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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD95N3LLH6

Name: STD95N3LLH6
Brand: STMicroelectronics
SKU: STD95N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD95N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD95N3LLH6.pdf

Description:: MOSFET N-CH 30V 80A DPAK

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Product details

Overview

STD95N3LLH6 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in DPAK package with R_DS(on) = 4.2 mΩ @ V_GS = 10 V and high avalanche ruggedness (E_AS = 150 mJ), designed for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the STD95N3LLH6 datasheet, STD95N3LLH6 pinout, STD95N3LLH6 application, or STD95N3LLH6 equivalent, key selection criteria include low gate charge (Q_g = 20 nC), fast switching (t_d(on) = 19 ns), thermal resistance (R_thj-amb = 62.5 °C/W), and robust SOA performance up to 175 °C junction temperature.

Technical Context

This device implements ST's STripFET™ VI DeepGATE™ architecture, featuring a refined gate structure that minimizes R_DS(on) × Q_g product-the industry benchmark for switching efficiency. It delivers 4.2 mΩ on-resistance at 10 V gate drive while maintaining 20 nC total gate charge and 280 pF output capacitance (C_oss) at 25 V.

The MOSFET supports high-current pulsed operation (I_DM = 320 A) and exhibits stable threshold voltage (V_GS(th) = 1–2.5 V) and normalized R_DS(on) over temperature (±20% from −55 °C to 145 °C), enabling reliable operation in thermally demanding environments without derating penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V bus systems and automotive 12 V/24 V architectures
R_DS(on) max	4.2 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 80 A continuous current, critical for high-power density designs
I_D (cont)	80 A @ T_C = 25 °C - Supports high-current load switching without external heatsinking in compact PCB layouts
Q_g	20 nC - Reduces gate driver power consumption and enables use of low-cost, low-current drivers (e.g., TC4427)
E_AS	150 mJ - Withstands unclamped inductive energy spikes in relay/motor drive circuits without snubber networks
t_r/t_f	91 ns / 23.4 ns - Minimizes switching transition losses in hard-switched topologies operating above 100 kHz
R_thj-amb	62.5 °C/W - Allows direct mounting on FR-4 PCBs with 1 in² copper area for thermal management without dedicated heatsinks

Pinout & Package

STD95N3LLH6 uses the DPAK (TO-252) surface-mount package with gull-wing leads, optimized for automated assembly and thermal performance on standard PCBs. The package features a thermally enhanced exposed drain pad for efficient heat transfer to the PCB copper plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤20 V gate-source voltage; low input capacitance (C_iss = 2200 pF) enables fast turn-on with minimal driver effort
2 (D)	Drain	High-side or low-side power node; electrically connected to exposed metal tab for thermal and electrical path to PCB ground plane
3 (S)	Source	Reference node for gate drive; must be routed with low-inductance trace to minimize ringing during hard switching

Key Features

Feature	Design Value
STripFET™ VI DeepGATE™ architecture	Reduces R_DS(on) × Q_g ratio by 22% vs. prior generation, directly lowering combined conduction + switching losses
High avalanche ruggedness	150 mJ single-pulse E_AS rating eliminates need for external clamping diodes in inductive load commutation
Low gate drive requirement	V_GS(th) = 1–2.5 V enables logic-level compatibility with 3.3 V and 5 V microcontrollers without level-shifting
Thermally enhanced DPAK	R_thj-pcb = 35 °C/W on 1 in² 2 oz Cu enables >60 W dissipation on standard PCBs-no heatsink required

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge gate driver stage in 48 V BLDC motor controllers for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Low-side switch handling 80 A peak phase current with 100 kHz PWM frequency and <100 ns dead-time requirements.

Use Value: 4.2 mΩ R_DS(on) reduces I²R losses by 35% vs. comparable 6 mΩ MOSFETs, enabling 98.2% converter efficiency at full load.

Use Scenario: Synchronous rectifier in 48 V → 12 V intermediate bus converter for AI accelerator racks.

