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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD50N03L

Name: STD50N03L
Brand: STMicroelectronics
SKU: STD50N03L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD50N03L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD50N03L.pdf

Description:: MOSFET N-CH 30V 40A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD50N03L from STMicroelectronics is an N-channel 30V, 40A, 9.2mΩ DPAK Power MOSFET based on STripFET™ III technology, designed for high-efficiency DC-DC converters and synchronous buck low-side switching. It delivers low conduction loss (R_DS(on) = 9.2 mΩ @ V_GS = 10 V), fast switching (t_d(off) = 14 ns), and robust avalanche capability (E_AS = 230 mJ).

For engineers reviewing the STD50N03L datasheet, STD50N03L pinout, STD50N03L application, or STD50N03L equivalent, key selection criteria include R_DS(on)/Q_g trade-off, thermal resistance (R_thJ-Case = 2.5 °C/W), source-drain diode recovery (Q_rr = 15.6 nC), and DPAK package compatibility with automated PCB assembly.

Technical Context

This MOSFET operates as a low-side switch in synchronous buck topologies, where its low threshold voltage (V_GS(th) = 1 V typ.) enables direct drive from 3.3 V or 5 V controllers. Its optimized gate charge profile (Q_g = 10.4 nC typ., Q_gd = 3.7 nC) minimizes Miller-induced switching delay and cross-conduction risk.

The device integrates a fast-recovery body diode (t_rr = 26 ns, Q_rr = 15.6 nC @ T_j = 25°C) critical for minimizing dead-time losses and reverse recovery spikes in high-frequency converters operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rail systems with margin.
R_DS(on)	9.2 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 40 A continuous current (T_C = 25°C).
I_D (cont)	40 A @ T_C = 25°C - Rated for high-current low-side switching in server VRMs and industrial power supplies.
Q_g	10.4 nC - Total gate charge determines driver strength requirement; supports ≥1 MHz switching with moderate gate resistance.
E_AS	230 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive load transients or startup faults.
R_thJ-Case	2.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density designs.
Q_rr	15.6 nC @ T_j = 25°C - Low reverse recovery charge reduces turn-on loss in high-side FET during commutation.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-pin, single-die layout with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Common return path for load current; electrically tied to PCB ground plane via multiple vias under exposed pad.
2 (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing and local decoupling to suppress ringing.
3 (Drain)	Power output / High-side connection	Internally connected to exposed metal pad; must be soldered to large copper area for thermal dissipation and low-inductance current return.

Key Features

Feature	Design Value
STripFET™ III process	Enables industry-leading R_DS(on) × Q_g figure-of-merit for optimized efficiency across light-to-full load conditions.
Low V_GS(th)	1 V typical threshold allows direct interface with 3.3 V microcontrollers and PWM controllers without level-shifting.
Fast body diode	t_rr = 26 ns and Q_rr = 15.6 nC reduce shoot-through risk and improve light-load efficiency in synchronous rectification.
ECOPACK® compliance	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for environmental safety and reliability.

Applications

Server VRM

Industrial DC-DC Converter

Use Scenario: High-current, high-frequency point-of-load regulation in 1U server motherboards delivering 50–100 A to CPUs/GPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz–1 MHz multiphase buck converter; handles peak currents up to 40 A per phase.

Use Value: 9.2 mΩ R_DS(on) limits conduction loss to <1.5 W/phase, enabling >94% efficiency at full load with minimal heatsinking.

Use Scenario: 24 V input to 5/3.3 V conversion in programmable logic controllers and motor drive I/O modules.

IC Role / Device Role / Timing Role: Primary low-side switch in isolated or non-isolated buck regulator powering FPGA, MCU, and analog circuitry.

Use Value: Robust 230 mJ avalanche rating withstands inductive kickback from solenoid drivers and relay coils during fault events.

Automotive Body Control Module

Telecom Power Shelf

Use Scenario: Load switching for interior lighting, HVAC actuators, and window lift motors in 12 V battery-powered systems.

