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STMicroelectronics STD7N60DM2

Name: STD7N60DM2
Brand: STMicroelectronics
SKU: STD7N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD7N60DM2.pdf

Description:: MOSFET N-CH 600V 6A DPAK

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Product details

Overview

STD7N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in DPAK (TO-252) package, rated for 600 V V_DS, 0.78 Ω typ. R_DS(on) at V_GS = 10 V, 6 A continuous drain current, and featuring fast-recovery body diode with 69 ns trr and 164 nC Qrr. It is designed for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STD7N60DM2 datasheet, STD7N60DM2 pinout, STD7N60DM2 application, or STD7N60DM2 equivalent, key selection criteria include avalanche ruggedness (160 mJ EAS), dv/dt immunity (50 V/ns), low gate charge (7.5 nC), thermal resistance (2.08 °C/W j-case), and MDmesh™ DM2 series fast-recovery diode integration.

Technical Context

This device belongs to ST's MDmesh™ DM2 series, engineered specifically to minimize reverse recovery charge and time while maintaining ultra-low R_DS(on). Its internal structure integrates a Zener-protected gate and optimized epitaxial layer for high-voltage blocking and fast switching.

The MOSFET delivers 50 V/ns dv/dt ruggedness under defined conditions (V_DS ≤ 480 V) and supports unclamped inductive switching with 1.5 A repetitive avalanche current. Its C_iss = 324 pF and C_oss(eq) = 25 pF enable efficient high-frequency operation in resonant and soft-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin.
R_DS(on) max	0.90 Ω - enables low conduction loss at 6 A, critical for <1% efficiency drop in 100–300 W converters.
Q_g	7.5 nC - reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency designs.
trr / Qrr	69 ns / 164 nC - minimizes diode recovery losses and EMI in hard- and soft-switched bridges.
R_thj-case	2.08 °C/W - permits 60 W dissipation with ≤125 °C case temperature, enabling compact heatsink design.
EAS	160 mJ - ensures robustness against transient overloads without external snubbers in flyback or LLC circuits.

Pinout & Package

STD7N60DM2 is housed in a DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain connected to the large copper tab for low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 0–10 V logic-level signal; low C_iss (324 pF) and R_G (6 Ω) simplify driver sizing.
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and requires PCB copper pour for thermal management.
S	Source (return path)	Common reference for gate drive and current sensing; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 69 ns, Qrr = 164 nC - eliminates need for external anti-parallel SiC/Schottky diodes in synchronous rectification.
Extremely low gate charge	Q_g = 7.5 nC - cuts switching losses by >30% vs comparable 600 V MOSFETs at 100 kHz.
Zener-protected gate	±25 V V_GS rating with integrated protection - prevents gate oxide failure during layout-induced transients.
100% avalanche tested	EAS = 160 mJ - guarantees single-pulse ruggedness across production lot, reducing system-level derating.

Applications

Industrial SMPS

Server PSU

Use Scenario: 300–500 W active-clamp forward or phase-shifted full-bridge converter in factory automation power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch with ZVS capability enabled by fast diode recovery and low C_oss.

Use Value: Enables >94% efficiency at full load and reduces EMI filter size due to clean turn-off waveforms.

Use Scenario: High-density 80 PLUS Titanium server power supply operating at 200–500 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge, leveraging low Q_g and dv/dt ruggedness for reliable burst-mode operation.

Use Value: Reduces gate driver power consumption by 40% and maintains stability under rapid load transients.

EV Onboard Charger

Telecom Rectifier

Use Scenario: 6.6 kW bidirectional OBC PFC + DC/DC stage requiring high-reliability 600 V switching.

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC front-end, where low R_DS(on) and avalanche rating ensure fault tolerance.

Use Value: Supports 15-year field life with no derating at 6 A continuous, validated via 100% production avalanche test.

Use Scenario: 3 kW telecom rectifier module operating in harsh ambient (−40 to +70 °C).

IC Role / Device Role / Timing Role: Primary switch in forward converter with clamp winding, relying on 50 V/ns dv/dt immunity for noise resilience.

Use Value: Eliminates false triggering in noisy base station environments without additional gate filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7N60DM2	TO-220 package, same die; R_thj-case = 1.25 °C/W, higher thermal mass, no surface-mount compatibility.	Preferred for prototyping or low-volume open-frame PSUs where heatsinking is direct-mounted.	Select when mechanical mounting flexibility outweighs PCB space constraints and automated assembly requirements.
FDPF6N60NZ	650 V rating, R_DS(on) = 1.0 Ω max, Q_g = 9.5 nC, no fast-recovery diode (standard body diode only).	Suitable for non-resonant topologies where diode recovery is managed externally or not critical.	Choose only if V_DS margin >650 V is required and trr/Qrr are not design-critical parameters.

Compared with STP7N60DM2 and FDPF6N60NZ, STD7N60DM2 uniquely combines DPAK mountability, industry-leading Qrr/trr, and production-validated avalanche energy-making it optimal for space-constrained, high-frequency, and reliability-critical industrial and telecom power stages.

Availability

STD7N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU, EV onboard charger, and telecom rectifier applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD7N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD7N60DM2 belongs to the MDmesh™ DM2 product line, developed specifically to address efficiency and reliability bottlenecks in high-frequency, high-voltage AC/DC and DC/DC conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD7N60DM2 supports 3.8 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and must be applied in thermal design using R_thj-case = 2.08 °C/W and maximum junction temperature of 150 °C.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is recommended: typical value is 4.7 Ω, as used in the official switching time test circuit (Figure 14). This value balances switching speed, ringing suppression, and gate driver stress. Lower values may cause overshoot; higher values increase switching losses without significant benefit.

Can STD7N60DM2 replace STD7N60M2 in existing designs?

No-STD7N60M2 uses MDmesh™ M2 technology with higher Qrr (≈300 nC) and slower trr (≈120 ns). Replacing it with STD7N60DM2 improves diode recovery but requires revalidation of gate drive timing and EMI filters due to faster switching edges and lower C_oss.

Is the DPAK package lead-free and RoHS compliant?

Yes-STD7N60DM2 is offered in ECOPACK®2-compliant DPAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements. The "ECOPACK®" marking on the device and documentation confirms compliance per ST's published environmental specifications.

STD7N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 324 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD7N60DM2 FAQ

1.How can I place an order for STD7N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7N60DM2 reliable?

The price and inventory of STD7N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7N60DM2 is usually 5 days.

3.What payment methods are accepted for STD7N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7N60DM2?

STD7N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7N60DM2?

For technical support, including STD7N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7N60DM2 requirements.

6.How does Aetrix verify that STD7N60DM2 is sourced from the original manufacturer or authorized distributors?

All STD7N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7N60DM2 meets industry standards.

7.What is the process for return or replacement of STD7N60DM2?

All STD7N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD7N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7N60DM2 part is unused and in its original packaging.

Return procedure for STD7N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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