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STMicroelectronics STD9N80K5

Name: STD9N80K5
Brand: STMicroelectronics
SKU: STD9N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD9N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD9N80K5.pdf

Description:: MOSFET N-CHANNEL 800V 7A DPAK

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Product details

Overview

STD9N80K5 from STMicroelectronics is an N-channel 800 V, 7 A high-voltage power MOSFET in DPAK (TO-252) package, featuring 730 mΩ typ. R_DS(on), 12 nC total gate charge, and 100% avalanche tested operation. It delivers ultra-low gate charge and industry-leading figure of merit for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives.

For engineers reviewing the STD9N80K5 datasheet, STD9N80K5 pinout, STD9N80K5 application, or STD9N80K5 equivalent, key selection criteria include its 800 V V_(BR)DSS, 110 W P_TOT at T_C = 25 °C, 1.14 °C/W R_thJC, Zener-protected gate, and MDmesh K5 vertical structure enabling superior power density in space-constrained HV designs.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical superjunction architecture to achieve a 730 mΩ typical on-resistance at 800 V rating-significantly lower than prior-generation 800 V MOSFETs. Its optimized cell layout reduces both R_DS(on) × area and gate charge, directly improving conduction and switching losses.

The integrated Zener-protected gate enables robust ESD immunity (±30 V V_GS rating), while 100% unclamped inductive switching (UIS) testing up to 200 mJ ensures ruggedness in hard-switched topologies. The source-drain diode exhibits 292 ns t_rr and low Q_rr (2.66 µC), supporting efficient quasi-resonant and ZVS operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands DC bus voltages up to 640 V in 800 V-class SMPS with margin
R_DS(on) max	900 mΩ - Ensures ≤1.1 W conduction loss at 3.5 A ID, critical for thermal management
Q_g	12 nC - Enables fast, low-loss switching with standard gate drivers (e.g., 1 A peak)
I_D cont @ T_C=100°C	4.4 A - Supports sustained operation in enclosed industrial enclosures without forced cooling
E_AS	200 mJ - Guarantees single-pulse avalanche survivability in overvoltage transients
R_thJC	1.14 °C/W - Allows >90 W dissipation with modest heatsinking (e.g., 20 °C/W sink + ambient)
t_r/t_f	5.7 ns / 13.6 ns - Minimizes switching transition time, reducing overlap loss in hard-switched converters

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standardized 3-pin surface-mount outline compliant with JEDEC TO-252-2 variant (Type A2/C3).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; ±30 V absolute max rating protects against transient overstress
2 (S)	Source	Reference node for gate drive and current sensing; tied to PCB ground plane for low-inductance return path
3 (TAB/D)	Drain (exposed pad)	Main high-side power terminal; electrically and thermally connected to large copper pour for heat extraction

Key Features

Feature	Design Value
MDmesh K5 vertical superjunction structure	Reduces R_DS(on) × area by >30% vs. K3/K4, enabling smaller PCB footprints in HV offline converters
Ultra-low Q_g (12 nC)	Lowers gate drive power and enables use of cost-effective 1 A drivers without slew rate compromise
Zener-protected gate	Eliminates need for external gate protection components in noisy industrial environments
100% UIS tested	Validates reliability under real-world inductive switching stress without derating assumptions
Low C_oss (37 pF) & Co(er) (22 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies

Applications

Industrial SMPS

Server PFC Stages

Use Scenario: 3 kW continuous-output telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 640 V DC bus and 7 A peak current during PWM on-time.

Use Value: 730 mΩ R_DS(on) limits conduction loss to <1.2 W; 12 nC Q_g enables clean 50 ns turn-on with minimal driver heating.

Use Scenario: 3.5 kW two-stage server PSU where boost PFC operates at 70 kHz with 800 V bulk capacitor.

IC Role / Device Role / Timing Role: Boost switch subjected to repetitive 640 V V_DS transitions and 7 A average current.

Use Value: 200 mJ E_AS withstands line surges; 292 ns t_rr prevents shoot-through in synchronous rectification control windows.

Motor Drive Inverters

EV Charger Auxiliary Supplies

Use Scenario: 5 kW HVAC inverter using 3-phase IGBT/MOSFET hybrid stage with 600 V DC link.

