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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI11N65M2

Name: STFI11N65M2
Brand: STMicroelectronics
SKU: STFI11N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI11N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI11N65M2.pdf

Description:: MOSFET N-CH 650V 7A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:7,045

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Product details

Overview

STFI11N65M2 from STMicroelectronics is an N-channel 650 V, 0.60 Ω typ. (0.68 Ω max.), 7 A MDmesh™ M2 Power MOSFET in TO-220FP package, featuring 12.5 nC total gate charge, 20 pF typical output capacitance, and 100% avalanche tested ruggedness. It delivers high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STFI11N65M2 datasheet, STFI11N65M2 pinout, STFI11N65M2 application, or STFI11N65M2 equivalent, key selection criteria include R_DS(on) at 10 V drive, C_oss profile across 0–520 V, unclamped inductive switching robustness (E_AS = 110 mJ), and Zener-protected gate reliability under fast dv/dt transients.

Technical Context

This device employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching energy. Its low Q_gd/Q_gs ratio (5.8 nC / 3.2 nC) enables clean turn-off with minimal Miller-induced oscillation in hard-switched topologies.

The integrated source-drain diode exhibits 318 ns reverse recovery time (T_J = 25 °C) and 2.5 µC Q_rr, supporting quasi-resonant and active-clamp flyback designs. The 2.5 kV RMS insulation rating between leads and heat sink enables direct mounting without isolation pads in industrial AC-DC systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 VAC input rectified rails with ≥20% margin for surge and ripple.
R_DS(on) max	0.68 Ω @ V_GS = 10 V, I_D = 3.5 A - Enables <1.7 W conduction loss at 7 A continuous drain current.
Q_g	12.5 nC - Reduces gate driver power demand and allows use of low-cost 1-A peak drivers in 100–300 kHz converters.
C_oss	20 pF - Minimizes turn-on switching loss and improves light-load efficiency in LLC resonant converters.
E_AS	110 mJ - Sustains single-pulse unclamped inductive energy without failure, critical for PFC boost choke protection.
T_J max	150 °C - Permits operation in sealed enclosures with limited airflow when derated per R_thj-case = 5 °C/W.
V_ISO	2.5 kV RMS - Eliminates need for thermal pad isolation in TO-220FP heatsink mounting for Class I safety compliance.

Pinout & Package

TO-220FP package: insulated tab, vertical mounting, 3-pin through-hole configuration with integral heatsink interface. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Low-impedance input requiring ≤10 V drive; Zener-protected to ±25 V for ESD and transient immunity.
Pin 2 (D)	Drain (connected to metal tab)	High-voltage power node; electrically tied to heatsink-requires 2.5 kV isolation for safety-critical mounting.
Pin 3 (S)	Source return path	Reference node for gate drive and current sensing; low-inductance connection essential for stable switching.

Key Features

Feature	Design Value
Extremely low gate charge	Q_g = 12.5 nC enables <100 ns turn-on delay and reduces driver IC stress in high-frequency PFC.
Optimized C_oss profile	C_oss = 20 pF with flat voltage dependence up to 520 V ensures predictable zero-voltage switching (ZVS) timing.
100% avalanche tested	Each unit validated for E_AS ≥ 110 mJ at T_J = 25 °C-guarantees ruggedness in overcurrent fault conditions.
Zener-protected gate	Integrated gate-body Zener clamps V_GS to ±25 V, preventing oxide breakdown during layout-induced ringing.

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: 1 kW, 100–300 kHz interleaved PFC stage operating at 400 VDC bus.

IC Role / Device Role / Timing Role: Main switch in boost converter topology; handles full line-synchronized current pulses.

Use Value: Low R_DS(on) and C_oss reduce conduction + switching losses by 18% vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.2%.

Use Scenario: 300 W open-frame AC-DC adapter for PLC controllers with universal 85–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching control.

Use Value: 318 ns t_rr and soft-recovery diode enable reliable valley detection and reduce EMI peaks by 8 dBµV in conducted emissions.

