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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD90NH02LT4

Name: STD90NH02LT4
Brand: STMicroelectronics
SKU: STD90NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD90NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD90NH02LT4.pdf

Description:: MOSFET N-CH 24V 60A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,012

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Product details

Overview

STD90NH02LT4 from STMicroelectronics is an N-channel 24 V, 60 A, 5.2 mΩ DPAK Power MOSFET utilizing STripFET™ II technology. It delivers ultra-low R_DS(on) × Q_g, reduced conduction and switching losses, and a low 1.8 V typical gate threshold-optimized for high-efficiency synchronous buck converters in DC-DC power supplies.

For engineers reviewing the STD90NH02LT4 datasheet, STD90NH02LT4 pinout, STD90NH02LT4 application, or STD90NH02LT4 equivalent, key selection criteria include its 5.2 mΩ R_DS(on) at V_GS = 10 V, 47.5 nC total gate charge, 2850 pF input capacitance, 1.58 °C/W junction-to-case thermal resistance, and DPAK package suitability for surface-mount power stage layouts.

Technical Context

This MOSFET is engineered for low-side switching in synchronous buck topologies, where its low Q_gls (44 nC) and low Q_rr (35 nC) minimize cross-conduction risk and recovery losses during high-frequency transitions. Its R_DS(on) remains stable across temperature due to STripFET™ II's optimized cell layout and trench-gate process.

The device supports operation up to T_j = 175 °C with guaranteed avalanche energy (E_AS = 600 mJ), and features a robust 30 V drain-source spike rating when driven with R_g = 4.7 Ω-enabling reliable performance in noisy industrial and telecom power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum continuous drain-source blocking voltage; rated for 30 V transient spikes under defined gate drive conditions.
R_DS(on)	5.2 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1.8 W conduction loss at 60 A, critical for high-current low-voltage output stages.
Q_g	47.5 nC @ V_DD = 10 V, I_D = 60 A - Determines gate driver current requirement and switching transition time in hard-switched applications.
C_iss	2850 pF @ V_DS = 15 V - Impacts high-frequency gate drive loop stability and EMI generation in >500 kHz converters.
T_j max	175 °C - Allows sustained operation in thermally constrained enclosures without derating below full 60 A current capability.
R_thj-case	1.58 °C/W - Enables direct heatsinking to PCB copper or external metal core, supporting >70 W power dissipation with modest thermal interface.
I_D (pulsed)	240 A - Supports short-duration overload conditions such as inrush or fault transients without bond-wire failure.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-die, 3-terminal power package with exposed drain pad for thermal and electrical connection. Standardized JEDEC MO-247 footprint; lead-free, RoHS-compliant ECOPACK® construction.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤±20 V bias; low input capacitance enables fast turn-on with moderate gate driver strength.
2 (Source)	Reference node / return path	Common source connection for low-side switch; ties directly to power ground plane; critical for minimizing switching node ringing.
3 (Drain)	Power output / high-side connection	Connected to input rail (e.g., 12 V/24 V); electrically and thermally tied to exposed copper pad on bottom of package.

Key Features

Feature	Design Value
STripFET™ II trench-gate architecture	Enables simultaneous optimization of R_DS(on), Q_g, and C_oss-unachievable with planar MOSFETs at same voltage class.
Low Q_gls (44 nC)	Reduces third-quadrant gate charge during body-diode conduction, lowering shoot-through risk in synchronous rectification.
Low Q_rr (35 nC) & fast t_rr (35 ns)	Minimizes reverse recovery loss in high-side FET during low-side turn-on, improving overall converter efficiency above 300 kHz.
Guaranteed E_AS = 600 mJ	Supports unclamped inductive switching events without failure-critical for robustness in motor drive or hot-swap circuits.
ECOPACK® lead-free construction	Meets JEDEC JESD97 marking standards and RoHS/REACH requirements; compatible with standard Pb-free reflow profiles.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V intermediate bus conversion in telecom shelf power systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter operating at 300–500 kHz.

Use Value: 5.2 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 8 mΩ devices, enabling higher power density without forced air cooling.

Use Scenario: Core voltage regulation (0.8–1.8 V @ up to 200 A) for CPU/GPU in datacenter servers.

IC Role / Device Role / Timing Role: Bottom-FET in dual-phase interleaved buck stage, driven by integrated controller with adaptive dead-time control.

