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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD70NH02LT4

Name: STD70NH02LT4
Brand: STMicroelectronics
SKU: STD70NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD70NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD70NH02LT4.pdf

Description:: MOSFET N-CH 24V 60A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD70NH02LT4 from STMicroelectronics is an N-channel 24 V, 60 A, 6.2 mΩ DPAK Power MOSFET based on STripFET™ II technology, optimized for low-conduction and low-switching-loss operation in synchronous buck converters. It features 17 nC total gate charge, 2.14 °C/W junction-to-case thermal resistance, and 360 mJ single-pulse avalanche energy - enabling high-efficiency DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the STD70NH02LT4 datasheet, STD70NH02LT4 pinout, STD70NH02LT4 application, or STD70NH02LT4 equivalent, key selection criteria include R_DS(on) at V_GS = 5 V (8 mΩ), Q_g/Q_gd ratio (17 nC / 3.5 nC), safe operating area up to 240 A pulsed, and DPAK package thermal performance under forced-air cooling.

Technical Context

This MOSFET is engineered as a low-side switch in synchronous buck topologies, where its ultra-low R_DS(on) minimizes conduction loss and its low Q_rr (35 µC) and fast trr (36 ns) reduce cross-conduction and recovery losses in the high-side FET. Its 1.0–1.8 V gate threshold enables robust drive with 4.5 V logic-level controllers.

The device's C_iss/C_oss/C_rss values (2050 pF / 545 pF / 70 pF at V_DS = 25 V) support stable gate driving and predictable switching behavior, while its 27 S forward transconductance ensures strong current control across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	24 V - Maximum continuous drain-source blocking voltage; rated for 30 V transient spikes with external 4.7 Ω gate resistor.
R_DS(on)	6.2 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1.1 W conduction loss at 60 A DC in low-side position.
Q_g	17 nC @ V_DD = 5 V, I_D = 60 A - Determines gate driver current requirement (~1.7 A peak for 10 ns rise time).
E_AS	360 mJ - Specifies unclamped inductive switching ruggedness; supports reliable operation in hard-switched converters.
R_thj-case	2.14 °C/W - Enables 70 W dissipation at ≤25 °C case temperature; requires ≥25 cm² 2-oz copper pad for full rating.
Q_rr	35 µC @ I_SD = 60 A, di/dt = 100 A/µs - Directly impacts turn-on loss of complementary high-side FET in synchronous rectification.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die power MOSFET with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20 V bias; 1 Ω gate input resistance at 1 MHz enables stable RC damping.
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed metal tab - must be tied to PCB ground plane or low-impedance power rail.
Pin 3 (S)	Source	Reference node for gate drive; connects to power ground or low-side shunt; defines V_GS control loop return path.

Key Features

Feature	Design Value
STripFET™ II process	Enables 6.2 mΩ R_DS(on) in DPAK without trench or superjunction trade-offs - balances cost, size, and efficiency.
Low Q_g/Q_gd ratio	17 nC / 3.5 nC = 4.9 - Reduces Miller-induced switching delay and improves immunity to dv/dt-induced turn-on in high-frequency operation.
Fast body diode recovery	trr = 36 ns, Q_rr = 35 µC - Minimizes reverse recovery loss in synchronous rectifier mode and prevents shoot-through during dead-time transitions.
ECOPACK® compliance	Lead-free second-level interconnect with JEDEC JESD97 marking - meets RoHS and ELV requirements without derating.

Applications

Server VRM Low-Side Switch

Telecom DC-DC Converter

Use Scenario: 12 V input → 1.2 V/120 A output VRM in dual-processor server motherboard.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz with 4.5 V gate drive.

Use Value: 6.2 mΩ R_DS(on) limits conduction loss to 0.89 W at 120 A, reducing thermal load on 2-oz copper heatsink.

Use Scenario: Intermediate bus converter (48 V → 12 V) in 48 V telecom shelf system with 30 A output.

IC Role / Device Role / Timing Role: Secondary-side power switch in non-isolated buck stage with active current sharing.

Use Value: 360 mJ E_AS withstands 48 V × 15 A inductive transients during hot-swap events without failure.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: 24 V BLDC gate driver stage powering 500 W fan or pump in HVAC control unit.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with bootstrap high-side gate drive.

Use Value: 1.0–1.8 V V_GS(th) ensures clean turn-on with 3.3 V microcontroller GPIO, eliminating level-shifter need.

Use Scenario: 12 V → 3.3 V/5 A power supply for radar ECU or camera module in ADAS domain controller.

IC Role / Device Role / Timing Role: Primary switch in compact, high-density point-of-load regulator.

Use Value: DPAK footprint (6.6 mm × 6.4 mm) fits tight layout constraints while delivering 70 W T_C = 25 °C rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 6.0 mΩ @ V_GS = 10 V but higher Q_g = 22 nC; no specified E_AS rating.	Lacks avalanche ruggedness spec - unsuitable for unclamped inductive loads like motor drives.	Prefer STD70NH02LT4 where E_AS > 300 mJ is required for reliability under fault conditions.
STP75NF03L	Higher V_DS = 30 V, R_DS(on) = 5.5 mΩ, but larger TO-220 package and 25 nC Q_g.	Requires through-hole mounting and larger heatsink - incompatible with space-constrained SMT designs.	Choose STD70NH02LT4 when DPAK footprint, lower Q_g, and surface-mount assembly are mandatory.

Compared with IRL3803PbF and STP75NF03L, STD70NH02LT4 delivers optimal balance of DPAK-area efficiency (6.2 mΩ + 17 nC), documented 360 mJ avalanche capability, and ECOPACK® compliance - making it uniquely suited for high-density, high-reliability 24 V synchronous buck converters.

Availability

STD70NH02LT4 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drive half-bridges requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for STD70NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

STD70NH02LT4 belongs to ST's STripFET™ II Power MOSFET product line, developed specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where thermal density and switching loss dominate design constraints.

FAQ

Is STD70NH02LT4 suitable for 5 V gate drive applications?

Yes - its gate threshold voltage is 1.0–1.8 V, and R_DS(on) is specified at V_GS = 5 V (8 mΩ). It fully enhances with 4.5 V logic-level drivers, making it compatible with standard 5 V microcontrollers and PWM controllers without level shifting.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 50 A at T_C = 100 °C. This is derated from the 60 A rating at 25 °C using the 0.47 W/°C thermal derating factor and 2.14 °C/W R_thj-case, confirming safe operation within SOA limits at elevated temperatures.

Does STD70NH02LT4 have integrated ESD protection on the gate?

No - the datasheet does not specify gate ESD protection. External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are recommended per ST application note AN419 to prevent damage from static discharge or overvoltage transients.

Can STD70NH02LT4 replace STD70NH02L-1 in existing IPAK designs?

No - STD70NH02LT4 uses DPAK (TO-252) packaging with different pinout, thermal pad layout, and solder footprint than the IPAK (TO-251) STD70NH02L-1. Mechanical redesign and requalification are required due to distinct thermal and mechanical interfaces.

STD70NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD70NH02LT4 FAQ

1.How can I place an order for STD70NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD70NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD70NH02LT4 reliable?

The price and inventory of STD70NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD70NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD70NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD70NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD70NH02LT4?

STD70NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD70NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD70NH02LT4?

For technical support, including STD70NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD70NH02LT4 requirements.

6.How does Aetrix verify that STD70NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD70NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD70NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD70NH02LT4?

All STD70NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD70NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD70NH02LT4 part is unused and in its original packaging.

Return procedure for STD70NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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