Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF20N60M2-EP

Name: STF20N60M2-EP
Brand: STMicroelectronics
SKU: STF20N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF20N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF20N60M2-EP.pdf

Description:: MOSFET N-CH 600V 13A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,794

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF20N60M2-EP from STMicroelectronics is an N-channel 600 V, 13 A Power MOSFET in TO-220FP package, fabricated with MDmesh™ M2 Enhanced Performance (EP) technology. It delivers 0.230 Ω typ. R_DS(on), 22 nC total gate charge, and 7.2 µJ turn-off energy at 2 A - optimized for >150 kHz high-frequency switching in SMPS and resonant converters.

For engineers reviewing the STF20N60M2-EP datasheet, STF20N60M2-EP pinout, STF20N60M2-EP application, or STF20N60M2-EP equivalent, key selection criteria include avalanche ruggedness (138 mJ E_AS), Zener-protected gate, low C_oss profile (50 pF), and 100% UIS tested reliability under unclamped inductive loads.

Technical Context

This MOSFET employs a strip-based vertical structure to minimize R_DS(on) while maintaining fast switching via reduced Q_gd (10.5 nC) and low C_oss (50 pF). Its gate threshold voltage (3.25–4.75 V) ensures robust noise immunity in high-dV/dt environments up to 50 V/ns.

The integrated body diode exhibits 230 ns reverse recovery time (T_j = 25 °C) and 2.3 µC Q_rr, enabling efficient hard-switched and quasi-resonant topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% voltage margin for transient spikes
R_DS(on) max	0.278 Ω - limits conduction loss to ≤1.2 W at 13 A continuous drain current
Q_g	22 nC - enables fast 10.5 ns turn-on delay with low gate drive power demand
E_off	7.2 µJ @ 2 A - reduces switching loss by >40% vs legacy 600 V MOSFETs in 150–500 kHz range
T_j max	150 °C - allows operation in compact heatsinked enclosures with R_thj-case = 5 °C/W
V_ISO	2.5 kV RMS - provides reinforced insulation between leads and heatsink for safety-critical AC/DC systems

Pinout & Package

TO-220FP package: insulated flange, single in-line 3-pin configuration with creepage ≥3 mm and clearance ≥2.5 mm per IEC 60950-1. Mounting hole Ø3.0–3.2 mm centered on flange.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	High-side switching node; electrically connected to insulated flange for direct heatsink mounting
G (Pin 1)	Gate	Control input with ±25 V rating; Zener-protected against overvoltage transients
S (Pin 3)	Source	Power return path; referenced to PCB ground plane; carries full load current and diode recovery charge

Key Features

Feature	Design Value
MDmesh™ M2 EP technology	Combines trench-gate geometry with optimized drift region for simultaneous low R_DS(on) and low C_oss
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche energy handling up to 138 mJ at T_j = 25 °C
Zener-protected gate	Integrated 25 V clamp prevents gate oxide damage during layout-induced ringing or ESD events
Low turn-off switching losses	E_off = 7.2 µJ @ 2 A enables >95% efficiency in LLC resonant converters operating at 300 kHz
Optimized COSS profile	C_oss = 50 pF with minimal voltage dependence - reduces dead-time losses and improves ZVS initiation

Applications

Server PSU

Industrial SMPS

Use Scenario: 3 kW 48 V output server power supply using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side primary switch operating at 250 kHz with synchronous rectification control.

Use Value: Low Q_gd/Q_g ratio (0.48) minimizes Miller-induced shoot-through risk during high dv/dt transitions.

Use Scenario: 1.5 kW industrial AC/DC front-end with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: PFC boost switch handling 13 A peak current at 100–150 kHz switching frequency.

Use Value: 0.230 Ω typ. R_DS(on) reduces conduction loss by 1.8 W vs comparable 600 V devices, lowering thermal stress on heatsink.

EV Onboard Charger

Telecom Rectifier

Use Scenario: Bidirectional OBC stage converting 400 V battery to 400 V AC grid interface.

IC Role / Device Role / Timing Role: Half-bridge leg switch in dual-active-bridge (DAB) topology with soft-switching requirements.

Use Value: 230 ns t_rr and 2.3 µC Q_rr enable zero-current switching (ZCS) turn-on with <5% circulating loss penalty.

Use Scenario: 48 V telecom rectifier module operating in harsh ambient (70 °C baseplate).

IC Role / Device Role / Timing Role: Primary-side switch in forward converter with 120 kHz fixed-frequency operation.

Use Value: R_thj-case = 5 °C/W allows direct mounting to aluminum chassis without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF20N60M2	No "-EP" suffix; identical die but non-insulated TO-220 package (no V_ISO rating)	Requires isolated mounting hardware for safety-critical isolation; unsuitable where 2.5 kV RMS insulation is mandated	Select when cost-sensitive and isolation is handled externally via insulating pads or bushings
IPP60R099C7	Infineon CoolMOS™ C7; 600 V, 0.099 Ω, 22 A; higher ID but larger Q_g (42 nC)	Better conduction loss at high current, but higher gate drive loss and slower switching above 200 kHz	Prefer for <100 kHz PFC stages needing lower R_DS(on); avoid in >250 kHz resonant converters due to Q_g penalty

Compared with STF20N60M2-EP, STF20N60M2 lacks reinforced insulation and requires external isolation, while IPP60R099C7 trades higher gate charge and slower switching for lower conduction loss - making STF20N60M2-EP optimal for compact, high-frequency, safety-certified designs.

Availability

STF20N60M2-EP is available at Aetrix Electronics and suitable for server PSUs, industrial SMPS, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and certified insulation performance.

Supply support for STF20N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 EP high-voltage Power MOSFET product line, engineered specifically for ultra-high-frequency switching power supplies demanding low switching loss, avalanche ruggedness, and reinforced insulation.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF20N60M2-EP supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11486 Rev 4. This derating reflects thermal limitations of the TO-220FP package's 5 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Does this MOSFET include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source rated for ±25 V, providing inherent protection against gate oxide breakdown during voltage transients or layout-induced ringing, as confirmed in the "Features" section and absolute maximum ratings table.

Can STF20N60M2-EP replace STF20N60M2 in existing designs?

No direct replacement: STF20N60M2 uses standard TO-220 (non-insulated), while STF20N60M2-EP uses TO-220FP with 2.5 kV RMS insulation. Substitution requires mechanical redesign to eliminate external isolation and verify creepage/clearance compliance per IEC 62368-1.

What is the typical reverse recovery charge of the body diode?

The typical reverse recovery charge (Q_rr) is 2.3 µC at T_j = 25 °C, measured with I_SD = 13 A, di/dt = 100 A/µs, and V_DD = 60 V, per Table 8 in DS11486 Rev 4. At 150 °C, Q_rr increases to 2.9 µC due to carrier lifetime effects.

STF20N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF20N60M2-EP FAQ

1.How can I place an order for STF20N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STF20N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF20N60M2-EP reliable?

The price and inventory of STF20N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF20N60M2-EP is usually 5 days.

3.What payment methods are accepted for STF20N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF20N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF20N60M2-EP?

STF20N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF20N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF20N60M2-EP?

For technical support, including STF20N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF20N60M2-EP requirements.

6.How does Aetrix verify that STF20N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STF20N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF20N60M2-EP meets industry standards.

7.What is the process for return or replacement of STF20N60M2-EP?

All STF20N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STF20N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF20N60M2-EP part is unused and in its original packaging.

Return procedure for STF20N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …