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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF6NM60N

Name: STF6NM60N
Brand: STMicroelectronics
SKU: STF6NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF6NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF6NM60N.pdf

Description:: MOSFET N-CH 600V 4.6A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,842

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Product details

Overview

STF6NM60N from STMicroelectronics is an N-channel 600 V, 0.85 Ω (typ), 4.6 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters operating up to 150 °C junction temperature, with 100% avalanche tested ruggedness and low gate charge (13 nC) enabling fast switching in SMPS and PFC stages.

For engineers reviewing the STF6NM60N datasheet, STF6NM60N pinout, STF6NM60N application, or STF6NM60N equivalent, this device is selected for high-voltage DC-DC conversion where low R_DS(on), controlled dv/dt (40 V/ns), and robust unclamped inductive switching capability are critical design requirements.

Technical Context

This MOSFET implements ST's second-generation MDmesh™ vertical structure combined with strip layout, achieving ultra-low on-resistance and gate charge while maintaining 600 V blocking capability. Its 15 V/ns rated dv/dt and 65 mJ single-pulse avalanche energy support reliable operation under hard-switching and inductive load transients.

The TO-220FP package provides isolated mounting via insulated tab (2500 V RMS withstand voltage), enabling direct heatsink attachment without additional insulation, while its 5 °C/W junction-to-case thermal resistance supports 20 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Sustains full bridge or boost converter bus voltages up to 400 V DC with margin for transient overshoot.
R_DS(on) max	0.92 Ω @ V_GS = 10 V, I_D = 2.3 A - Enables <1.5 W conduction loss at 4.6 A, critical for thermal management in enclosed power supplies.
Q_g	13 nC - Reduces gate drive power and enables >100 kHz switching in LLC or active clamp topologies with standard 1 A drivers.
I_D (cont) @ T_C = 100 °C	2.9 A - Defines usable current derating in real-world heatsink-limited conditions, not just ideal lab ratings.
E_AS	65 mJ - Supports unclamped inductive switching events (e.g., relay coil snubbing or motor phase commutation) without failure.
dv/dt rating	15 V/ns - Limits false turn-on risk during high-speed switching in noisy industrial environments.
T_j max	150 °C - Allows operation in sealed enclosures or high ambient temperature applications (e.g., solar inverters, EV chargers).

Pinout & Package

STF6NM60N uses the TO-220FP (Full-Pak) package: insulated plastic case with electrically isolated tab (2500 V RMS), 3-pin through-hole configuration, and 5 °C/W junction-to-case thermal resistance. Mounting requires no insulating washer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path	Internally connected to metal tab - must be electrically isolated from heatsink unless using isolated mounting hardware.
2 (Gate)	Control input	Low gate input resistance (6 Ω) minimizes ringing; 10 V threshold ensures TTL/CMOS compatibility with 12 V gate drivers.
3 (Source)	Reference node / return path	Provides Kelvin connection point for source sensing; ties directly to PCB ground plane for stable switching node reference.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines optimized vertical drift region and planar strip layout to achieve 0.85 Ω R_DS(on) at 600 V - 30% lower than first-gen equivalents.
100% avalanche tested	Each unit validated for repetitive 2 A avalanche current and 65 mJ single-pulse energy - eliminates need for external snubbers in flyback designs.
Low C_iss/C_oss	420 pF input capacitance and 30 pF output capacitance reduce switching losses and improve EMI profile in high-frequency SMPS.
Isolated tab (TO-220FP)	2500 V RMS insulation between drain and mounting surface - enables direct heatsink mounting without mica washers or silicone pads.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for consumer and industrial CE-marked products.

Applications

AC-DC Adapter

Industrial SMPS

Use Scenario: 65 W universal-input offline flyback converter for laptop adapters.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling 400 V DC bus, switching at 65–130 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g (13 nC) and R_DS(on) (0.85 Ω) reduce total switching + conduction loss to <1.8 W, enabling >89% efficiency at full load.

