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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD90N03L-1

Name: STD90N03L-1
Brand: STMicroelectronics
SKU: STD90N03L-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD90N03L-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD90N03L-1.pdf

Description:: MOSFET N-CH 30V 80A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD90N03L-1 from STMicroelectronics is an N-channel 30V, 80A (TC = 25°C), 5.7 mΩ R_DS(on) Power MOSFET in IPAK package, utilizing STripFET™ III technology for high-efficiency DC-DC converters. It delivers low conduction and switching losses, features 22 nC total gate charge, and supports pulsed drain current up to 320 A in synchronous buck low-side configurations.

For engineers reviewing the STD90N03L-1 datasheet, STD90N03L-1 pinout, STD90N03L-1 application, or STD90N03L-1 equivalent, this device is selected for high-current, low-voltage power stages where thermal performance, avalanche ruggedness (350 mJ E_AS), and fast switching (19 ns t_d(on)) are critical design requirements.

Technical Context

This MOSFET is optimized as a low-side switch in synchronous buck converters, with a 1 V gate threshold enabling 5 V logic-level drive compatibility and minimizing shoot-through risk. Its 76 pF Crss and 10 nC Qgs support clean turn-on/turn-off transitions under 4.7 Ω gate resistance.

The device integrates a robust body diode (t_rr = 36 ns, Q_rr = 32 µC) for freewheeling operation, and its 1.58 °C/W R_thj-case enables high-power dissipation in compact heatsinked layouts without derating below 100°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin
R_DS(on)	5.7 mΩ @ V_GS = 10 V - Enables <1.8 W conduction loss at 60 A continuous current
I_D (cont)	80 A @ T_C = 25°C - Supports high-current output stages without parallel devices
Q_g	22 nC - Low gate charge reduces driver power and enables efficient 500 kHz+ switching
E_AS	350 mJ - Avalanche-rated for unclamped inductive load reliability in power supply fault conditions
t_r/t_f	135 ns / 33 ns - Fast edge rates minimize overlap loss in synchronous rectification
R_thj-case	1.58 °C/W - Allows >60 W power dissipation with modest heatsinking at T_C ≤ 100°C

Pinout & Package

STD90N03L-1 uses the TO-251 (IPAK) package: a 3-pin, single-ended, surface-mount variant of the traditional TO-220 outline with isolated tab (drain-connected), optimized for automated assembly and thermal transfer via PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path and gate reference	Low-inductance source connection critical for stable gate drive and current sensing accuracy
2 (Gate)	Control terminal for channel modulation	1 V V_GS(th) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs
3 (Drain)	Main power output node (tab-connected)	Exposed metal tab provides direct thermal path to heatsink or PCB thermal pad

Key Features

Feature	Design Value
STripFET™ III process	Enables 5.7 mΩ R_DS(on) in IPAK, reducing die size and cost vs prior generations
Logic-level gate drive	1 V threshold allows direct interfacing with 3.3 V/5 V digital controllers without level-shifting
Low Q_gd/Q_gs ratio	7 nC / 10 nC = 0.7 - Minimizes Miller-induced turn-on risk during high dv/dt commutation
ECOPACK® compliance	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 marking standards
High E_AS rating	350 mJ single-pulse avalanche energy supports robust operation under load dump or short-circuit events

Applications

Server VRM

Industrial PLC I/O Module

Use Scenario: High-current CPU/GPU voltage regulation delivering up to 120 A per phase in 48 V–12 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 300–600 kHz with precise dead-time control.

Use Value: 5.7 mΩ R_DS(on) and 22 nC Q_g reduce both conduction and gate drive losses, improving full-load efficiency by ≥0.8% over legacy 8 mΩ alternatives.

Use Scenario: 24 V DC power distribution to isolated digital output channels driving solenoids and relays.

IC Role / Device Role / Timing Role: High-current load switch controlling up to 80 A peak per channel with fast turn-off (<33 ns fall time) to suppress inductive kickback.

Use Value: 350 mJ E_AS and 1.3 V V_SD body diode enable safe energy recirculation during rapid de-energization without external snubbers.

