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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD8NM60N-1

Name: STD8NM60N-1
Brand: STMicroelectronics
SKU: STD8NM60N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD8NM60N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD8NM60N-1.pdf

Description:: MOSFET N-CH 600V 7A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD8NM60N-1 from STMicroelectronics is an N-channel 600 V, 7 A MDmesh™ II Power MOSFET in IPAK (TO-251) package with R_DS(on) ≤ 0.65 Ω at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency AC-DC flyback and PFC converters in industrial power supplies.

For engineers reviewing the STD8NM60N-1 datasheet, STD8NM60N-1 pinout, STD8NM60N-1 application, or STD8NM60N-1 equivalent, key selection criteria include its 600 V V_DS, low 19 nC total gate charge, 560 pF input capacitance, 1.3 V source-drain diode forward voltage, and thermal resistance of 5 °C/W (j-case) - all critical for hard-switched SMPS design.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout, delivering ultra-low R_DS(on) × Q_g figure-of-merit (0.56 Ω × 19 nC). Its 15 V/ns dv/dt ruggedness and 2.5 A repetitive avalanche current support reliable operation under inductive switching stress.

The IPAK package provides 5 °C/W junction-to-case thermal resistance and 100 °C/W junction-to-ambient rating, enabling compact heatsink integration in space-constrained 75–150 W offline converters without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage (≈400 V DC) with 50% margin for surge and ringing in universal-input SMPS.
R_DS(on) max	0.65 Ω @ V_GS = 10 V - Enables <1.6 W conduction loss at 7 A continuous drain current in TO-251 package.
Q_g	19 nC - Reduces gate drive power and enables use of low-power controllers like L6565/L6599 in resonant topologies.
C_iss	560 pF - Low input capacitance minimizes switching losses and improves EMI behavior during turn-on.
E_AS	200 mJ - Supports unclamped inductive switching without external snubber in auxiliary windings or PFC boost stages.
T_j max	150 °C - Allows sustained operation at elevated ambient temperatures in enclosed power adapters and LED drivers.
V_SD	1.3 V @ I_SD = 7 A - Low body diode forward drop reduces reverse recovery losses in quasi-resonant flyback designs.

Pinout & Package

STD8NM60N-1 uses the IPAK (TO-251) package: a 3-lead, surface-mount variant of TO-220 with isolated tab, rated for 2500 V_RMS insulation between leads and heat sink. The molded plastic body supports lead-free reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current; connected to PCB ground plane	Low-inductance source connection essential for minimizing shoot-through risk in half-bridge configurations.
2 (Gate)	Control terminal for MOSFET channel activation	High-impedance input requiring <6 Ω gate resistor to damp ringing; sensitive to ESD (±25 V rating).
3 (Drain)	Main high-side power output node; tied to primary winding or bus rail	Exposed metal tab is electrically connected to Drain - requires insulated mounting or isolation pad on heatsink.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines low R_DS(on) (0.56 Ω typ.) and low Q_g (19 nC) for best-in-class R_DS(on) × Q_g = 10.6 Ω·nC - directly reducing total switching + conduction loss.
100% avalanche tested	Guarantees single-pulse avalanche energy handling up to 200 mJ - eliminates need for external clamping in cost-sensitive flyback snubberless designs.
Low C_oss eq.	153 pF (0–480 V) - reduces capacitive turn-off loss and improves light-load efficiency in QR/DCM operation.
Fast body diode	t_rr = 310 ns @ T_j = 25 °C - limits reverse recovery charge (Q_rr = 2.4 µC), lowering EMI and stress on synchronous rectifiers.

Applications

AC-DC Adapter

Industrial SMPS

Use Scenario: 65 W universal-input adapter with QR flyback topology operating at 65–130 kHz.

IC Role / Device Role: Primary-side high-voltage switch handling 400 V DC bus and 7 A peak current.

Use Value: 0.56 Ω R_DS(on) and 19 nC Q_g enable >89% efficiency at full load while maintaining thermal rise <45 °C on 2-layer PCB.

Use Scenario: 120 W open-frame power supply for PLC I/O modules with active PFC + LLC secondary.

