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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF4N62K3

Name: STF4N62K3
Brand: STMicroelectronics
SKU: STF4N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF4N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF4N62K3.pdf

Description:: MOSFET N-CH 620V 3.8A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,655

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Product details

Overview

STF4N62K3 from STMicroelectronics is an N-channel 620 V, 1.7 Ω typ. (2 Ω max.), 3.8 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters where avalanche ruggedness and low Coss are critical.

For engineers reviewing the STF4N62K3 datasheet, STF4N62K3 pinout, STF4N62K3 application, or STF4N62K3 equivalent, key selection criteria include its 100% avalanche-tested rating (EAS = 115 mJ), 12 V/ns dv/dt capability, Zener-protected gate, and optimized diode reverse recovery (trr = 220 ns at TJ = 25 °C).

Technical Context

This device employs ST's MDmesh K3 vertical superjunction architecture to achieve ultra-low RDS(on) × area trade-off while maintaining high breakdown voltage. Its dynamic performance is characterized by low Crss (7 pF), low Coss eq. (27 pF), and fast switching (td(off) = 29 ns, tf = 19 ns) under 300 V/1.9 A resistive load conditions.

The integrated source-drain diode features improved reverse recovery (Qrr = 1.4 µC, IRRM = 13 A) and low forward drop (VSD = 1.6 V @ ISD = 3.8 A), enabling efficient hard-switched and quasi-resonant topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Withstands full mains surge in 230 VAC systems with margin for transient overvoltage.
R_DS(on) max	2 Ω @ V_GS = 10 V, I_D = 1.9 A - Enables <1.4 W conduction loss at 3.8 A DC, suitable for thermally constrained TO-220FP layouts.
E_AS	115 mJ @ T_J = 25 °C - Fully tested single-pulse avalanche energy supports unclamped inductive switching without derating.
C_oss eq.	27 pF - Low effective output capacitance reduces turn-off switching loss and improves ZVS initiation in resonant converters.
trr	220 ns @ I_SD = 3.8 A, di/dt = 100 A/µs - Fast, soft diode recovery minimizes voltage overshoot and EMI in bridge-leg configurations.
dv/dt rating	12 V/ns - Robust immunity to parasitic turn-on in high-speed, high-dV/dt environments like LLC and phase-shifted full-bridge.
V_GS(th)	3.75 V typ. (3–4.5 V range) - Ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding false triggering.

Pinout & Package

STF4N62K3 is housed in a TO-220FP (Type B) package with isolated tab, rated for 2.5 kV RMS insulation between leads and heatsink. The package provides 5 °C/W junction-to-case thermal resistance and is compatible with standard TO-220 mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±30 V; R_g = 5 Ω typical.
2 (D, Tab)	Drain (exposed metal tab)	Main high-side power terminal; electrically connected to heatsink; requires isolation washer for non-grounded heatsinks.
3 (S)	Source	Power return path and gate reference; forms common node with driver ground in low-side switch configuration.

Key Features

Feature	Design Value
100% avalanche tested	Each unit validated for EAS = 115 mJ, eliminating need for system-level avalanche derating.
Extremely high dv/dt capability	12 V/ns rating ensures stable operation in fast-switching topologies without spurious turn-on.
Very low intrinsic capacitance	Ciss = 550 pF, Crss = 7 pF - Reduces gate drive power and improves efficiency above 100 kHz.
Zener-protected gate	±30 V V_GS rating with integrated protection - eliminates need for external gate Zener clamps.
Improved diode reverse recovery	Qrr = 1.4 µC, trr = 220 ns - Low stored charge enables use in synchronous rectification and half-bridge freewheeling.

Applications

Industrial AC-DC Power Supplies

Server & Telecom PFC Stages

Use Scenario: Active clamp flyback and LLC resonant converters in 300–500 W industrial power supplies operating from universal AC input.

IC Role / Device Role / Timing Role: High-side primary switch handling 620 V DC link, switching at 70–300 kHz with zero-voltage switching assistance.

Use Value: Low Coss eq. (27 pF) and fast trr (220 ns) reduce dead-time losses and improve light-load efficiency by >1.2%.

Use Scenario: Boost PFC front-end in 1 kW server PSUs requiring high reliability and THD compliance under variable line/load.

