STMicroelectronics STF25N10F7
- Part No.:
- STF25N10F7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF25N10F7.pdf
- Description:
- MOSFET N-CH 100V 19A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:3,739
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Product details
Overview
STF25N10F7 from STMicroelectronics is an N-channel 100 V, 0.035 Ω (max) at VGS = 10 V, 19 A continuous drain current (TC = 25 °C), 25 W total power dissipation Power MOSFET in TO-220FP package, utilizing STripFET™ VII and DeepGATE™ technology for ultra-low RDS(on). It serves as a high-efficiency main switch in offline SMPS and DC-DC converters.
For engineers reviewing the STF25N10F7 datasheet, STF25N10F7 pinout, STF25N10F7 application, or STF25N10F7 equivalent, this page delivers verified electrical ratings, thermal resistance (Rthj-case = 6 °C/W), switching times (td(off) = 14.8 ns typ.), avalanche ruggedness, and TO-220FP terminal mapping - all critical for power stage layout and SOA validation.
Technical Context
This MOSFET employs ST's 7th-generation STripFET™ process with a redesigned gate structure to minimize conduction loss while maintaining fast switching. Its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions.
The TO-220FP package features an isolated tab (VISO = 2500 V RMS), enabling direct heatsink mounting without insulating hardware. Thermal resistance junction-to-case is 6 °C/W, supporting stable operation up to TJ = 175 °C with appropriate heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; suitable for 85–265 VAC offline input stages after rectification. |
| RDS(on) max | 0.035 Ω @ VGS = 10 V - Enables <1.25 W conduction loss at 19 A, reducing thermal stress in compact power supplies. |
| ID cont | 19 A @ TC = 25 °C - Continuous current rating defined at case temperature; derates to 13.5 A at TC = 100 °C. |
| PTOT | 25 W @ TC = 25 °C - Total power dissipation limit; requires ≥ 6 °C/W heatsink to maintain safe junction temperature. |
| td(off) | 14.8 ns typ. - Short turn-off delay supports >500 kHz switching in resonant topologies with minimal dead-time overhead. |
| Qg | 14 nC - Gate charge value determines driver strength requirement; compatible with standard 1-A peak gate drivers. |
| Ciss | 920 pF - Input capacitance impacts gate drive loop stability and EMI filter design in high-frequency converters. |
Pinout & Package
STF25N10F7 is housed in a TO-220FP (Full-Pak) package with insulated tab, offering 2500 V RMS isolation between leads and heatsink. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain internally connected to the metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; threshold voltage VGS(th) = 2.5–4.5 V enables compatibility with 5 V and 3.3 V controllers. |
| 2 (Drain) | High-side power node | Internally bonded to the metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Source) | Return path / reference node | Serves as local power ground for gate driver; low-inductance PCB routing essential to suppress ringing during hard switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.027 Ω typ. at VGS = 10 V - Reduces conduction losses by ~25% vs. prior STripFET™ VI generation in same package. |
| 100% avalanche rated | Unclamped inductive switching validated per JEDEC JESD24-1 - eliminates need for external snubbers in flyback and LLC primary switches. |
| DeepGATE™ structure | Optimized gate field distribution - improves dv/dt immunity and reduces Miller capacitance (Crss = 19 pF) for cleaner turn-off. |
| ECOPACK® compliant | Lead-free, RoHS-compliant TO-220FP package - meets industrial environmental compliance without performance trade-offs. |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: High-density 1 kW server power supply operating at 300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main high-side switching element handling 19 A peak drain current and 100 V bus voltage. Use Value: Low RDS(on) and 14 nC Qg enable >95% efficiency at full load while minimizing gate driver losses and thermal footprint. |
Use Scenario: 750 W brushless DC motor drive with 3-phase inverter stage in factory automation equipment. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration, commutated at ≤20 kHz with 12 V gate drive. Use Value: Avalanche ruggedness and 175 °C max junction temperature support reliable operation under short-circuit and regenerative braking transients. |
| LED Streetlight Driver | Telecom DC-DC Brick |
|
Use Scenario: Constant-current 150 W LED driver using quasi-resonant flyback with universal AC input. IC Role / Device Role / Timing Role: Primary-side power switch subjected to repetitive unclamped inductive energy recovery. Use Value: 100% avalanche testing ensures no failure mode under line surges or output short circuits, eliminating field returns. |
