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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD7NM50N-1

Name: STD7NM50N-1
Brand: STMicroelectronics
SKU: STD7NM50N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD7NM50N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD7NM50N-1.pdf

Description:: MOSFET N-CH 500V 5A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,376

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Product details

Overview

STD7NM50N-1 from STMicroelectronics is an N-channel 500 V, 5 A, 0.70 Ω (typ) high-voltage Power MOSFET in IPAK package, featuring second-generation MDmesh™ technology for ultra-low R_DS(on) and gate charge. It is avalanche-rated, optimized for high-efficiency offline SMPS, PFC stages, and industrial motor drives requiring robust 500 V switching with low conduction loss.

For engineers reviewing the STD7NM50N-1 datasheet, STD7NM50N-1 pinout, STD7NM50N-1 application, or STD7NM50N-1 equivalent, this page delivers verified electrical specs, thermal data, real-world switching performance (t_d(on) = 7 ns, Q_g = 12 nC), diode recovery behavior (t_rr = 250 ns @ 25°C), and IPAK mechanical dimensions - all critical for flyback, LLC, and hard-switched converter design.

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both R_DS(on) and input capacitance (C_iss = 400 pF). Its 500 V V_DSS rating and 100% avalanche-tested construction enable reliable operation in unclamped inductive switching environments up to 5 A continuous drain current at T_C = 25°C.

The integrated source-drain diode exhibits fast reverse recovery (t_rr = 250 ns, Q_rr = 2 µC @ 25°C) and low forward voltage (V_SD = 1.3 V @ I_SD = 5 A), supporting synchronous rectification and freewheeling in high-frequency topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands peak line voltages up to 380 V AC mains after bridge rectification with safety margin.
R_DS(on) (max)	0.78 Ω @ V_GS = 10 V - Enables <1.95 W conduction loss at 5 A, reducing heatsink requirements in compact converters.
Q_g	12 nC - Low gate charge allows efficient driving with standard 1 A gate drivers at >100 kHz switching frequencies.
t_r/t_f	5 ns / 9 ns - Fast edge rates support high-frequency operation while minimizing overlap loss in hard-switched topologies.
R_thj-case	6.25 °C/W - Thermal resistance enables 20 W power dissipation in IPAK package with modest heatsinking (e.g., 25 cm² copper area).
E_AS	100 mJ - Single-pulse avalanche energy rating ensures ruggedness against transient overvoltage during turn-off in inductive loads.
I_SD	5 A continuous - Integrated body diode supports bidirectional current flow in half-bridge and synchronous buck applications.

Pinout & Package

STD7NM50N-1 uses the IPAK (TO-251) package - a surface-mount variant of TO-220 with isolated mounting tab, suitable for automated assembly and moderate-power board-level designs. The package features ECOPACK® lead-free finish and JEDEC-compliant marking (D7NM50N).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power path collector	Internally connected to metal tab; requires isolation from PCB ground plane unless used as heatsink return.
2 (Gate)	Control input	High-impedance MOS gate; requires low-inductance routing and RC snubbing for EMI control in fast-switching layouts.
3 (Source)	Reference node for gate drive and current sensing	Serves as common return for load current and gate driver supply; must be routed with minimal impedance to avoid shoot-through risk.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Reduces R_DS(on) × Q_g figure-of-merit by ~30% vs. first-gen, enabling higher efficiency in 65–300 kHz SMPS.
100% avalanche tested	Guarantees single-pulse ruggedness up to 100 mJ without derating - eliminates need for external clamping in cost-sensitive PFC designs.
Low C_iss (400 pF) & C_oss (35 pF)	Minimizes capacitive switching loss and improves light-load efficiency in resonant converters.
Fast body diode (t_rr = 250 ns)	Enables use in quasi-resonant flyback and LLC converters without external Schottky replacement in sub-100 W designs.
ECOPACK® RoHS-compliant packaging	Meets JEDEC JESD97 marking standards and supports lead-free reflow profiles (peak 260°C).

Applications

Industrial AC-DC Adapters

LED Driver Power Stages

Use Scenario: 30–60 W offline flyback converter powering industrial HMIs and sensors from 85–265 V AC mains.

IC Role / Device Role / Timing Role: Primary-side switch operating at 65 kHz with DCM/QR control; handles full primary current and withstands reflected output voltage spikes.

Use Value: 0.70 Ω R_DS(on) limits conduction loss to <2 W at full load, enabling thermally constrained PCB-only cooling.

Use Scenario: Constant-current buck-boost LED driver for street lighting, accepting 100–305 V DC input from rectified AC or PV sources.

IC Role / Device Role / Timing Role: High-side switch in non-isolated topology; commutates at 100–200 kHz with precise current regulation via source-sense resistor.

Use Value: Low Q_g (12 nC) permits direct drive from microcontroller GPIO with minimal gate driver overhead, reducing BOM count.

Server PSU PFC Boost Stage

Appliance Motor Control

Use Scenario: Active boost PFC stage in 250–500 W server power supply, operating in CCM at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching element handling full-line current; subjected to repetitive avalanche stress during zero-crossing transitions.

Use Value: 100 mJ E_AS rating eliminates need for snubber circuits, simplifying layout and improving reliability under brownout conditions.

Use Scenario: Half-bridge inverter driving universal motor in vacuum cleaners or power tools, supplied from rectified 115/230 V AC.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; conducts 5 A RMS with fast PWM (20–50 kHz) for torque control and soft-start.

Use Value: Integrated body diode with 1.3 V V_SD provides low-loss freewheeling, avoiding discrete diode placement and parasitic inductance issues.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NM50N	Same die, TO-220 package; R_thj-case = 2.78 °C/W (vs. 6.25 °C/W for IPAK); higher power handling but through-hole only.	Preferred in high-power (>45 W) open-frame PSUs where heatsink attachment and manual assembly are acceptable.	Select when thermal budget allows larger heatsink and board space permits through-hole mounting.
FDPF18N50FT	ON Semiconductor SuperFET II; 500 V, 0.52 Ω typ R_DS(on), 23 nC Q_g; higher gate charge increases driver loss at >100 kHz.	Better conduction loss but slower switching; suited for lower-frequency (<65 kHz), higher-current PFC where Q_g penalty is acceptable.	Choose when priority is minimizing conduction loss over switching loss, and gate drive capability supports 23 nC.

Compared with STP7NM50N, STD7NM50N-1 trades 2.3× higher thermal resistance for SMT manufacturability and smaller footprint; versus FDPF18N50FT, it offers 48% lower Q_g at the cost of +35% R_DS(on), favoring high-frequency, space-constrained designs.

Availability

STD7NM50N-1 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and appliance motor control requiring stable component supply and long-term obsolescence management.

Supply support for STD7NM50N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD7NM50N-1 belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for STD7NM50N-1 at 100°C case temperature?

The maximum continuous drain current is 3 A at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the IPAK package (R_thj-case = 6.25 °C/W) and ensures junction temperature remains ≤150°C under sustained load.

Does STD7NM50N-1 include an integrated gate protection diode?

No, STD7NM50N-1 does not integrate a gate protection diode. External Zener clamping (e.g., 18 V) between gate and source is recommended to prevent V_GS exceeding ±25 V absolute maximum, especially in noisy industrial environments or during hot-plug events.

Can STD7NM50N-1 be used in synchronous rectification configurations?

Yes - its low V_SD (1.3 V @ 5 A) and fast t_rr (250 ns) make it suitable for low-power synchronous rectification in flyback converters up to ~60 W, provided gate drive timing avoids cross-conduction and accounts for body diode forward drop during dead-time.

What is the safe operating area (SOA) limitation for pulsed drain current?

The pulsed drain current I_DM is rated at 20 A for pulse widths limited by SOA constraints (not just thermal limits). At V_DS = 400 V, the maximum allowable pulse width is ~10 µs per Figure 1, decreasing with increasing V_DS due to secondary breakdown limits.

STD7NM50N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 780mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD7NM50N-1 FAQ

1.How can I place an order for STD7NM50N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD7NM50N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD7NM50N-1 reliable?

The price and inventory of STD7NM50N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD7NM50N-1 is usually 5 days.

3.What payment methods are accepted for STD7NM50N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD7NM50N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD7NM50N-1?

STD7NM50N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD7NM50N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD7NM50N-1?

For technical support, including STD7NM50N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD7NM50N-1 requirements.

6.How does Aetrix verify that STD7NM50N-1 is sourced from the original manufacturer or authorized distributors?

All STD7NM50N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD7NM50N-1 meets industry standards.

7.What is the process for return or replacement of STD7NM50N-1?

All STD7NM50N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD7NM50N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD7NM50N-1 part is unused and in its original packaging.

Return procedure for STD7NM50N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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