STMicroelectronics STD4NS25T4
- Part No.:
- STD4NS25T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD4NS25T4.pdf
- Description:
- MOSFET N-CH 250V 4A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,494
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STD4NS25T4 from STMicroelectronics is an N-channel 250 V, 4 A power MOSFET in DPAK (TO-252) package with RDS(on) = 0.9 Ω at VGS = 10 V, 100% avalanche tested, and rated for 5 V/ns dv/dt capability-designed for high-speed switching in SMPS and lighting ballast converters.
For engineers reviewing the STD4NS25T4 datasheet, STD4NS25T4 pinout, STD4NS25T4 application, or STD4NS25T4 equivalent, key selection criteria include its 250 V breakdown voltage, 4 A continuous drain current at TC = 25 °C, 124 ns reverse recovery time, and DPAK thermal resistance of 2.5 °C/W-critical for thermally constrained industrial DC-DC and telecom power stages.
Technical Context
This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination to achieve high ruggedness and stable switching under inductive load conditions. It supports unclamped inductive switching with 120 mJ single-pulse avalanche energy and operates up to 150 °C junction temperature.
The device integrates a fast-recovery body diode (trr = 124 ns, Qrr = 0.5 µC) and exhibits low gate charge (Qg = 19–27 nC), enabling efficient operation in hard-switched topologies above 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - supports input rails up to 200 V DC in offline SMPS without derating |
| RDS(on) | 0.9 Ω (typ) at VGS = 10 V - limits conduction loss to ≤14.4 W at 4 A continuous |
| ID (cont) | 4 A at TC = 25 °C - requires heatsinking above ~65 °C case temperature |
| EAS | 120 mJ - enables robust operation in flyback/LLC circuits with unclamped inductive transients |
| trr | 124 ns - reduces switching loss and EMI in high-frequency DC-DC converters |
| Qg | 19–27 nC - compatible with standard 1 A gate drivers at ≤500 kHz switching |
| Rthj-case | 2.5 °C/W - allows 20 W dissipation before reaching 150 °C junction limit at 25 °C case |
Pinout & Package
Package: DPAK (TO-252), surface-mount, single-ended heat transfer via exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control terminal | Accepts 0–10 V logic-level drive; threshold 2–4 V enables TTL/CMOS compatibility |
| 2 (SOURCE) | Reference node / return path | Common source connection for low-side switch configuration; ties to PCB ground plane |
| 3 (DRAIN) | Power output / high-side node | Exposed metal pad electrically connected to drain; primary thermal path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness to 120 mJ at Tj = 25 °C-no screening failure in production |
| 5 V/ns dv/dt capability | Prevents false turn-on during fast transient events in high-noise industrial environments |
| MESH OVERLAY™ process | Enables uniform electric field distribution across die edge-reducing leakage and improving long-term reliability |
| Low Ciss/Coss ratio (355 pF / 64 pF) | Improves Miller immunity and enables stable gate drive in high-side configurations |
Applications
| LED Driver Ballasts | Telecom DC-DC Converters |
|---|---|
Use Scenario: High-efficiency constant-current LED driver for street lighting using buck-boost topology. IC Role / Device Role / Timing Role: Primary switching element in primary-side regulation, operating at 100–250 kHz. Use Value: 0.9 Ω RDS(on) minimizes conduction loss at 4 A peak, while 124 ns trr suppresses diode-induced ringing. | Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in telecom shelf power systems. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in forward/flyback topology. Use Value: 250 V rating accommodates reflected transients; 2.5 °C/W Rthj-case enables compact heatsink design. |
| Industrial SMPS | Lighting Electronic Ballasts |
Use Scenario: 200 W open-frame AC-DC power supply for factory automation controllers. IC Role / Device Role / Timing Role: Main power switch in LLC resonant half-bridge primary stage. Use Value: 5 V/ns dv/dt tolerance prevents spurious turn-on during zero-voltage switching transitions. | Use Scenario: High-frequency electronic ballast for fluorescent lamps in commercial HVAC systems. IC Role / Device Role / Timing Role: High-side switch controlling lamp current in series-resonant inverter. Use Value: Avalanche-rated structure withstands lamp ignition surges up to 250 V without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK25Z | RDS(on) = 1.2 Ω (typ), TO-220 package, no avalanche rating | Lacks 100% avalanche testing; higher conduction loss at same current | Lower cost where surge immunity is not required and board space permits through-hole mounting |
| IRF640NPBF | RDS(on) = 0.18 Ω (typ), but only 200 V VDSS; TO-220 | Insufficient voltage margin for 230 VAC-derived rails; unsuitable for universal-input designs | Only viable in low-line (<150 VDC) DC-DC applications with tight RDS(on) requirements |
Compared with STP4NK25Z and IRF640NPBF, STD4NS25T4 uniquely combines 250 V rating, 0.9 Ω on-resistance, DPAK footprint, and guaranteed avalanche ruggedness-making it optimal for compact, high-reliability lighting and telecom power stages where voltage margin and transient robustness are non-negotiable.
Availability
STD4NS25T4 is available at Aetrix Electronics and suitable for LED driver ballasts, telecom DC-DC converters, and industrial SMPS requiring stable component supply with full traceability and long-lifecycle support.
Supply support for STD4NS25T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
STD4NS25T4 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-frequency switching in lighting, telecom, and industrial power conversion systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD4NS25T4 supports 2.5 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual PCB copper area and ambient airflow in the final layout.
Is STD4NS25T4 suitable for use as a synchronous rectifier?
No-STD4NS25T4 is optimized as a primary-side switch, not a low-VDS synchronous rectifier. Its body diode has 1.5 V forward voltage at 4 A and 124 ns reverse recovery time, which incurs excessive loss compared to dedicated SR MOSFETs with <0.5 V VSD and <50 ns trr.
Does the "T4" suffix affect electrical performance?
No-the "T4" suffix indicates tape-and-reel packaging (1,000 pcs per reel) and does not alter electrical specifications, thermal characteristics, or reliability. All parametric data in the datasheet applies identically to STD4NS25 and STD4NS25T4.
Can STD4NS25T4 replace STD4NK25 in existing designs?
Not directly-STD4NK25 is a 250 V, 4 A MOSFET but uses older planar technology without MESH OVERLAY™, resulting in lower dv/dt capability (3 V/ns vs 5 V/ns) and no guaranteed avalanche rating. Redesign validation is required for surge-prone lighting or telecom applications.
STD4NS25T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MESH OVERLAY™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 355 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD4NS25T4 FAQ
1.How can I place an order for STD4NS25T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD4NS25T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD4NS25T4 reliable?
The price and inventory of STD4NS25T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD4NS25T4 is usually 5 days.
3.What payment methods are accepted for STD4NS25T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD4NS25T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD4NS25T4?
STD4NS25T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD4NS25T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD4NS25T4?
For technical support, including STD4NS25T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD4NS25T4 requirements.
6.How does Aetrix verify that STD4NS25T4 is sourced from the original manufacturer or authorized distributors?
All STD4NS25T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD4NS25T4 meets industry standards.
7.What is the process for return or replacement of STD4NS25T4?
All STD4NS25T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD4NS25T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD4NS25T4 part is unused and in its original packaging.
Return procedure for STD4NS25T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STD4NS25T4 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)