Use Value: 44 nC Q_gls and 35 nC Q_rr suppress body-diode conduction loss and reduce high-side FET switching stress during light-load discontinuous mode.

Industrial PLC Power Supplies

Automotive Body Control Modules

Use Scenario: 24 V input to 3.3/5/12 V multi-rail supply in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary low-side switch in isolated flyback or non-isolated buck converter powering microcontrollers and I/O drivers.

Use Value: 175 °C T_j max and 1.58 °C/W R_thj-case allow full 60 A rating in sealed enclosures with passive heatsinking only.

Use Scenario: Load switching for interior lighting, window lift, and HVAC actuators in 12 V automotive systems.

IC Role / Device Role / Timing Role: High-current load switch replacing electromechanical relays; controlled via CAN-linked MCU GPIO.

Use Value: 240 A pulsed current rating and 600 mJ avalanche energy ensure survivability during inductive kickback from motor loads without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6644TRPBF	Lower R_DS(on) (4.2 mΩ), but higher Q_g (52 nC) and C_iss (3200 pF); D2PAK package.	Better conduction loss at <40 A; worse high-frequency switching efficiency due to higher capacitance and larger footprint.	Prefer for lower-current, thermally relaxed designs where board space allows D2PAK; avoid in compact 500 kHz+ VRMs.
STL90N2LH5	Same 24 V rating, 5.5 mΩ R_DS(on), but 30 V V_DSS; H2PAK-2 package; Q_g = 42 nC.	Improved surge margin and slightly better gate charge, but not pin-compatible; requires PCB redesign.	Select for new designs prioritizing long-term availability and enhanced ruggedness; not suitable for drop-in replacement.

Compared with IRF6644TRPBF and STL90N2LH5, STD90NH02LT4 offers the best balance of low R_DS(on), moderate Q_g, and DPAK compatibility-making it optimal for space-constrained, high-efficiency 24 V input DC-DC stages where thermal management is critical.

Availability

STD90NH02LT4 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STD90NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for industrial, automotive, and consumer markets.

STD90NH02LT4 belongs to ST's STripFET™ II Power MOSFET product line-developed specifically for high-efficiency, high-current DC-DC conversion in telecom infrastructure, computing, and industrial automation equipment.

FAQ

What is the maximum safe operating frequency for STD90NH02LT4 in a synchronous buck converter?

STD90NH02LT4 supports reliable operation up to 1 MHz in well-designed layouts, based on its 13 ns turn-on delay, 75 ns rise time, and 47.5 nC gate charge. Practical limits are set by PCB parasitics and gate driver slew rate-not intrinsic device speed. At 500 kHz, measured switching losses remain below 1.2 W with R_g = 4.7 Ω and V_GS = 12 V.

Does STD90NH02LT4 require a negative gate turn-off voltage to prevent shoot-through?

No. STD90NH02LT4 has a typical V_GS(th) of 1.8 V and exhibits no significant Miller plateau instability below 0 V. Standard 0 V to 12 V gate drive is sufficient when paired with appropriate dead-time control. Its low Q_gls (44 nC) ensures rapid discharge through standard gate drivers without negative biasing.

Can STD90NH02LT4 be used in linear-mode (saturation) operation?

No. This device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability-maximum DC current drops to ~12 A at V_DS = 10 V due to thermal constraints. Continuous linear use risks thermal runaway and junction failure; it must be operated in hard-switched or synchronous rectification modes.

Is STD90NH02LT4 qualified for automotive applications per AEC-Q101?

No. STD90NH02LT4 is not AEC-Q101 qualified. While it operates over –55 °C to +175 °C and meets industrial reliability standards, ST does not certify this specific part for automotive use. For automotive body electronics, ST recommends AEC-Q101-qualified alternatives like STL90N2LH5 or STD80N2LH5.

STD90NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2850 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 95W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD90NH02LT4 FAQ

1.How can I place an order for STD90NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD90NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD90NH02LT4 reliable?

The price and inventory of STD90NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD90NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD90NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD90NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD90NH02LT4?

STD90NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD90NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD90NH02LT4?

For technical support, including STD90NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD90NH02LT4 requirements.

6.How does Aetrix verify that STD90NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD90NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD90NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD90NH02LT4?

All STD90NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD90NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD90NH02LT4 part is unused and in its original packaging.

Return procedure for STD90NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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