Solar Microinverter DC-Link

EV Onboard Charger Stage

Use Scenario: 350 VDC link switching in dual-phase microinverter with SiC diode clamp.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer-isolated H-bridge.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents false turn-on during high-di/dt commutation, eliminating shoot-through risk.

Use Scenario: 6.6 kW single-phase OBC using two-phase interleaved PFC with 650 V bus.

IC Role / Device Role / Timing Role: Boost switch handling 12 A peak current at 120 kHz with forced-air cooling.

Use Value: R_thj-case = 5 °C/W allows 7 A continuous current at T_C = 100 °C-enabling compact heatsink design without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	12 A ID, 0.45 Ω RDS(on) max, same TO-220FP package, higher Qg (15.5 nC)	Higher current capability but increased switching loss in >200 kHz designs	Select when continuous current exceeds 7 A and thermal headroom permits higher conduction loss trade-off.
IPP65R099C7	650 V, 0.099 Ω RDS(on), TO-220 package (non-insulated tab), 22 nC Qg	Lower RDS(on) but requires external isolation; higher gate charge increases driver complexity	Prefer where board space allows isolated mounting and system prioritizes conduction loss over switching loss.

Compared with STP12N65M2 and IPP65R099C7, STFI11N65M2 offers optimal balance of gate drive simplicity (low Qg), intrinsic isolation (TO-220FP), and proven avalanche ruggedness-making it ideal for cost-sensitive, safety-critical 7 A PFC and SMPS designs.

Availability

STFI11N65M2 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and solar microinverters requiring stable component supply, long-term lifecycle support, and certified traceable sourcing.

Supply support for STFI11N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating above 300 VDC bus voltages.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The maximum continuous drain current (I_D) at T_C = 100 °C is 4.4 A, as specified in Table 1 of DS10136 Rev 3. This value accounts for thermal derating due to junction-to-case resistance (5 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires active cooling or pulse-width limitation.

Does STFI11N65M2 have an integrated body diode, and what are its recovery characteristics?

Yes, it features an integrated source-drain diode rated for 7 A continuous and 28 A pulsed current. At T_J = 25 °C, its reverse recovery time (t_rr) is 318 ns with 2.5 µC Q_rr under ISD = 7 A, di/dt = 100 A/µs, and VDD = 60 V. These values increase to 437 ns and 3.2 µC at T_J = 150 °C, confirming robust performance across operating temperature range.

Can STFI11N65M2 be used in avalanche mode, and what energy level is guaranteed?

Yes, every unit is 100% tested for single-pulse avalanche energy (E_AS) of 110 mJ at starting T_J = 25 °C, V_DD = 50 V, and I_D = I_AR = 1.5 A. Repetitive avalanche is not rated; the device is intended for controlled switching with appropriate snubbing, not sustained avalanche operation.

Is the TO-220FP package electrically insulated, and what is its isolation voltage rating?

Yes, the TO-220FP package provides electrical insulation between all three leads and the metal drain tab/heatsink interface. Its insulation withstand voltage is rated at 2.5 kV RMS for 1 second at T_C = 25 °C, enabling direct mounting to grounded heatsinks without additional insulating hardware in Class I safety-compliant designs.

STFI11N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 670mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 410 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI11N65M2 FAQ

1.How can I place an order for STFI11N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI11N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI11N65M2 reliable?

The price and inventory of STFI11N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI11N65M2 is usually 5 days.

3.What payment methods are accepted for STFI11N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI11N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI11N65M2?

STFI11N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI11N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI11N65M2?

For technical support, including STFI11N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI11N65M2 requirements.

6.How does Aetrix verify that STFI11N65M2 is sourced from the original manufacturer or authorized distributors?

All STFI11N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI11N65M2 meets industry standards.

7.What is the process for return or replacement of STFI11N65M2?

All STFI11N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFI11N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI11N65M2 part is unused and in its original packaging.

Return procedure for STFI11N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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