Use Scenario: 48 V input, 12 V/20 A isolated DC-DC converter module for telecom base station power distribution. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side active clamp circuit. Use Value: Low Ciss (920 pF) and fast tr/tf (14 ns / 4.6 ns) reduce switching losses and EMI across 300–600 kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STD25N10F7 | RDS(on) max = 0.035 Ω, ID = 25 A, PTOT = 40 W, DPAK package | Higher current rating but lower power dissipation margin; requires PCB copper area instead of heatsink | Select when board space is constrained and thermal management relies on 2 oz copper + thermal vias |
| STP25N10F7 | RDS(on) max = 0.035 Ω, ID = 25 A, PTOT = 50 W, TO-220 package | Higher power rating and lower Rthj-case (3 °C/W) but non-isolated tab | Select when maximum thermal performance is required and heatsink isolation is handled externally |
Compared with STD25N10F7 and STP25N10F7, STF25N10F7 offers the optimal balance of isolation safety (TO-220FP), moderate power handling (25 W), and standardized through-hole assembly - ideal for cost-sensitive industrial power supplies where heatsink isolation simplifies certification.
Availability
STF25N10F7 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, LED streetlight drivers, and telecom DC-DC bricks requiring stable component supply and long-term industrial lifecycle support.
Supply support for STF25N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STF25N10F7 belongs to the STripFET™ VII DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial-grade AC-DC and DC-DC power conversion systems.
FAQ
Is STF25N10F7 suitable for 230 VAC input rectified applications?
Yes. With a 100 V VDS rating and typical RDS(on) of 0.027 Ω, it supports designs where peak rectified voltage remains below 100 V - such as 115 VAC inputs or 230 VAC with active PFC front-end limiting the bulk voltage to ≤400 V before the final switching stage. For direct 230 VAC rectified use, a higher-voltage MOSFET is required.
What is the maximum gate-source voltage rating for STF25N10F7?
The absolute maximum VGS is ±20 V per datasheet Table 2. Operation above ±20 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V or −5 V recommended for turn-off to ensure clean channel depletion and avoid shoot-through in bridge configurations.
Does STF25N10F7 require a gate resistor for stability?
Yes. A series gate resistor (typically 4.7–10 Ω) is required to dampen parasitic oscillation caused by PCB trace inductance interacting with Ciss and Crss. The datasheet specifies switching time test conditions using RG = 4.7 Ω; omitting it may cause excessive ringing, EMI, and premature device failure.
Can STF25N10F7 replace older STF20NM50 in existing designs?
No. STF20NM50 is a 500 V, 20 A device with different voltage class, RDS(on), and thermal characteristics. STF25N10F7 operates at 100 V and cannot withstand 500 V drain spikes. Direct replacement would result in catastrophic failure. A proper redesign evaluating voltage margin, SOA, and gate drive compatibility is mandatory.
STF25N10F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 920 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF25N10F7 FAQ
1.How can I place an order for STF25N10F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF25N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF25N10F7 reliable?
The price and inventory of STF25N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF25N10F7 is usually 5 days.
3.What payment methods are accepted for STF25N10F7?
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4.How is shipping managed for STF25N10F7?
STF25N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF25N10F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF25N10F7?
For technical support, including STF25N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF25N10F7 requirements.
6.How does Aetrix verify that STF25N10F7 is sourced from the original manufacturer or authorized distributors?
All STF25N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF25N10F7 meets industry standards.
7.What is the process for return or replacement of STF25N10F7?
All STF25N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STF25N10F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF25N10F7 part is unused and in its original packaging.
Return procedure for STF25N10F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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