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STMicroelectronics STD6N60DM2

Name: STD6N60DM2
Brand: STMicroelectronics
SKU: STD6N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD6N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD6N60DM2.pdf

Description:: MOSFET N-CH 600V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD6N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM2 series, featuring 600 V V_DS, 0.95 Ω typ. R_DS(on), 5 A continuous drain current, fast-recovery body diode (t_rr = 60 ns at T_j = 25 °C), and 100% avalanche tested. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STD6N60DM2 datasheet, STD6N60DM2 pinout, STD6N60DM2 application, or STD6N60DM2 equivalent, key selection criteria include its low Q_rr (135 nC), ultra-low gate charge (Q_g = 6.2 nC), high dv/dt ruggedness (50 V/ns), and DPAK thermal performance (R_thj-case = 2.08 °C/W).

Technical Context

This device implements ST's MDmesh™ DM2 silicon architecture optimized for hard-switching and resonant topologies. Its fast-recovery body diode achieves t_rr = 60 ns and Q_rr = 135 nC at 25 °C, with trr rising to 132 ns at 150 °C - enabling reduced switching losses in synchronous rectification and half-bridge configurations.

The MOSFET delivers R_DS(on) = 0.95 Ω (typ.) at V_GS = 10 V and ID = 2.5 A, supported by low input capacitance (C_iss = 274 pF) and minimal reverse transfer capacitance (C_rss = 2 pF), ensuring stable gate drive and high noise immunity in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V AC-input SMPS and industrial DC-link applications up to 480 V bus voltage.
R_DS(on) max	1.10 Ω - ensures ≤ 27.5 W conduction loss at 5 A, compatible with thermally constrained DPAK PCB layouts.
Q_g	6.2 nC - enables efficient 100–500 kHz operation with standard gate drivers (e.g., STGAP2SICSN) without excessive drive power.
t_rr	60 ns (T_j = 25 °C) - minimizes dead-time losses and voltage overshoot in bridge legs, critical for ZVS implementation.
dv/dt ruggedness	50 V/ns - withstands rapid voltage transients during hard commutation, eliminating need for snubbers in well-designed layouts.
E_AS	132 mJ - provides robust unclamped inductive switching margin, supporting reliable operation under overload or fault conditions.
R_thj-case	2.08 °C/W - allows 60 W dissipation with ≤125 °C case temperature rise, validated on standard 1-in² 2 oz copper FR-4.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-tab configuration with exposed drain pad for thermal and electrical connection. Tab is electrically connected to Drain (D). Standard footprint per Figure 21 (DS12202 Rev 2, p.14).

Pin/Terminal	Circuit Role	Design Meaning
Tab (D)	Drain	Primary high-side power path; requires direct thermal pad connection to PCB copper pour for heat dissipation.
Pin 1 (G)	Gate	High-impedance control terminal; low C_iss (274 pF) and C_rss (2 pF) reduce Miller effect and improve switching stability.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 60 ns / Q_rr = 135 nC enables zero-voltage switching in phase-shift full-bridge converters without external diodes.
Extremely low gate charge	Q_g = 6.2 nC reduces gate driver power loss and simplifies drive circuit design for >300 kHz operation.
100% avalanche tested	Each unit passes repetitive/unrepetitive avalanche stress (I_AR = 1.7 A, E_AS = 132 mJ), ensuring field reliability in inductive load switching.
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection prevents ESD-induced failure during handling and assembly.
High dv/dt ruggedness	50 V/ns rating eliminates false turn-on risk in high-speed half-bridge operation with fast-rising V_DS edges.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 750 W BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switching element with synchronous body diode conduction during freewheeling.

Use Value: Low Q_rr (135 nC) cuts diode recovery loss by >40% vs. standard 600 V MOSFETs, improving efficiency at 20 kHz PWM.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U server power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with ZVS capability enabled by fast body diode.