IC Role / Device Role / Timing Role: High-current load switch controlled by CAN/LIN microcontroller GPIO; operated in linear or PWM mode.

Use Value: 1 V V_GS(th) ensures reliable turn-on even at cold-crank battery voltages down to 6 V, preventing unintended shutdown.

Use Scenario: Intermediate bus conversion (48 V → 12 V) in distributed telecom power architectures with strict thermal constraints.

IC Role / Device Role / Timing Role: Low-side FET in interleaved dual-phase buck converter operating at 400 kHz with forced-air cooling.

Use Value: 2.5 °C/W R_thJ-Case enables junction temperature rise of only ~60°C at 40 A, supporting continuous operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 27 nC; TO-220AB package	Higher gate charge increases driver loss; through-hole mounting limits board density	Preferred when higher current margin (60 A) and legacy through-hole assembly are required
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 4.5 V; SO-8 package; 30 V rating	Lower voltage rating (30 V max); smaller package limits thermal handling (P_TOT = 2.5 W)	Selected for space-constrained 5 V logic-driven loads where ultra-low R_DS(on) at low V_GS is critical

Compared with IRL3803PbF and DMN3025LSD-13, STD50N03L uniquely balances low R_DS(on), moderate Q_g, DPAK thermal performance, and 30 V system margin-making it optimal for cost-sensitive, medium-power synchronous buck converters requiring surface-mount scalability and field-proven ruggedness.

Availability

STD50N03L is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for STD50N03L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

STD50N03L belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for STD50N03L at 100°C case temperature?

The maximum continuous drain current is 36 A at T_C = 100°C, as specified in Table 1 of the datasheet. This reflects thermal derating from the 40 A rating at 25°C due to reduced heat dissipation capability at elevated temperatures, with a derating factor of 0.4 W/°C applied to the 60 W total dissipation limit.

Does STD50N03L support gate drive from a 3.3 V microcontroller without a level shifter?

Yes. With a typical gate threshold voltage of 1 V and guaranteed turn-on at V_GS ≥ 2.5 V, STD50N03L achieves full enhancement and low R_DS(on) using standard 3.3 V logic outputs. However, for lowest conduction loss (9.2 mΩ), a 10 V gate drive is recommended; 3.3 V yields ~12 mΩ R_DS(on) per Table 3.

How does the body diode recovery performance compare between STD50N03L and standard planar MOSFETs?

STD50N03L exhibits t_rr = 26 ns and Q_rr = 15.6 nC at 25°C, significantly faster than legacy planar devices (typically >50 ns, >30 nC). This results from STripFET™ III's optimized epitaxial layer and body diode doping profile, reducing reverse recovery loss and EMI in synchronous rectification.

Can STD50N03L be used in avalanche-mode operation for clamping transient overvoltage?

Yes. The device is rated for 230 mJ single-pulse avalanche energy (E_AS) with starting T_j = 25°C, ID = 20 A, and V_DD = 15 V. This makes it suitable for unclamped inductive switching protection, provided pulse duration, duty cycle, and junction temperature remain within safe operating area limits defined in Figure 1.

STD50N03L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1434 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD50N03L FAQ

1.How can I place an order for STD50N03L through Aetrix?

Please submit a Request for Quotation (RFQ) for STD50N03L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD50N03L reliable?

The price and inventory of STD50N03L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD50N03L is usually 5 days.

3.What payment methods are accepted for STD50N03L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD50N03L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD50N03L?

STD50N03L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD50N03L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD50N03L?

For technical support, including STD50N03L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD50N03L requirements.

6.How does Aetrix verify that STD50N03L is sourced from the original manufacturer or authorized distributors?

All STD50N03L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD50N03L meets industry standards.

7.What is the process for return or replacement of STD50N03L?

All STD50N03L units undergo pre-shipment inspection (PSI). If there is an issue with STD50N03L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD50N03L part is unused and in its original packaging.

Return procedure for STD50N03L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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