SMPS and lighting ballast converters.

For engineers reviewing the STD4NS25T4 datasheet, STD4NS25T4 pinout, STD4NS25T4 application, or STD4NS25T4 equivalent, key selection criteria include its 250 V breakdown voltage, 4 A continuous drain current at TC = 25 °C, 124 ns reverse recovery time, and DPAK thermal resistance of 2.5 °C/W-critical for thermally constrained industrial DC-DC and telecom power stages.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination to achieve high ruggedness and stable switching under inductive load conditions. It supports unclamped inductive switching with 120 mJ single-pulse avalanche energy and operates up to 150 °C junction temperature.

The device integrates a fast-recovery body diode (trr = 124 ns, Qrr = 0.5 µC) and exhibits low gate charge (Qg = 19–27 nC), enabling efficient operation in hard-switched topologies above 100 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS250 V - supports input rails up to 200 V DC in offline SMPS without derating
RDS(on)0.9 Ω (typ) at VGS = 10 V - limits conduction loss to ≤14.4 W at 4 A continuous
ID (cont)4 A at TC = 25 °C - requires heatsinking above ~65 °C case temperature
EAS120 mJ - enables robust operation in flyback/LLC circuits with unclamped inductive transients
trr124 ns - reduces switching loss and EMI in high-frequency DC-DC converters
Qg19–27 nC - compatible with standard 1 A gate drivers at ≤500 kHz switching
Rthj-case2.5 °C/W - allows 20 W dissipation before reaching 150 °C junction limit at 25 °C case

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-ended heat transfer via exposed drain pad.

Pin/TerminalCircuit RoleDesign Meaning
1 (GATE)Control terminalAccepts 0–10 V logic-level drive; threshold 2–4 V enables TTL/CMOS compatibility
2 (SOURCE)Reference node / return pathCommon source connection for low-side switch configuration; ties to PCB ground plane
3 (DRAIN)Power output / high-side nodeExposed metal pad electrically connected to drain; primary thermal path to heatsink

Key Features

FeatureDesign Value
100% avalanche testedGuarantees single-pulse ruggedness to 120 mJ at Tj = 25 °C-no screening failure in production
5 V/ns dv/dt capabilityPrevents false turn-on during fast transient events in high-noise industrial environments
MESH OVERLAY™ processEnables uniform electric field distribution across die edge-reducing leakage and improving long-term reliability
Low Ciss/Coss ratio (355 pF / 64 pF)Improves Miller immunity and enables stable gate drive in high-side configurations

Applications

LED Driver BallastsTelecom DC-DC Converters

Use Scenario: High-efficiency constant-current LED driver for street lighting using buck-boost topology.

IC Role / Device Role / Timing Role: Primary switching element in primary-side regulation, operating at 100–250 kHz.

Use Value: 0.9 Ω RDS(on) minimizes conduction loss at 4 A peak, while 124 ns trr suppresses diode-induced ringing.

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in forward/flyback topology.

Use Value: 250 V rating accommodates reflected transients; 2.5 °C/W Rthj-case enables compact heatsink design.

Industrial SMPSLighting Electronic Ballasts

Use Scenario: 200 W open-frame AC-DC power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main power switch in LLC resonant half-bridge primary stage.

Use Value: 5 V/ns dv/dt tolerance prevents spurious turn-on during zero-voltage switching transitions.

Use Scenario: High-frequency electronic ballast for fluorescent lamps in commercial HVAC systems.

IC Role / Device Role / Timing Role: High-side switch controlling lamp current in series-resonant inverter.

Use Value: Avalanche-rated structure withstands lamp ignition surges up to 250 V without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK25ZRDS(on) = 1.2 Ω (typ), TO-220 package, no avalanche ratingLacks 100% avalanche testing; higher conduction loss at same currentLower cost where surge immunity is not required and board space permits through-hole mounting
IRF640NPBFRDS(on) = 0.18 Ω (typ), but only 200 V VDSS; TO-220Insufficient voltage margin for 230 VAC-derived rails; unsuitable for universal-input designsOnly viable in low-line (<150 VDC) DC-DC applications with tight RDS(on) requirements

Compared with STP4NK25Z and IRF640NPBF, STD4NS25T4 uniquely combines 250 V rating, 0.9 Ω on-resistance, DPAK footprint, and guaranteed avalanche ruggedness-making it optimal for compact, high-reliability lighting and telecom power stages where voltage margin and transient robustness are non-negotiable.

Availability

STD4NS25T4 is available at Aetrix Electronics and suitable for LED driver ballasts, telecom DC-DC converters, and industrial SMPS requiring stable component supply with full traceability and long-lifecycle support.

Supply support for STD4NS25T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STD4NS25T4 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-frequency switching in lighting, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD4NS25T4 supports 2.5 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual PCB copper area and ambient airflow in the final layout.

Is STD4NS25T4 suitable for use as a synchronous rectifier?

No-STD4NS25T4 is optimized as a primary-side switch, not a low-VDS synchronous rectifier. Its body diode has 1.5 V forward voltage at 4 A and 124 ns reverse recovery time, which incurs excessive loss compared to dedicated SR MOSFETs with <0.5 V VSD and <50 ns trr.

Does the "T4" suffix affect electrical performance?

No-the "T4" suffix indicates tape-and-reel packaging (1,000 pcs per reel) and does not alter electrical specifications, thermal characteristics, or reliability. All parametric data in the datasheet applies identically to STD4NS25 and STD4NS25T4.

Can STD4NS25T4 replace STD4NK25 in existing designs?

Not directly-STD4NK25 is a 250 V, 4 A MOSFET but uses older planar technology without MESH OVERLAY™, resulting in lower dv/dt capability (3 V/ns vs 5 V/ns) and no guaranteed avalanche rating. Redesign validation is required for surge-prone lighting or telecom applications.

STD4NS25T4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MESH OVERLAY™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
355 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD4NS25T4 FAQ

1.How can I place an order for STD4NS25T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD4NS25T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD4NS25T4 reliable?

The price and inventory of STD4NS25T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD4NS25T4 is usually 5 days.

3.What payment methods are accepted for STD4NS25T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD4NS25T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD4NS25T4?

STD4NS25T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD4NS25T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD4NS25T4?

For technical support, including STD4NS25T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD4NS25T4 requirements.

6.How does Aetrix verify that STD4NS25T4 is sourced from the original manufacturer or authorized distributors?

All STD4NS25T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD4NS25T4 meets industry standards.

7.What is the process for return or replacement of STD4NS25T4?

All STD4NS25T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD4NS25T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD4NS25T4 part is unused and in its original packaging.

Return procedure for STD4NS25T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD4NS25T4 Tags

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