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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD50N03L-1

Name: STD50N03L-1
Brand: STMicroelectronics
SKU: STD50N03L-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD50N03L-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD50N03L-1.pdf

Description:: MOSFET N-CH 30V 40A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,951

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Product details

Overview

STD50N03L-1 from STMicroelectronics is an N-channel 30V, 40A Power MOSFET in IPAK (TO-251) package with R_DS(on) = 10.5 mΩ at V_GS = 10 V, optimized for high-efficiency DC-DC converters and synchronous buck low-side switching. It features low gate charge (Q_g = 10.4 nC), fast switching (t_d(off) = 14 ns), and integrated source-drain diode with Q_rr = 15.6 nC at T_j = 25°C.

For engineers reviewing the STD50N03L-1 datasheet, STD50N03L-1 pinout, STD50N03L-1 application, or STD50N03L-1 equivalent, this device is selected for low-conduction-loss, high-current switching in power supplies where thermal resistance junction-to-case (2.5 °C/W) and avalanche energy rating (230 mJ) are critical design constraints.

Technical Context

This MOSFET employs ST's STripFET™ III process to achieve industry-leading R_DS(on) × Q_g product, enabling reduced conduction and switching losses simultaneously. Its 1 V gate threshold voltage supports 4.5 V logic-level drive, and its low C_oss (294 pF) and C_rss (48 pF) minimize Miller-induced turn-on risk in synchronous topologies.

The device is rated for continuous drain current of 40 A at T_C = 25°C and derates linearly to 36 A at T_C = 100°C. Its safe operating area (SOA) supports pulsed currents up to 160 A, and its unclamped inductive switching capability is validated per Figure 15–16 in the datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V input DC-DC stages
R_DS(on)	10.5 mΩ @ V_GS = 10 V - Enables <1.7 W conduction loss at 40 A
I_D (cont)	40 A @ T_C = 25°C - Supports high-current low-side switch in 100–200 W buck converters
Q_g	10.4 nC - Reduces gate drive power and enables 1 MHz+ switching with moderate driver strength
E_AS	230 mJ - Withstands single-pulse inductive energy without failure in non-clamped operation
R_thJ-Case	2.5 °C/W - Allows direct heatsinking to PCB copper or small external heatsink for thermal management
V_GS(th)	1 V (min) - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

STD50N03L-1 uses the TO-251 (IPAK) package: a 3-pin, surface-mount, single-die power package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤±20 V bias; low input capacitance (C_iss = 1434 pF) eases drive design
Pin 2 (D)	Drain	High-side node connection; electrically and thermally tied to exposed metal tab; must be isolated from PCB ground plane
Pin 3 (S)	Source	Power return path and reference for gate drive; connects to low-side switch node or ground in buck topology

Key Features

Feature	Design Value
STripFET™ III process	Delivers benchmark R_DS(on) × Q_g ratio for simultaneous conduction and switching loss reduction
Low Q_rr (15.6 nC)	Minimizes reverse recovery loss in synchronous rectification, reducing cross-conduction risk on high-side FET
Integrated body diode	Enables freewheeling in buck converters without external diode; trr = 26 ns ensures fast commutation
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 marking requirements
100% avalanche tested	Guarantees robustness under unclamped inductive switching stress per Figure 15 test circuit

Applications

Server VRM

Industrial DC-DC Module

Use Scenario: Voltage regulation for CPU/GPU cores in 1U server motherboards requiring 30–60 A output at ≤1.2 V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 10.5 mΩ R_DS(on) limits conduction loss to <0.5 W at 35 A, enabling >92% efficiency at full load.

Use Scenario: Isolated 24 V to 5 V/12 V DC-DC conversion in programmable logic controllers (PLCs) with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in secondary-side synchronous buck stage; operates at 300 kHz with forced-air cooling.

Use Value: 2.5 °C/W R_thJ-Case allows stable 40 A operation at T_C = 90°C without active cooling.