IC Role / Device Role: Boost switch in continuous conduction mode (CCM) PFC stage, switching at 65 kHz.

Use Value: 600 V rating and 2.5 A avalanche current allow safe operation during line surges; 5 °C/W R_th(j-c) supports direct heatsink mounting.

LED Driver

UPS Inverter Stage

Use Scenario: Constant-current 100 W outdoor LED streetlight driver with passive PFC and buck-boost topology.

IC Role / Device Role: Main switching element in high-side buck-boost configuration driving 350 mA string at 300 V output.

Use Value: 1.3 V V_SD and 310 ns t_rr minimize body-diode conduction loss during dead-time, improving thermal margin by 8 °C.

Use Scenario: 1 kVA online UPS with dual-phase inverter bridge feeding 230 V AC output.

IC Role / Device Role: Low-side switch in half-bridge leg, commutating 7 A RMS current at 20 kHz PWM.

Use Value: 100% avalanche rating ensures robustness against shoot-through faults and transformer leakage inductance spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NM60N	Same die, TO-220 package; R_th(j-c) = 1.78 °C/W vs. 5 °C/W for IPAK	Better thermal performance but requires through-hole assembly and larger board area	Select when higher power density (>150 W) and forced-air cooling are available.
FDPF18N50FT	500 V rating, 0.32 Ω R_DS(on), 33 nC Q_g; no avalanche rating specified	Limited to 265 VAC input systems; higher Q_g increases gate drive loss	Only suitable for lower-voltage, cost-driven consumer adapters where 600 V margin is unnecessary.

Compared with STP8NM60N and FDPF18N50FT, STD8NM60N-1 uniquely balances 600 V ruggedness, IPAK surface-mount compatibility, and MDmesh™-optimized loss profile - making it optimal for thermally constrained, universal-input industrial adapters where reliability and manufacturability are co-prioritized.

Availability

STD8NM60N-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverter stages requiring stable component supply across long-lifecycle production programs.

Supply support for STD8NM60N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD8NM60N-1 belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion - emphasizing low R_DS(on) × Q_g, avalanche robustness, and package flexibility.

FAQ

What is the maximum continuous drain current for STD8NM60N-1 at 100 °C case temperature?

The maximum continuous drain current is 4.3 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the IPAK package (R_th(j-c) = 5 °C/W) and ensures junction temperature remains ≤150 °C under steady-state conduction.

Does STD8NM60N-1 have a fully rated avalanche capability?

Yes - it is 100% avalanche tested per datasheet Section 4, with a single-pulse avalanche energy rating of 200 mJ at T_j = 25 °C and repetitive avalanche current of 2.5 A. This allows safe operation during transient overloads without external protection circuitry.

Can STD8NM60N-1 be used in place of STD8NM60N in DPAK footprint designs?

No - STD8NM60N-1 uses IPAK (TO-251) with lead spacing and body dimensions incompatible with DPAK (TO-252). Pin 1–2–3 assignment matches, but mechanical fit, thermal pad layout, and solder stencil requirements differ significantly; redesign is required.

What is the typical gate threshold voltage range for STD8NM60N-1?

V_GS(th) is specified as 2–4 V (min–max) at I_D = 250 µA, with typical value near 3 V. This ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise in high-dv/dt environments.

STD8NM60N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD8NM60N-1 FAQ

1.How can I place an order for STD8NM60N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD8NM60N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD8NM60N-1 reliable?

The price and inventory of STD8NM60N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD8NM60N-1 is usually 5 days.

3.What payment methods are accepted for STD8NM60N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD8NM60N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD8NM60N-1?

STD8NM60N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD8NM60N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD8NM60N-1?

For technical support, including STD8NM60N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD8NM60N-1 requirements.

6.How does Aetrix verify that STD8NM60N-1 is sourced from the original manufacturer or authorized distributors?

All STD8NM60N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD8NM60N-1 meets industry standards.

7.What is the process for return or replacement of STD8NM60N-1?

All STD8NM60N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD8NM60N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD8NM60N-1 part is unused and in its original packaging.

Return procedure for STD8NM60N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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