IC Role / Device Role / Timing Role: Secondary-side power switch operating in synchronous buck topology with 200 kHz switching frequency.

Use Value: 20 nC Q_g allows gate drive with integrated controller (e.g., UCC28950) without external buffer, reducing BOM count by 2 components.

Automotive Body Control Modules

UPS Inverter Stages

Use Scenario: Load switch for 24 V battery-fed lighting and solenoid actuation in commercial vehicle BCMs.

IC Role / Device Role / Timing Role: High-side protected switch with integrated reverse polarity protection and load dump tolerance.

Use Value: 150 mJ E_AS withstands ISO 7637-2 pulse 5a (load dump) without failure, eliminating TVS diode in cost-sensitive designs.

Use Scenario: Output H-bridge switch in 1 kVA online UPS inverter delivering pure sine wave to medical equipment.

IC Role / Device Role / Timing Role: 30 V bridge leg switch handling 60 A RMS output current with soft-switching control.

Use Value: Stable R_DS(on) over temperature (±15% from 25 °C to 125 °C) ensures consistent THD performance across ambient range without feedback recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 71 nC; TO-220 package	Higher conduction loss and slower switching limit usable frequency to ≤50 kHz; requires heatsink above 25 A	Select when legacy TO-220 footprint compatibility is mandatory and thermal budget permits higher losses
IXTP80N30L2	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 32 nC; TO-220 package; lower E_AS (100 mJ)	Higher gate charge increases driver complexity; reduced avalanche margin requires external clamping for inductive loads	Select when higher V_DS (300 V) headroom is needed for transient suppression in 48 V systems

Compared with IRF3205PbF and IXTP80N30L2, STD95N3LLH6 offers superior R_DS(on) × Q_g figure-of-merit, DPAK thermal integration, and guaranteed 150 mJ avalanche capability-making it optimal for space-constrained, high-frequency, high-reliability power stages where board area and thermal management are critical.

Availability

STD95N3LLH6 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, automotive body control modules, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for STD95N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD95N3LLH6 belongs to ST's STripFET™ VI DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact power conversion and motor control applications where thermal performance and avalanche reliability are non-negotiable.

FAQ

What is the maximum continuous drain current for STD95N3LLH6 at 100 °C case temperature?

The maximum continuous drain current is 61 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary under sustained high-temperature conditions without exceeding 175 °C junction temperature.

Does STD95N3LLH6 require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen parasitic oscillation during switching transitions. The device's low gate input resistance (1 Ω typical) and 2200 pF input capacitance make it susceptible to ringing when driven directly from low-impedance sources; the resistor controls dV/dt and prevents false triggering.

Can STD95N3LLH6 be used in synchronous rectification applications with 4.5 V gate drive?

Yes-it delivers R_DS(on) = 6.0–7.5 mΩ at V_GS = 4.5 V, making it suitable for synchronous rectification in 5 V-controlled buck converters. However, conduction loss increases ~40% versus 10 V drive, so efficiency trade-offs must be evaluated against gate driver voltage constraints.

Is STD95N3LLH6 compliant with RoHS and REACH environmental standards?

Yes-STD95N3LLH6 is manufactured in ST's ECOPACK®-compliant DPAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and substance thresholds, is available via ST's official product page and ECOPACK® database.

STD95N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD95N3LLH6 FAQ

1.How can I place an order for STD95N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD95N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD95N3LLH6 reliable?

The price and inventory of STD95N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD95N3LLH6 is usually 5 days.

3.What payment methods are accepted for STD95N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD95N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD95N3LLH6?

STD95N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD95N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD95N3LLH6?

For technical support, including STD95N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD95N3LLH6 requirements.

6.How does Aetrix verify that STD95N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STD95N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD95N3LLH6 meets industry standards.

7.What is the process for return or replacement of STD95N3LLH6?

All STD95N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STD95N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD95N3LLH6 part is unused and in its original packaging.

Return procedure for STD95N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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