IC Role / Device Role / Timing Role: Brake chopper switch clamping regenerative energy into snubber resistors during deceleration.

Use Value: 800 V rating provides 33% voltage margin over 600 V bus; 1.14 °C/W R_thJC allows direct mounting to chassis for passive cooling.

Use Scenario: 1.2 kW isolated auxiliary supply in 22 kW AC EV charger, powering control circuitry from 800 V battery input.

IC Role / Device Role / Timing Role: Active clamp flyback primary switch managing 750 V reflected voltage spikes.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during fast voltage transients; Zener gate ensures long-term gate oxide integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK80ZFP	800 V, 9 A, 850 mΩ max R_DS(on), TO-220FP package, no Zener gate protection	Higher current rating but larger footprint and no integrated gate protection	Select when higher continuous current (>7 A) is required and through-hole mounting is acceptable
IPP60R099C7	650 V, 50 A, 99 mΩ R_DS(on), TO-220, CoolMOS C7 technology	Lower voltage rating (650 V), incompatible for 800 V bus designs; superior R_DS(on) only at ≤650 V	Select only for 400–600 V systems requiring ultra-low conduction loss; not a drop-in replacement

Compared with STP9NK80ZFP and IPP60R099C7, STD9N80K5 uniquely balances 800 V capability, DPAK surface-mount compatibility, Zener gate protection, and best-in-class FoM-making it optimal for compact, high-reliability HV offline converters where board space and surge immunity are critical.

Availability

STD9N80K5 is available at Aetrix Electronics and suitable for industrial SMPS, server PFC stages, and motor drive inverters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for STD9N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD9N80K5 belongs to ST's MDmesh K5 high-voltage power MOSFET family, engineered specifically for high-efficiency, high-power-density offline switch-mode power supplies and industrial motor controls operating up to 800 V DC bus.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STD9N80K5 supports 4.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11297 Rev 4. This rating reflects thermal derating due to junction-to-case resistance (1.14 °C/W) and ensures safe operation without exceeding 150 °C maximum junction temperature under steady-state conditions with appropriate heatsinking.

Does STD9N80K5 include integrated gate protection?

Yes-STD9N80K5 features an integrated Zener diode between gate and source, providing ±30 V gate-source voltage clamping. This eliminates the need for external gate protection components and enhances system-level robustness against ESD events and gate drive transients in industrial environments, as confirmed in the "Features" section and Absolute Maximum Ratings table.

How does the MDmesh K5 technology improve efficiency versus earlier ST MOSFETs?

MDmesh K5 reduces specific on-resistance (R_DS(on) × area) by optimizing the superjunction pillar geometry and doping profile. Compared to K3-generation devices, this yields up to 35% lower R_DS(on) at 800 V and 25% lower gate charge-directly cutting both conduction and switching losses in high-frequency SMPS, as validated in Figure 6 (R_DS(on) vs. I_D) and Table 5 (Q_g = 12 nC).

Can STD9N80K5 be used in avalanche mode for energy recovery?

Yes-STD9N80K5 is 100% tested for unclamped inductive switching (UIS) with E_AS = 200 mJ (single pulse, T_j = 25 °C). This makes it suitable for controlled avalanche operation in snubberless designs or energy recovery circuits, provided peak avalanche current (I_AR = 2.4 A) and voltage constraints per Figure 13 are respected to avoid cumulative junction temperature rise.

STD9N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD9N80K5 FAQ

1.How can I place an order for STD9N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD9N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD9N80K5 reliable?

The price and inventory of STD9N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD9N80K5 is usually 5 days.

3.What payment methods are accepted for STD9N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD9N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD9N80K5?

STD9N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD9N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD9N80K5?

For technical support, including STD9N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD9N80K5 requirements.

6.How does Aetrix verify that STD9N80K5 is sourced from the original manufacturer or authorized distributors?

All STD9N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD9N80K5 meets industry standards.

7.What is the process for return or replacement of STD9N80K5?

All STD9N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STD9N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD9N80K5 part is unused and in its original packaging.

Return procedure for STD9N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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