Automotive Body Control Module

Telecom Point-of-Load Converter

Use Scenario: 12 V input buck regulator supplying 3.3 V to CAN transceivers and microcontrollers in BCMs.

IC Role / Device Role / Timing Role: Low-side switch in compact 2-layer PCB layout; driven by integrated controller with 4.5 V gate output.

Use Value: 1 V V_GS(th) ensures guaranteed turn-on across automotive battery range (9–16 V) without level-shifting.

Use Scenario: High-density 48 V to 3.3 V PoL converter in 1RU telecom shelf with strict thermal envelope.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in interleaved dual-phase buck; switched at 800 kHz with ceramic output capacitors.

Use Value: Low C_oss (294 pF) and C_rss (48 pF) reduce switching loss and EMI generation at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 6.0 mΩ @ V_GS = 10 V; Q_g = 42 nC; TO-220AB package	Higher conduction loss margin but significantly higher gate charge increases drive complexity and switching loss	Prefer when board space permits TO-220 and thermal mass supports higher R_thJ-Amb
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ V_GS = 10 V; SO-8 package; max I_D = 17 A	Lower R_DS(on) but limited current rating and higher R_thJ-Case (5.5 °C/W)	Select only for <20 A applications where footprint and cost outweigh thermal performance needs

Compared with IRL3803PbF and DMN3025LSD-13, STD50N03L-1 uniquely balances 40 A current handling, 10.5 mΩ R_DS(on), and 10.4 nC Q_g in a thermally efficient IPAK package-making it optimal for space-constrained, high-current, medium-frequency DC-DC designs.

Availability

STD50N03L-1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and automotive body control units requiring stable component supply and long-term production continuity.

Supply support for STD50N03L-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in DC-DC converters, motor drivers, and power supplies where R_DS(on)/Q_g optimization is critical.

FAQ

What is the maximum continuous drain current for STD50N03L-1 at 100°C case temperature?

The maximum continuous drain current is 36 A at T_C = 100°C, as specified in Table 1 (Electrical Ratings). This value reflects linear derating from 40 A at 25°C using the 0.4 W/°C derating factor applied to the 60 W total dissipation limit.

Does STD50N03L-1 have avalanche capability, and how is it rated?

Yes, STD50N03L-1 is 100% tested for single-pulse avalanche energy, rated at 230 mJ with starting T_j = 25°C, I_D = 20 A, and V_DD = 15 V (Table 1, E_AS). This rating validates robustness in unclamped inductive switching events common in buck and flyback topologies.

Can STD50N03L-1 be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage is specified from 1 V (min) to 2.5 V (max), and it delivers usable R_DS(on) (12 mΩ) at V_GS = 5 V. At 3.3 V, it achieves partial enhancement; for full enhancement and minimal R_DS(on), a gate driver or level shifter is recommended for high-efficiency operation.

What is the thermal resistance from junction to case, and how should it be used in layout?

R_thJ-Case is 2.5 °C/W (max), measured from junction to the exposed drain tab. In PCB layout, this requires direct thermal connection of the tab to ≥200 mm² of 2-oz copper pour with ≥4 thermal vias (0.3 mm diameter) to internal ground planes to achieve the rated thermal performance.

STD50N03L-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1434 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD50N03L-1 FAQ

1.How can I place an order for STD50N03L-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD50N03L-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD50N03L-1 reliable?

The price and inventory of STD50N03L-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD50N03L-1 is usually 5 days.

3.What payment methods are accepted for STD50N03L-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD50N03L-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD50N03L-1?

STD50N03L-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD50N03L-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD50N03L-1?

For technical support, including STD50N03L-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD50N03L-1 requirements.

6.How does Aetrix verify that STD50N03L-1 is sourced from the original manufacturer or authorized distributors?

All STD50N03L-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD50N03L-1 meets industry standards.

7.What is the process for return or replacement of STD50N03L-1?

All STD50N03L-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD50N03L-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD50N03L-1 part is unused and in its original packaging.

Return procedure for STD50N03L-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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