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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD60NH03LT4

Name: STD60NH03LT4
Brand: STMicroelectronics
SKU: STD60NH03LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD60NH03LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD60NH03LT4.pdf

Description:: MOSFET N-CH 30V 60A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,820

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Product details

Overview

STD60NH03LT4 from STMicroelectronics is an N-channel 30V, 60A DPAK Power MOSFET with R_DS(on) = 0.0075 Ω at V_GS = 10 V and Q_g = 15.7 nC, optimized for high-efficiency synchronous buck converters in DC-DC power supplies.

For engineers reviewing the STD60NH03LT4 datasheet, STD60NH03LT4 pinout, STD60NH03LT4 application, or STD60NH03LT4 equivalent, this device is selected for low-conduction-loss, low-gate-charge switching in high-current, medium-voltage power stages where thermal performance and third-quadrant diode recovery are critical.

Technical Context

This STripFET™ III MOSFET features a low R_DS(on) × Q_g product (0.0075 Ω × 15.7 nC), enabling reduced conduction and switching losses simultaneously. Its 30 V V_DS rating and 240 A pulsed drain current support robust operation in 12–24 V input DC-DC topologies.

The device exhibits 3.4 nC Q_gd, 51 nC Q_rr, and 32 ns t_rr - parameters directly tied to cross-conduction mitigation and body-diode recovery loss in synchronous rectification. Its R_th(j-case) = 2.14 °C/W enables high-power density mounting on PCBs with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12–24 V bus applications with margin against transients
R_DS(on)	0.0075 Ω @ V_GS = 10 V - Enables ≤2.7 W conduction loss at 60 A continuous drain current
I_D (cont)	60 A @ T_C = 25°C - Supports high-current power stages without parallel devices in compact layouts
Q_g	15.7 nC @ V_GS = 5 V - Low gate charge reduces driver power and enables fast 21 ns t_d(on) switching
E_AS	300 mJ - Single-pulse avalanche energy rating ensures ruggedness during unclamped inductive turn-off
t_rr	32 ns - Fast reverse recovery minimizes shoot-through risk and diode recovery loss in synchronous buck
R_th(j-case)	2.14 °C/W - Enables direct heatsink mounting for thermal management in high-power-density designs

Pinout & Package

DPAK (TO-252) package: surface-mount, single-die, three-terminal power package with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 0–10 V logic-level drive; threshold V_GS(th) = 1 V enables compatibility with 3.3 V/5 V controllers
2 (Source)	Reference node for gate drive and current return path	Low-inductance source connection critical for minimizing ringing and ensuring stable gate control
3 (Drain)	Main power output terminal	Exposed copper pad (Pin 3) serves as primary thermal path and high-current drain connection

Key Features

Feature	Design Value
STripFET™ III process	Enables industry-leading R_DS(on) × Q_g ratio for simultaneous conduction and switching loss reduction
Low Q_rr (51 nC)	Reduces turn-on loss in high-side switch during synchronous rectification, improving overall converter efficiency
Third-quadrant gate charge Q_gls = 15 nC	Optimized for reverse conduction mode in synchronous buck low-side operation with controlled body-diode commutation
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect meets JEDEC JESD97; supports automated reflow assembly without Pb contamination risk

Applications

Server VRM

Industrial DC-DC Converter

Use Scenario: 12 V input to 1.2 V/100 A output point-of-load regulation in dual-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase, conducting during bottom-switch conduction interval.

Use Value: 0.0075 Ω R_DS(on) limits conduction loss to <2.7 W at full load; 32 ns t_rr prevents overlap-induced shoot-through.

Use Scenario: 24 V to 5 V/30 A isolated DC-DC module for programmable logic controller (PLC) I/O power rails.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp topology, replacing Schottky diodes.

Use Value: 300 mJ E_AS withstands transient overloads; 2.14 °C/W R_th(j-case) allows direct heatsink attachment in space-constrained enclosures.

Automotive ADAS Power Supply

Telecom Base Station PSU

Use Scenario: 12 V battery-fed 3.3 V/20 A power rail for radar sensor SoC in automotive ADAS domain controller.

IC Role / Device Role / Timing Role: High-current low-side switch in non-isolated buck stage, operating at 500 kHz switching frequency.

Use Value: 15.7 nC Q_g enables efficient gate driving with low-power controllers; 60 A I_D supports peak current surges during sensor burst mode.

Use Scenario: 48 V to 12 V intermediate bus converter in telecom base station power shelf with forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology, handling 60 A RMS current.

Use Value: 0.009 Ω R_DS(on) @ V_GS = 5 V ensures low loss at partial load; 240 A I_DM supports short-circuit fault tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6644TRPBF	R_DS(on) = 0.0055 Ω @ 10 V but Q_g = 22.5 nC; higher gate charge increases driver loss	Designed for 1 MHz+ GaN-compatible gate drivers; less tolerant of slow-edge controllers	Prefer when ultra-low R_DS(on) dominates over gate drive loss in high-frequency designs
AOB414L	R_DS(on) = 0.0085 Ω @ 10 V; Q_g = 13.5 nC; TO-263 package with higher R_th(j-case) = 2.5 °C/W	Requires larger PCB footprint and more thermal relief; lower avalanche rating (E_AS = 180 mJ)	Choose when board layout permits TO-263 and lower cost outweighs thermal margin trade-off

Compared with IRF6644TRPBF and AOB414L, STD60NH03LT4 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in DPAK - making it preferred for thermally constrained, medium-frequency (<1 MHz) industrial and telecom DC-DC converters requiring reliability over peak efficiency.

Availability

STD60NH03LT4 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.

Supply support for STD60NH03LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STD60NH03LT4 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

Is STD60NH03LT4 suitable for 5 V gate drive?

Yes. With V_GS(th) = 1 V (min) and R_DS(on) = 0.009 Ω at V_GS = 5 V, it fully enhances using standard 5 V logic-level drivers. Its low threshold ensures reliable turn-on even with gate drive droop under load.

What is the maximum safe operating temperature for continuous operation?

The maximum junction temperature is 175°C, and continuous operation at T_J = 150°C is supported when mounted on a PCB with R_th(j-pcb) ≤ 43 °C/W. At T_C = 100°C, rated I_D drops to 43 A per datasheet derating.

Does STD60NH03LT4 include integrated ESD protection?

No. It lacks on-chip ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is required in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can STD60NH03LT4 replace STD60NH03L-1 in existing designs?

Yes - both share identical electrical specs and DPAK footprint. STD60NH03LT4 is the tape-and-reel version of STD60NH03L (not the IPAK STD60NH03L-1), and pinout, thermal, and switching characteristics are functionally identical.

STD60NH03LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD60NH03LT4 FAQ

1.How can I place an order for STD60NH03LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD60NH03LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD60NH03LT4 reliable?

The price and inventory of STD60NH03LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD60NH03LT4 is usually 5 days.

3.What payment methods are accepted for STD60NH03LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD60NH03LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD60NH03LT4?

STD60NH03LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD60NH03LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD60NH03LT4?

For technical support, including STD60NH03LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD60NH03LT4 requirements.

6.How does Aetrix verify that STD60NH03LT4 is sourced from the original manufacturer or authorized distributors?

All STD60NH03LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD60NH03LT4 meets industry standards.

7.What is the process for return or replacement of STD60NH03LT4?

All STD60NH03LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD60NH03LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD60NH03LT4 part is unused and in its original packaging.

Return procedure for STD60NH03LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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