Automotive ADAS Camera Power

Telecom Base Station PSU

Use Scenario: Compact 12 V input–3.3 V output point-of-load converter powering image sensors and ISP SoCs in rear-view and surround-view cameras.

IC Role / Device Role / Timing Role: Low-side switch in thermally constrained 10 mm × 10 mm layout, requiring minimal heatsink area.

Use Value: 1.58 °C/W R_thj-case allows 60 W dissipation with only 60°C rise above 85°C ambient-meeting AEC-Q101-referenced thermal targets.

Use Scenario: 48 V–12 V intermediate conversion stage in distributed power architecture for RF amplifiers and FPGAs.

IC Role / Device Role / Timing Role: Primary low-side switch in high-density, forced-air-cooled half-brick modules operating at 250 kHz.

Use Value: 76 pF Crss and 2805 pF Ciss ensure stable gate drive with standard 1 A peak drivers, eliminating need for active gate control circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 6.0 mΩ, Q_g = 27 nC, TO-220 package	Larger footprint and higher gate charge increase board area and driver loss	Prefer when TO-220 mechanical mounting is required and gate drive capability exceeds 1 A
DMT3006LPS-13	R_DS(on) = 5.2 mΩ, Q_g = 20 nC, PowerSO-10 package	Lower R_DS(on) but non-isolated drain tab limits thermal interface flexibility	Choose for highest efficiency in space-constrained designs where PCB thermal vias replace heatsinks

Compared with IRL3803PbF and DMT3006LPS-13, STD90N03L-1 offers optimal balance of IPAK thermal accessibility, 5.7 mΩ conduction loss, and 22 nC gate charge-making it preferred for cost-sensitive, medium-power industrial and telecom DC-DC modules requiring manual or automated heatsink attachment.

Availability

STD90N03L-1 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and automotive ADAS camera power supplies requiring stable component supply across multi-year production cycles.

Supply support for STD90N03L-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STD90N03L-1 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in space- and thermally-constrained applications.

FAQ

Is STD90N03L-1 suitable for 3.3 V microcontroller gate drive?

Yes. With a 1 V gate threshold voltage and guaranteed R_DS(on) of 5.7 mΩ at V_GS = 5 V, STD90N03L-1 fully enhances using standard 3.3 V or 5 V logic outputs. No level shifter is needed, and the low Qgs (10 nC) minimizes driver loading even at high frequencies.

What is the maximum continuous current at 100°C case temperature?

The datasheet specifies 64 A continuous drain current at T_C = 100°C. This reflects thermal derating from the 80 A rating at 25°C, based on the device's 1.58 °C/W junction-to-case thermal resistance and SOA-limited conduction capability.

Does STD90N03L-1 have avalanche capability, and how is it rated?

Yes. STD90N03L-1 is fully rated for single-pulse avalanche with E_AS = 350 mJ at T_j = 25°C, ID = 40 A, and V_DD = 15 V. This rating is validated per JEDEC JESD24-11 and supports reliable operation during inductive switching faults without external clamping.

How does the IPAK package differ from DPAK for thermal management?

IPAK (TO-251) has an exposed drain tab identical to DPAK (TO-252) but uses a single leadframe pin instead of three, resulting in lower parasitic inductance and improved thermal transfer to PCB copper. Its R_thj-case is identical (1.58 °C/W), but the isolated tab simplifies heatsink mounting in high-voltage isolation zones.

STD90N03L-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2805 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 95W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD90N03L-1 FAQ

1.How can I place an order for STD90N03L-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD90N03L-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD90N03L-1 reliable?

The price and inventory of STD90N03L-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD90N03L-1 is usually 5 days.

3.What payment methods are accepted for STD90N03L-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD90N03L-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD90N03L-1?

STD90N03L-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD90N03L-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD90N03L-1?

For technical support, including STD90N03L-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD90N03L-1 requirements.

6.How does Aetrix verify that STD90N03L-1 is sourced from the original manufacturer or authorized distributors?

All STD90N03L-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD90N03L-1 meets industry standards.

7.What is the process for return or replacement of STD90N03L-1?

All STD90N03L-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD90N03L-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD90N03L-1 part is unused and in its original packaging.

Return procedure for STD90N03L-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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