Use Value: 60 ns t_rr and 2.7 nC Q_gd minimize voltage spike and timing uncertainty during zero-crossing transitions.

Solar Microinverter H-Bridge

EV Onboard Charger PFC Stage

Use Scenario: Full-bridge inverter in 300–600 W microinverters interfacing with 60-cell PV panels.

IC Role / Device Role / Timing Role: Bidirectional switching device handling both AC line polarity reversals and MPPT modulation.

Use Value: 50 V/ns dv/dt rating ensures immunity to voltage transients during grid synchronization and anti-islanding detection cycles.

Use Scenario: Boost switch in 3.3 kW two-phase interleaved PFC stage of EV onboard chargers.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching element subjected to repetitive 100 A peak currents and 400 V DC bus.

Use Value: 132 mJ E_AS withstands worst-case inductive energy dump during soft-start and overvoltage events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N60DM2	TO-220 package, identical die and electrical specs; R_thj-case = 1.5 °C/W vs. 2.08 °C/W for DPAK.	Requires heatsink mounting; unsuitable for space-constrained SMT-only designs.	Select when higher power derating (>60 W) or forced-air cooling is available.
IPP60R190C7	650 V, 0.19 Ω R_DS(on), CoolMOS™ C7; Q_g = 19 nC, t_rr = 120 ns - higher conduction efficiency but slower diode recovery.	Better for <100 kHz hard-switched PFC; less suitable for ZVS or high-frequency bridge topologies.	Prefer for cost-sensitive 50–100 kHz boost PFC where diode speed is secondary to R_DS(on).

Compared with STP6N60DM2, STD6N60DM2 trades 0.52 °C/W higher thermal resistance for SMT manufacturability and board-level integration; versus IPP60R190C7, it delivers 50% lower Q_rr and 2× faster t_rr at the expense of 2× higher R_DS(on), making it superior for resonant and high-frequency bridge use cases.

Availability

STD6N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU primary switching, solar microinverter H-bridges, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for STD6N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to the MDmesh™ DM2 high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converters demanding low Q_rr and rugged dv/dt performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD6N60DM2 supports 3.2 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12202 Rev 2. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does the body diode require external snubbing in a half-bridge configuration?

No external snubber is required due to the device's 50 V/ns dv/dt ruggedness and fast-recovery diode (t_rr = 60 ns). Layout best practices-such as minimizing source inductance and using Kelvin-source connections-sufficiently suppress voltage overshoot during diode commutation.

Is the gate protected against ESD damage during PCB assembly?

Yes - the STD6N60DM2 integrates Zener clamping between gate and source, rated for ±25 V V_GS. This protection meets HBM Class 2 (≥2 kV) requirements and prevents gate oxide rupture during standard SMT reflow and handling.

Can this MOSFET replace older STD6N60D in existing designs?

Yes - STD6N60DM2 is a direct drop-in replacement for STD6N60D with identical pinout, package, and voltage rating, but offers improved Q_rr (135 nC vs. 220 nC), lower R_DS(on) (0.95 Ω vs. 1.2 Ω), and enhanced dv/dt ruggedness (50 V/ns vs. 35 V/ns), yielding measurable efficiency gains in high-frequency topologies.

STD6N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.2 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 274 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD6N60DM2 FAQ

1.How can I place an order for STD6N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD6N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD6N60DM2 reliable?

The price and inventory of STD6N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD6N60DM2 is usually 5 days.

3.What payment methods are accepted for STD6N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD6N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD6N60DM2?

STD6N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD6N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD6N60DM2?

For technical support, including STD6N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD6N60DM2 requirements.

6.How does Aetrix verify that STD6N60DM2 is sourced from the original manufacturer or authorized distributors?

All STD6N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD6N60DM2 meets industry standards.

7.What is the process for return or replacement of STD6N60DM2?

All STD6N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD6N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD6N60DM2 part is unused and in its original packaging.

Return procedure for STD6N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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