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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD7NM50N

Name: STD7NM50N
Brand: STMicroelectronics
SKU: STD7NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD7NM50N.pdf

Description:: MOSFET N-CH 500V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD7NM50N from STMicroelectronics is an N-channel 500 V, 5 A, 0.70 Ω (typ) high-voltage Power MOSFET based on second-generation MDmesh™ technology, designed for primary-side switching in offline SMPS, PFC stages, and industrial DC-DC converters. It features 100% avalanche tested ruggedness, low gate charge (12 nC), and enhanced dv/dt immunity (40 V/ns).

For engineers reviewing the STD7NM50N datasheet, STD7NM50N pinout, STD7NM50N application, or STD7NM50N equivalent, this device is selected for high-efficiency, high-reliability flyback and forward converter designs where low conduction loss, fast switching, and robust unclamped inductive switching capability are critical.

Technical Context

This MOSFET employs ST's proprietary second-generation MDmesh™ vertical structure with strip layout, delivering ultra-low R_DS(on) and gate charge while maintaining 500 V blocking capability. Its optimized capacitance profile (C_iss = 400 pF, C_rss = 4 pF) enables high-speed switching with reduced Miller effect and EMI.

The device integrates a fast, soft-recovery body diode (t_rr = 250 ns @ T_j = 25°C, Q_rr = 2 µC) and supports repetitive avalanche energy up to 100 mJ, making it suitable for hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Sustains full mains-derived DC bus voltages in universal-input offline converters.
R_DS(on) (max)	0.78 Ω @ V_GS = 10 V - Enables <5 W conduction loss at 5 A continuous drain current.
Q_g	12 nC - Reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency designs.
t_r/t_f	5 ns / 9 ns - Supports >500 kHz switching in resonant and quasi-resonant topologies with minimal overlap loss.
E_AS	100 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external clamping in many flyback designs.
dv/dt immunity	40 V/ns - Resists false turn-on during high-slew-rate transients in noisy high-voltage environments.
Thermal R_th(j-c)	2.78 °C/W (DPAK) - Enables 45 W dissipation at T_C = 25°C, supporting compact heatsink solutions.

Pinout & Package

STD7NM50N is available in DPAK (TO-252) package, featuring surface-mount compatibility and thermal performance optimized for PCB copper pour heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current; connected to source of internal MOSFET cell array	Primary reference node for gate drive; must be low-inductance connection to minimize ringing and shoot-through risk.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <12 nC charge; sensitive to ESD and noise-requires RC snubber or gate resistor close to package.
3 (Drain)	Main high-voltage power output node	Connected internally to die backside; electrically tied to exposed metal tab-must be isolated from heatsink unless referenced to same potential.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Combines vertical charge-balancing with planar strip layout to achieve industry-leading R_DS(on) × Q_g figure-of-merit (0.70 Ω × 12 nC = 8.4 Ω·nC).
100% UIS-tested avalanche ruggedness	Guarantees operation under unclamped inductive switching stress without derating-critical for flyback transformer reset reliability.
Low C_rss/C_iss ratio (1%)	Minimizes Miller feedback, enabling stable gate control even with high dv/dt across drain-source during turn-off.
Soft-recovery body diode	t_rr = 250 ns with low Q_rr (2 µC) and low I_RRM (13 A)-reduces switching loss and EMI in synchronous rectification and freewheeling paths.
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect with JEDEC JESD97 marking-meets global environmental compliance without thermal or reliability trade-offs.

Applications

AC-DC Adapter

Industrial SMPS

Use Scenario: 65 W universal-input flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each switching cycle.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: 200 W open-frame industrial power supply with active PFC front-end.

IC Role / Device Role / Timing Role: PFC boost switch operating at 65–100 kHz with continuous conduction mode.

Use Value: Avalanche rating and soft diode enable reliable operation under line surges and load transients without additional protection circuitry.

LED Driver

Telecom DC-DC

Use Scenario: Isolated constant-current LED driver for street lighting (300–400 V DC bus).

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback topology regulating LED string current.

Use Value: High dv/dt immunity (40 V/ns) prevents spurious turn-on during transformer leakage spikes, improving system stability.

Use Scenario: Telecom -48 V input, 12 V/10 A isolated DC-DC brick using forward converter topology.

IC Role / Device Role / Timing Role: Primary-side switch handling high peak currents during duty-cycle transitions.

Use Value: 20 A pulsed drain current rating and low thermal resistance support high peak-to-average current ratios without junction overheating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NM50N	Same silicon die, TO-220 through-hole package; R_th(j-c) = 2.78 °C/W (same), but higher R_th(j-a) due to leadframe geometry.	Better suited for prototyping, low-volume industrial controls, or legacy through-hole assembly lines.	Select when mechanical mounting constraints require through-hole or when board-level thermal management relies on heatsink contact via screw mount.
FQP5N50C	500 V, 5 A, R_DS(on) = 1.4 Ω (max); Q_g = 18 nC; no avalanche rating specified; TO-220 package.	Lacks guaranteed avalanche ruggedness and has higher conduction loss-requires larger heatsink or derating in high-stress topologies.	Consider only for cost-sensitive, non-safety-critical applications with conservative voltage margins and low peak current demands.

Compared with STP7NM50N, STD7NM50N offers identical electrical performance in a surface-mount DPAK package for automated assembly and improved thermal coupling to PCB copper; versus FQP5N50C, it delivers superior efficiency, ruggedness, and design margin at modest cost premium.

Availability

STD7NM50N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for STD7NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with over 40 years of industrial-grade reliability.

STD7NM50N belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current for STD7NM50N at 100°C case temperature?

The maximum continuous drain current is 3 A at T_C = 100°C, as specified in Table 1 of the datasheet. This reflects thermal derating due to reduced safe operating area at elevated temperatures, not device failure-designers must ensure heatsink sizing maintains T_C ≤ 100°C for sustained 3 A operation.

Does STD7NM50N have a fully rated avalanche capability, and how is it tested?

Yes-STD7NM50N is 100% tested for unclamped inductive switching (UIS) per JEDEC standard JESD24-1. Each unit undergoes single-pulse avalanche stress at I_AS = 2 A and E_AS = 100 mJ, ensuring guaranteed ruggedness without screening-induced reliability degradation.

Can STD7NM50N be used in place of STP7NM50N in an existing TO-220 footprint design?

No-STD7NM50N uses DPAK (TO-252) package with different pad layout, thermal pad configuration, and lead pitch. Direct replacement requires PCB redesign. However, STD7NM50N-1 in IPAK (TO-251) shares similar outline and may serve as a surface-mount alternative with minor layout adaptation.

What is the typical gate threshold voltage, and how does it vary with temperature?

V_GS(th) is 2–4 V (min/typ/max) at 25°C, with typical value 3 V. As shown in Figure 11, it decreases linearly with junction temperature at ~−3 mV/°C, ensuring stable turn-on behavior across −55°C to 150°C operating range without unintended conduction at high T_j.

STD7NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 780mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD7NM50N FAQ

1.How can I place an order for STD7NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7NM50N reliable?

The price and inventory of STD7NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7NM50N is usually 5 days.

3.What payment methods are accepted for STD7NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7NM50N?

STD7NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7NM50N?

For technical support, including STD7NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7NM50N requirements.

6.How does Aetrix verify that STD7NM50N is sourced from the original manufacturer or authorized distributors?

All STD7NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7NM50N meets industry standards.

7.What is the process for return or replacement of STD7NM50N?

All STD7NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD7NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7NM50N part is unused and in its original packaging.

Return procedure for STD7NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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