Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF80N10F7

Name: STF80N10F7
Brand: STMicroelectronics
SKU: STF80N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF80N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF80N10F7.pdf

Description:: MOSFET N-CH 100V 40A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,524

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF80N10F7 from STMicroelectronics is an N-channel 100 V, 40 A, 30 W TO-220FP Power MOSFET featuring 0.01 Ω typical R_DS(on), ultra-low gate charge (45 nC), and STripFET™ VII DeepGATE™ technology. It operates as a high-efficiency main or synchronous rectifier switch in DC-DC converters and motor drivers where thermal performance under constrained heatsinking is critical.

For engineers reviewing the STF80N10F7 datasheet, STF80N10F7 pinout, STF80N10F7 application, or STF80N10F7 equivalent, key selection criteria include its 30 W power dissipation at T_C = 25 °C, 1.76 °C/W junction-to-case thermal resistance, and suitability for 100 V bus-level switching with fast turn-on/turn-off times (19 ns t_d(on), 13 ns t_f).

Technical Context

This MOSFET employs ST's 7th-generation STripFET™ VII process with DeepGATE™ gate architecture to minimize R_DS(on) and gate charge simultaneously. Its TO-220FP package integrates a fully insulated flange, enabling direct PCB mounting without mechanical isolation hardware while maintaining safe creepage/clearance.

The device exhibits low output capacitance (C_oss = 700 pF) and reverse transfer capacitance (C_rss = 45 pF) at V_DS = 50 V, supporting high-frequency hard-switching up to 500 kHz. Its source-drain diode delivers 80 A continuous current with 1.1 V forward voltage and 70 ns reverse recovery time at T_j = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 100 V rail applications
R_DS(on) max	0.01 Ω - Ensures ≤ 16 W conduction loss at 40 A continuous drain current
I_D (T_C = 25 °C)	40 A - Continuous current rating with adequate heatsinking on FR4 PCB
P_TOT	30 W - Total power dissipation limit defining thermal design margin at T_C = 25 °C
R_thj-case	1.76 °C/W - Junction-to-case thermal resistance enabling compact heatsink sizing
Q_g	45 nC - Gate charge determining driver strength requirement for <200 ns switching transitions
t_d(on)/t_f	19 ns / 13 ns - Fast switching enables high-frequency operation with reduced switching losses

Pinout & Package

STF80N10F7 uses the TO-220FP (Full-Pak) package: a variant of TO-220 with fully insulated flange and shorter leads optimized for surface-mount compatibility and improved thermal transfer to PCB copper areas.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path and gate reference	Connected directly to PCB ground plane; carries full load current and defines local 0 V reference
2 (Gate)	Control input terminal	High-impedance node requiring <45 nC charge for full enhancement; sensitive to ESD and ringing
3 (Drain)	Main power output terminal	High-voltage node connected to 100 V bus; electrically isolated from flange but thermally coupled
Flange (TAB)	Thermal interface only	Electrically insulated metal surface for heatsinking; no electrical connection to internal die

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.01 Ω max ensures minimal I²R conduction loss in high-current 100 V switching nodes
Extremely low gate charge	45 nC total charge reduces driver power consumption and gate drive loop energy loss
Low gate input resistance	Enables stable PWM control with standard gate drivers without external pull-down resistors
Optimized source-drain diode	70 ns t_rr and 125 nC Q_rr reduce body-diode switching loss in synchronous rectification
TO-220FP insulated flange	Eliminates need for insulating washers or pads when mounting to heatsinks or copper planes

Applications

DC-DC Buck Converter

Motor Drive Half-Bridge

Use Scenario: Primary switch in 12–48 V input, 5–24 V output buck converter for industrial PLCs.

IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz with 40 A peak current capability.

Use Value: 0.01 Ω R_DS(on) limits conduction loss to ≤16 W at full load, while 45 nC Q_g supports efficient gate driving with low-cost controllers.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for automated gate actuators.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling path during PWM off-time.

Use Value: 80 A continuous source-drain current and 1.1 V V_SD enable efficient freewheeling with <1 W diode loss at 40 A.

AC-DC PFC Stage

LED Driver Switch

Use Scenario: Boost switch in active PFC front-end for 100–240 V AC input, 400 V DC bus supplies.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 100 V DC link transients and 40 A peak currents.

Use Value: 100 V V_DS rating provides 20% margin over 400 V bus, while 70 ns t_rr minimizes body-diode loss during zero-voltage switching transitions.

Use Scenario: Constant-current switch in high-brightness LED string driver for street lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator switching at 1–10 kHz with 40 A peak current.

Use Value: 30 W power rating and 1.76 °C/W R_thj-case allow direct mounting to aluminum PCBs, eliminating discrete heatsinks in space-constrained fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80N10F7	Same die, TO-220 package with non-insulated flange; R_thj-case = 1.36 °C/W, P_TOT = 85 W	Requires insulating hardware for heatsink mounting; suited for higher-power, forced-air-cooled systems	Select when thermal budget allows larger heatsink and mechanical isolation is acceptable
STD80N10F7	DPAK package; R_thj-pcb = 50 °C/W; rated for 70 A (T_C = 25 °C), 85 W	Designed for surface-mount assembly and PCB thermal management; lower peak current than TO-220FP	Select for compact, automated PCB assembly where board-level copper acts as primary heatsink

Compared with STF80N10F7, STP80N10F7 offers higher power handling but requires insulation, while STD80N10F7 trades thermal performance for SMT manufacturability-making STF80N10F7 optimal for mid-power through-hole designs needing flange insulation and balanced thermal/electrical specs.

Availability

STF80N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for STF80N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF80N10F7 belongs to the STripFET™ VII DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial and commercial equipment where thermal constraints and reliability are critical.

FAQ

What is the maximum continuous drain current for STF80N10F7 at 100 °C case temperature?

The maximum continuous drain current I_D at T_C = 100 °C is 30 A, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package under real-world heatsink conditions and must be used for thermal design validation-not the 40 A rating at 25 °C.

Does STF80N10F7 have avalanche ruggedness rated in the datasheet?

No, the official datasheet (DocID025865 Rev 1) does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. Designers must implement external clamping or snubbing circuits to avoid destructive avalanche operation during inductive load switching.

Can STF80N10F7 be used in linear mode (ohmic region) for analog current regulation?

While the device can operate in the linear region, it is not characterized or guaranteed for sustained linear-mode use. The Safe Operating Area (SOA) curve in Figure 4 shows limited pulse capability at low V_DS and high I_D, and prolonged ohmic operation risks thermal runaway due to negative temperature coefficient of R_DS(on).

What is the recommended gate resistor value for driving STF80N10F7 in a 200 kHz buck converter?

A 4.7 Ω gate resistor is validated in the datasheet (Figure 19 test circuit) for 200 kHz operation, yielding t_d(on) = 19 ns and t_f = 13 ns. Lower values (≤2.2 Ω) may cause ringing due to gate loop inductance; higher values (>10 Ω) increase switching losses beyond acceptable levels for this frequency.

STF80N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF80N10F7 FAQ

1.How can I place an order for STF80N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF80N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF80N10F7 reliable?

The price and inventory of STF80N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF80N10F7 is usually 5 days.

3.What payment methods are accepted for STF80N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF80N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF80N10F7?

STF80N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF80N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF80N10F7?

For technical support, including STF80N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF80N10F7 requirements.

6.How does Aetrix verify that STF80N10F7 is sourced from the original manufacturer or authorized distributors?

All STF80N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF80N10F7 meets industry standards.

7.What is the process for return or replacement of STF80N10F7?

All STF80N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STF80N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF80N10F7 part is unused and in its original packaging.

Return procedure for STF80N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …