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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD8NM60N

Name: STD8NM60N
Brand: STMicroelectronics
SKU: STD8NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD8NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD8NM60N.pdf

Description:: MOSFET N-CH 600V 7A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD8NM60N from STMicroelectronics is an N-channel 600 V, 7 A MDmesh™ II Power MOSFET in DPAK package with R_DS(on) ≤ 0.65 Ω at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency switching converters in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STD8NM60N datasheet, STD8NM60N pinout, STD8NM60N application, or STD8NM60N equivalent, this device offers verified low gate charge (19 nC), fast switching (t_d(off) = 40 ns), robust diode recovery (t_rr = 310 ns @ 25 °C), and thermal resistance of 100 °C/W (junction-to-ambient, DPAK), supporting reliable design-in for medium-power hard-switched topologies.

Technical Context

This MDmesh™ II MOSFET employs a proprietary vertical structure combined with ST's strip layout to minimize both conduction loss (R_DS(on)) and switching loss (Q_g, C_iss). Its 600 V V_DSS rating supports universal-input AC-DC designs up to 400 V DC bus, while its 100% unclamped inductive avalanche capability (E_AS = 200 mJ) enables rugged operation without external snubbers in flyback or resonant converters.

The device features low input capacitance (C_iss = 560 pF), low gate input resistance (R_G = 6 Ω), and tightly controlled gate threshold voltage (V_GS(th) = 2–4 V), ensuring stable turn-on behavior across temperature and compatibility with standard 10 V gate drivers. Its source-drain diode exhibits t_rr = 310 ns and Q_rr = 2.40 µC at 25 °C, enabling efficient synchronous rectification replacement in quasi-resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports 400 V DC bus with ≥50 V margin for surge and ringing in offline power supplies.
R_DS(on) max	0.65 Ω @ V_GS = 10 V - Enables <1.6 W conduction loss at 7 A continuous drain current in DPAK package.
Q_g	19 nC - Reduces gate drive power and allows use of low-cost, low-current gate drivers (e.g., 100 mA peak).
t_d(off)	40 ns @ V_DD = 300 V, I_D = 3.5 A - Supports >200 kHz switching frequency with minimal dead-time overhead.
E_AS	200 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external clamping in many flyback designs.
t_rr	310 ns @ T_j = 25 °C - Limits reverse-recovery losses during hard commutation; increases to 480 ns at 150 °C (design-critical for thermal derating).
R_thj-amb	100 °C/W - Defines maximum power dissipation (≤0.7 W) in free-air DPAK mounting; requires heatsinking for >1 W continuous operation.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, isolated drain tab (pin 2), with standard JEDEC outline and ECOPACK® lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current; tied to PCB ground plane	Low-inductance connection critical for EMI control; shares thermal mass with copper pour for cooling.
2 (Drain)	Main high-voltage power output node; connected to transformer primary or bus rail	Exposed metal tab - electrically active and thermally conductive; must be insulated from heatsink unless referenced to same potential.
3 (Gate)	Control input for MOSFET channel modulation	High-impedance node sensitive to noise; requires local RC snubber (e.g., 10 Ω + 100 pF) near package for dV/dt immunity.

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for 600 V class, reducing total switching+conduction loss by ≥15% vs. first-gen superjunction MOSFETs.
100% unclamped inductive avalanche tested	Guarantees single-pulse ruggedness up to 200 mJ without parameter shift - eliminates qualification testing for flyback/LLC snubberless designs.
Low C_iss / C_oss ratio (560 pF / 37 pF)	Improves voltage-dependent capacitance linearity, enabling predictable ZVS transition timing in resonant converters.
ECOPACK® lead-free packaging	Complies with RoHS and JEDEC JESD97; qualified for reflow soldering up to 260 °C peak, with 300 °C max lead temperature tolerance.

Applications

AC-DC Adapter

Industrial Motor Drive

Use Scenario: 65 W universal-input offline flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side main switch operating at 65–130 kHz with discontinuous conduction mode (DCM).

Use Value: Low Q_g (19 nC) and fast t_d(off) (40 ns) reduce driver loss and enable tight duty-cycle control for constant-voltage regulation under wide load range.

Use Scenario: Three-phase inverter stage for 0.75 kW BLDC motor in HVAC fan module.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in 16 kHz PWM-driven inverter leg.

Use Value: Avalanche ruggedness (E_AS = 200 mJ) absorbs inductive kickback during short-circuit events, improving system fault tolerance without added protection circuitry.

Server PSU PFC

LED Driver

Use Scenario: Boost PFC front-end in 500 W telecom server power supply.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 60–100 kHz.

Use Value: Low R_DS(on) (0.56 Ω typ.) minimizes conduction loss at high RMS current, while low C_oss (37 pF) reduces turn-off loss during zero-voltage switching transitions.

Use Scenario: Buck-based constant-current LED driver for street lighting (48 V output, 1.5 A).

IC Role / Device Role / Timing Role: Synchronous rectifier replacement using source-drain diode in high-side buck configuration.

Use Value: Fast, soft-recovery body diode (t_rr = 310 ns, Q_rr = 2.40 µC) reduces reverse-recovery spikes and EMI compared to discrete Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NM60N	Same die, TO-220 package; R_thj-case = 1.78 °C/W vs. DPAK's 5 °C/W; higher ID_cont = 7 A @ T_C = 25 °C (not ambient)	Requires through-hole PCB layout and mechanical heatsink; unsuitable for compact surface-mount designs	Select when board space permits and thermal budget demands lower junction-to-case resistance.
FDPF18N50FT	500 V rating, R_DS(on) = 0.32 Ω, Q_g = 32 nC - higher conduction efficiency but slower switching and lower voltage margin	Not rated for universal AC input (230 V_AC → ~325 V_DC); insufficient margin for surge/line transients in 600 V designs	Select only for fixed 277 V AC or DC-fed systems where 500 V rating is sufficient and lower R_DS(on) justifies higher Q_g.

Compared with STP8NM60N and FDPF18N50FT, STD8NM60N uniquely balances 600 V ruggedness, DPAK surface-mount compatibility, and low Q_g/R_DS(on) trade-off-making it optimal for space-constrained, universal-input SMPS where thermal management relies on PCB copper rather than bulky heatsinks.

Availability

STD8NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, server PSU PFC stages, and LED drivers requiring stable component supply and long-term production continuity.

Supply support for STD8NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD8NM60N belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for STD8NM60N at 100 °C case temperature?

The maximum continuous drain current is 4.3 A at T_C = 100 °C, as specified in Table 2 (Absolute Maximum Ratings). This reflects thermal derating due to reduced safe operating area at elevated temperatures-not ambient temperature limits-and must be validated against actual PCB thermal performance using R_thj-amb = 100 °C/W.

Does STD8NM60N require a gate resistor for stability in hard-switching applications?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen parasitic oscillation caused by PCB trace inductance interacting with C_iss and Q_g. The device's low gate input resistance (6 Ω) makes it especially susceptible to ringing; layout best practices include minimizing gate loop area and placing the resistor within 2 mm of the gate pin.

Can STD8NM60N replace STB8NM60N in a D²PAK footprint?

No - STD8NM60N uses DPAK (TO-252) package with 2.3 mm pitch and no isolated tab, whereas STB8NM60N uses D²PAK (TO-263) with 2.54 mm pitch and exposed drain tab requiring different pad layout and thermal via strategy. Mechanical and soldering profiles are incompatible without PCB redesign.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode at 150 °C junction temperature?

The typical reverse recovery charge is 3.50 µC at T_j = 150 °C, per Table 8 (Source-drain diode). This represents a 46% increase over the 2.40 µC value at 25 °C, directly impacting turn-off loss and EMI in high-temperature operation - thermal design must account for this degradation in high-power density layouts.

STD8NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD8NM60N FAQ

1.How can I place an order for STD8NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD8NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD8NM60N reliable?

The price and inventory of STD8NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD8NM60N is usually 5 days.

3.What payment methods are accepted for STD8NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD8NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD8NM60N?

STD8NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD8NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD8NM60N?

For technical support, including STD8NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD8NM60N requirements.

6.How does Aetrix verify that STD8NM60N is sourced from the original manufacturer or authorized distributors?

All STD8NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD8NM60N meets industry standards.

7.What is the process for return or replacement of STD8NM60N?

All STD8NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STD8NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD8NM60N part is unused and in its original packaging.

Return procedure for STD8NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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