Use Scenario: 300 W telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch clamped by auxiliary winding, operating at 200 kHz with 50% duty cycle.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during clamp reset; 65 mJ E_AS absorbs leakage inductance spikes without snubber.

PFC Boost Stage

Solar Microinverter

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 250 W server PSU.

IC Role / Device Role / Timing Role: High-side switch controlling inductor current with average current mode control at 65 kHz.

Use Value: Low C_oss (30 pF) minimizes turn-off loss during zero-voltage switching transitions, improving PF correction linearity.

Use Scenario: DC-AC H-bridge stage in single-phase 300 W photovoltaic microinverter.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutating 4.6 A RMS at 20 kHz with sinusoidal PWM.

Use Value: 150 °C T_j max and 2.9 A I_D @ 100 °C enable operation in compact, passively cooled enclosures exposed to rooftop ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NM60N	Same die, TO-220 (non-isolated tab); R_thj-case = 2.78 °C/W vs. 5 °C/W	Requires insulating washer for heatsink mounting; higher thermal performance but added BOM cost and assembly step	Select when thermal budget is tight and isolation can be managed externally.
FQP6N60	600 V, 1.2 Ω R_DS(on), 18 nC Q_g, TO-220; no avalanche rating specified	Lacks 100% avalanche test and has higher switching loss; lower cost but reduced ruggedness margin	Select only for cost-sensitive, non-critical applications with soft-switching or low di/dt loads.

Compared with STP6NM60N, STF6NM60N trades 2.22 °C/W higher thermal resistance for simplified mounting and safety compliance; versus FQP6N60, it delivers 30% lower conduction loss and guaranteed avalanche robustness essential for industrial reliability.

Availability

STF6NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, PFC boost stages, and solar microinverters requiring stable component supply across extended production lifecycles.

Supply support for STF6NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating above 300 V DC bus voltage.

FAQ

What is the maximum safe operating voltage for STF6NM60N in continuous conduction?

The absolute maximum drain-source voltage (V_DS) is rated at 600 V with V_GS = 0. For reliable long-term operation, ST recommends limiting steady-state V_DS to ≤ 480 V (80% of rating) to accommodate voltage spikes and ensure margin against avalanche breakdown under transient conditions.

Can STF6NM60N replace STP6NM60N in an existing TO-220 footprint?

No - STF6NM60N uses TO-220FP with insulated tab and different mechanical dimensions (e.g., L = 9.0–9.4 mm vs. STP6NM60N's 13–14 mm). The pinout matches (Drain-Gate-Source), but heatsink mounting, PCB cutouts, and thermal pad layout require redesign due to isolation and height differences.

Does STF6NM60N include an integrated body diode, and what are its recovery characteristics?

Yes - it features a fast, low-Q_rr source-drain diode with t_rr = 300 ns (T_j = 25 °C) and Q_rr = 2 µC at I_SD = 4.6 A. This enables use in synchronous rectification and freewheeling paths, though reverse recovery must be managed with snubbers in hard-switched topologies.

What gate drive voltage range is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 10 V for full R_DS(on) specification (0.92 Ω max). Operation between 8 V and 12 V is acceptable; below 6 V risks partial turn-on and excessive conduction loss. Gate drive must limit peak current to avoid exceeding ±25 V absolute maximum rating during transients.

STF6NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 920mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF6NM60N FAQ

1.How can I place an order for STF6NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF6NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF6NM60N reliable?

The price and inventory of STF6NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF6NM60N is usually 5 days.

3.What payment methods are accepted for STF6NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF6NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF6NM60N?

STF6NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF6NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF6NM60N?

For technical support, including STF6NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF6NM60N requirements.

6.How does Aetrix verify that STF6NM60N is sourced from the original manufacturer or authorized distributors?

All STF6NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF6NM60N meets industry standards.

7.What is the process for return or replacement of STF6NM60N?

All STF6NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF6NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF6NM60N part is unused and in its original packaging.

Return procedure for STF6NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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