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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD6NM60N

Name: STD6NM60N
Brand: STMicroelectronics
SKU: STD6NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD6NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD6NM60N.pdf

Description:: MOSFET N-CH 600V 4.6A DPAK

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Product details

Overview

STD6NM60N from STMicroelectronics is an N-channel 600 V, 0.85 Ω (typ), 4.6 A MDmesh™ II Power MOSFET in DPAK package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (13 nC), low input capacitance (420 pF), and fast switching (td(on) = 10 ns, tf = 9 ns), enabling use in SMPS, PFC stages, and offline adapters.

For engineers reviewing the STD6NM60N datasheet, STD6NM60N pinout, STD6NM60N application, or STD6NM60N equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching capability (E_AS = 65 mJ), diode reverse recovery performance (t_rr = 300 ns @ T_j = 25°C), and thermal resistance (R_thj-amb = 62.5 °C/W in DPAK).

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout, delivering industry-leading conduction-loss-to-switching-loss trade-off for 600 V class MOSFETs. Its low Q_g/Q_gd ratio (13 nC / 7 nC) supports clean turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.

The integrated source-drain diode exhibits controlled reverse recovery (Q_rr = 2 µC, I_RRM = 12 A) and is rated for pulsed source-drain current up to 18.4 A, supporting synchronous rectification and bidirectional energy transfer in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-derived DC bus voltages (e.g., 400 V DC after bridge rectification + 50% margin) without breakdown.
R_DS(on) max	0.92 Ω @ V_GS = 10 V, I_D = 2.3 A - Ensures <1 W conduction loss at 4.6 A continuous drain current in thermally constrained DPAK layouts.
Q_g	13 nC - Enables efficient gate drive with standard 1–2 A peak drivers; reduces driver power dissipation and layout complexity.
C_iss	420 pF @ V_DS = 50 V - Low input capacitance minimizes switching losses and improves EMI behavior in high-frequency operation (>100 kHz).
E_AS	65 mJ - Confirmed single-pulse avalanche energy rating allows safe operation under transient overvoltage or inductive load dump conditions.
t_r/t_f	8 ns / 9 ns @ V_DD = 300 V, I_D = 2.3 A, R_G = 4.7 Ω - Fast edge rates support high-frequency PWM while maintaining controllable dV/dt (<40 V/ns typical).
R_thj-amb	62.5 °C/W - Defines maximum junction temperature rise above ambient in PCB-mounted DPAK configuration without heatsink.

Pinout & Package

STD6NM60N is supplied in DPAK (TO-252) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad on the bottom provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	High-impedance input requiring ~13 nC total charge; sensitive to ESD; must be driven with low-inductance path to minimize ringing.
2 (Drain)	High-voltage power output	Connected to main DC bus or transformer primary; electrically tied to exposed metal pad for thermal conduction and low-inductance return path.
3 (Source)	Power reference and return	Common node for gate drive return and current sensing; low-inductance connection critical for stable switching and accurate current monitoring.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by >30% vs. first-gen 600 V MOSFETs, enabling higher efficiency at 100–300 kHz.
100% avalanche tested	Guarantees robustness against unclamped inductive switching events without derating, simplifying protection circuit design.
Low C_oss eq. (70 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in flyback and LLC converters.
Optimized body diode	Q_rr = 2 µC and t_rr = 300 ns enable reliable operation in quasi-resonant and synchronous rectifier configurations.
ECOPACK® compliant	Meets RoHS and halogen-free requirements; suitable for industrial and consumer equipment with environmental compliance mandates.

Applications

AC-DC Adapter

Server PSU Primary Switch

Use Scenario: 65 W universal-input offline adapter with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Main switch in PFC boost stage handling 400 V DC bus and 1.2 A average current.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >92% efficiency at full load without forced air cooling.

Use Scenario: 80 PLUS Titanium server power supply front-end with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: High-side switch in each PFC phase, operating at 100 kHz with 4.6 A peak current.

Use Value: Avalanche rating and low C_iss ensure reliability during line transients and reduce EMI filter size by 25% vs. legacy 600 V MOSFETs.

Industrial Motor Drive Inverter

LED Streetlight Driver

Use Scenario: 1 kW three-phase inverter for HVAC compressor control using 600 V DC link.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 2-level inverter leg, switched at 8–16 kHz.

Use Value: Fast t_f and low Q_gd suppress shoot-through risk; R_thj-amb = 62.5 °C/W enables direct PCB mounting without heatsink in compact enclosures.

Use Scenario: 150 W constant-current LED driver for outdoor street lighting with surge immunity.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology handling 500 V surge clamping and 350 mA output current.

Use Value: 65 mJ E_AS withstands 4 kV/2 Ω line surge per IEC 61000-4-5; low V_SD = 1.3 V reduces diode conduction loss during demagnetization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NM60N	Same die, TO-220 through-hole package; R_thj-case = 2.78 °C/W vs. 5 °C/W for DPAK; higher ID_cont = 4.6 A @ T_C = 25°C (not ambient-limited).	Preferred where mechanical robustness, heatsink mounting, or manual assembly required; unsuitable for dense SMT layouts.	Select when thermal interface to external heatsink is available and board space permits larger footprint.
FDPF18N50FT	500 V rating, 0.32 Ω R_DS(on), 18 A ID; lower voltage headroom but superior conduction loss at <300 V bus.	Not suitable for universal AC input or 400 V DC bus; limited to low-line or DC-fed systems.	Choose only for fixed 24–300 V DC input applications where lower R_DS(on) outweighs reduced voltage safety margin.

Compared with STP6NM60N, STD6NM60N trades thermal performance for SMT compatibility and smaller footprint; versus FDPF18N50FT, it provides essential 600 V rating for mains-connected designs but with higher conduction loss-making it optimal for universal-input, space-constrained, and thermally managed DPAK applications.

Availability

STD6NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, server PSUs, industrial motor drives, and LED streetlight drivers requiring stable component supply across long production lifecycles.

Supply support for STD6NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STD6NM60N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial power conversion where low R_DS(on) × Q_g is critical.

FAQ

What is the maximum continuous drain current for STD6NM60N at 100°C case temperature?

The maximum continuous drain current is 2.9 A at T_C = 100°C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be used with PCB copper area and airflow data to determine actual system current capability.

Does STD6NM60N have an integrated gate resistor or require external gate driving components?

No, STD6NM60N has no internal gate resistor. An external gate resistor (typically 4.7–22 Ω) is required to control switching speed, suppress oscillation, and limit peak gate current. The 6 Ω gate input resistance cited in Table 5 is a small-signal AC parameter-not a built-in series resistor-and does not replace discrete gate drive design.

Can STD6NM60N be used in synchronous rectification configurations?

Yes-the device's source-drain diode is characterized for reverse recovery (t_rr = 300 ns, Q_rr = 2 µC) and rated for 4.6 A continuous and 18.4 A pulsed source-drain current. However, its V_SD = 1.3 V forward drop is higher than dedicated SR MOSFETs, so it is best suited for low-duty-cycle or auxiliary synchronous rectification rather than main output paths.

Is STD6NM60N qualified for automotive applications?

No-STD6NM60N is not automotive-grade (AEC-Q101 qualified) and carries no automotive qualification markings. ST's datasheet explicitly states that non-automotive-grade products are intended for industrial and consumer use only, and their use in automotive systems is at the user's own risk and requires full system-level validation.

STD6NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 920mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD6NM60N FAQ

1.How can I place an order for STD6NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD6NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD6NM60N reliable?

The price and inventory of STD6NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD6NM60N is usually 5 days.

3.What payment methods are accepted for STD6NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD6NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD6NM60N?

STD6NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD6NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD6NM60N?

For technical support, including STD6NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD6NM60N requirements.

6.How does Aetrix verify that STD6NM60N is sourced from the original manufacturer or authorized distributors?

All STD6NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD6NM60N meets industry standards.

7.What is the process for return or replacement of STD6NM60N?

All STD6NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STD6NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD6NM60N part is unused and in its original packaging.

Return procedure for STD6NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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