IC Role / Device Role / Timing Role: Main boost switch in continuous conduction mode (CCM), conducting up to 3.8 A RMS with peak currents to 15.2 A.

Use Value: 100% avalanche testing and 12 V/ns dv/dt rating prevent failure during line surges and inrush events without snubber circuits.

Motor Drive Inverter Stages

High-Voltage DC-DC Converters

Use Scenario: Half-bridge leg in 200–400 V DC bus motor drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element with source-connected to driver ground; handles bidirectional inductive current via body diode.

Use Value: Optimized diode Qrr (1.4 µC) and low VSD (1.6 V) cut freewheeling losses by 35% vs. standard superjunction MOSFETs.

Use Scenario: Primary-side switch in isolated 400–800 V output DC-DC modules for EV charging infrastructure and renewable energy inverters.

IC Role / Device Role / Timing Role: Hard-switched high-voltage switch operating at 50–150 kHz with 620 V blocking requirement.

Use Value: RDS(on) of 1.7 Ω typ. limits conduction loss to ≤2.5 W at 3.8 A, enabling natural convection cooling in compact module designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STI4N62K3	I²PAK package; RthJC = 1.79 °C/W (vs. 5 °C/W); same electrical specs.	Better thermal performance for higher ambient or forced-air-cooled designs; larger footprint.	Select when junction temperature must stay below 135 °C at >2.5 A continuous in compact enclosures.
STU4N62K3	IPAK (TO-251) package; surface-mount; RthJC = 1.79 °C/W; same die.	Enables automated assembly and board-level thermal management; no through-hole mounting.	Choose for space-constrained, high-volume PCBs where reflow compatibility and layout density are prioritized.

Compared with STI4N62K3 and STU4N62K3, the STF4N62K3 offers lowest cost-per-unit and simplest mechanical integration in TO-220FP-based designs, while trading off thermal resistance and mountability for ease of prototyping and service replacement.

Availability

STF4N62K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom PFC stages, and motor drive inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for STF4N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative solutions across automotive, industrial, power, and digital markets since 1987.

The MDmesh K3 series was engineered specifically for high-efficiency, high-reliability high-voltage switching in offline power conversion-emphasizing avalanche robustness, low dynamic losses, and diode performance over raw RDS(on) minimization.

FAQ

Is STF4N62K3 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low Coss eq. (27 pF) and fast, soft body diode (trr = 220 ns, Qrr = 1.4 µC) enable reliable ZVS turn-on in LLC and phase-shifted full-bridge converters up to 300 kHz. Measured EAS = 115 mJ ensures margin during transient ZVS failure modes.

What gate drive voltage is required for full enhancement?

A minimum VGS of 10 V is required to achieve RDS(on) ≤ 2 Ω. The gate threshold is 3.75 V typ., but operation below 8 V increases RDS(on) significantly (e.g., 3.2 Ω at VGS = 8 V). ST recommends 12–15 V drive for optimal conduction and noise immunity.

Does STF4N62K3 require external gate protection?

No. It integrates a Zener diode between gate and source rated for ±30 V, making external gate clamping unnecessary in standard 10–15 V drive applications. This simplifies gate driver design and improves board-level reliability.

How does its body diode performance compare to standard superjunction MOSFETs?

Its body diode delivers 35% lower Qrr (1.4 µC vs. typical 2.2 µC), 20% faster trr (220 ns vs. 275 ns), and 15% lower VSD (1.6 V vs. 1.85 V) at 3.8 A, directly reducing freewheeling losses and EMI in bridge configurations without adding Schottky catch diodes.

STF4N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF4N62K3 FAQ

1.How can I place an order for STF4N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF4N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF4N62K3 reliable?

The price and inventory of STF4N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF4N62K3 is usually 5 days.

3.What payment methods are accepted for STF4N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF4N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF4N62K3?

STF4N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF4N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF4N62K3?

For technical support, including STF4N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF4N62K3 requirements.

6.How does Aetrix verify that STF4N62K3 is sourced from the original manufacturer or authorized distributors?

All STF4N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF4N62K3 meets industry standards.

7.What is the process for return or replacement of STF4N62K3?

All STF4N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF4N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF4N62K3 part is unused and in its original packaging.

Return procedure for STF4N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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