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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFU13N60M2

Name: STFU13N60M2
Brand: STMicroelectronics
SKU: STFU13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFU13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STFU13N60M2.pdf

Description:: MOSFET N-CH 600V TO-220FP

Quantity:: RFQ Add To RFQ list

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Inventory:9,022

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Product details

Overview

STFU13N60M2 from STMicroelectronics is an N-channel 600 V, 350 mΩ typ. (380 mΩ max.), 11 A MDmesh™ M2 Power MOSFET in TO-220FP ultra narrow leads package. It delivers extremely low gate charge (17 nC), optimized COSS profile (32 pF typ., 120 pF Coss_eq), and very low turn-off switching losses-enabling high-efficiency hard-switched PFC and SMPS topologies up to 100 kHz.

For engineers reviewing the STFU13N60M2 datasheet, STFU13N60M2 pinout, STFU13N60M2 application, or STFU13N60M2 equivalent, key selection criteria include its 150 °C max junction temperature, 2.5 kV RMS insulation rating, 100% avalanche tested ruggedness (EAS = 125 mJ), and Zener-protected gate-critical for industrial offline converters requiring robustness under overvoltage and unclamped inductive switching.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance nonlinearity. Its Coss_eq of 120 pF (0–480 V) enables predictable energy storage (Eoss ≈ 120 µJ at 400 V), supporting accurate snubberless design in flyback and LLC resonant converters.

The MOSFET integrates a fast-recovery body diode (trr = 297 ns @ 25 °C, 394 ns @ 150 °C; Qrr = 2.8–3.8 µC) with low forward voltage (VSD = 1.6 V @ ISD = 11 A), minimizing conduction loss in synchronous rectification and bidirectional topologies where reverse recovery stress must be controlled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC mains input with ≥20% safety margin in offline PSUs
R_DS(on) max	380 mΩ - ensures ≤4.6 W conduction loss at 11 A continuous drain current
Q_g	17 nC - reduces gate drive power and enables use of low-power drivers (e.g., STGAP2S)
C_{oss_eq}	120 pF - yields predictable turn-off energy (E_oss ≈ 120 µJ @ 400 V) for soft-snubber design
E_AS	125 mJ - guarantees single-pulse avalanche survivability in unclamped inductive switching (e.g., relay driving)
T_J max	150 °C - allows operation in sealed enclosures with limited airflow without derating below 7 A @ T_C = 100 °C
V_ISO	2.5 kV RMS - enables direct mounting on insulated heat sinks in Class I safety designs

Pinout & Package

TO-220FP ultra narrow leads package: isolated case (no internal metal tab connection), 3-pin vertical through-hole mount, 15.9 mm typical height, 30.5 mm typical length, and 5.2 mm typical width. Designed for compact PCB layouts and improved creepage/clearance in high-voltage applications.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	High-side switching node; electrically connected to isolated metal tab; requires 2.5 kV RMS isolation from heatsink
G (Pin 1)	Gate	Control terminal; Zener-protected (±25 V rating); low 6.6 Ω intrinsic resistance minimizes gate ringing
S (Pin 3)	Source	Power return path; referenced to driver ground; body diode anode for freewheeling conduction

Key Features

Feature	Design Value
MDmesh M2 technology	Combines strip layout and optimized drift region to achieve 350 mΩ typ. R_DS(on) at 600 V without sacrificing dv/dt ruggedness (50 V/ns)
Extremely low gate charge	Q_g = 17 nC enables <100 mW gate drive loss at 100 kHz with 12 V supply and 10 Ω driver
Excellent C_oss profile	C_{oss_eq} = 120 pF (0–480 V) provides linearized turn-off energy for reliable snubberless operation
Zener-protected gate	Integrated gate-body Zener clamps transients to ±25 V, eliminating need for external gate protection in most industrial environments
100% avalanche tested	Each unit validated for E_AS ≥ 125 mJ-ensures field reliability in overvoltage fault conditions without derating

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 1 kW active clamp forward converter operating at 85–265 V AC input with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 600 V DC link and 11 A peak current during PWM on-time.

Use Value: Low C_{oss_eq} and 17 nC Q_g reduce total switching loss by ~22% vs. legacy 600 V superjunction MOSFETs, enabling >94% efficiency at full load.

Use Scenario: 3 kW front-end PFC stage with interleaved boost topology in 48 V telecom system.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC bus and 15 A average current per phase.

Use Value: 50 V/ns dv/dt ruggedness and 297 ns trr prevent false triggering and diode-induced shoot-through during high-di/dt transitions.

Motor Drive Inverters

UPS Output Stages

Use Scenario: 5 kW three-phase inverter for HVAC compressors using 600 V DC bus and 10 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge, conducting freewheeling current via integrated body diode.

Use Value: VSD = 1.6 V @ 11 A and Qrr = 2.8 µC minimize conduction loss and reverse recovery stress during commutation.

Use Scenario: Online double-conversion UPS with 600 V DC link and battery backup, operating in line-interactive mode.

IC Role / Device Role / Timing Role: Inverter-stage switch delivering clean 230 V AC output with low THD under nonlinear loads.

Use Value: 150 °C T_J max and 5 °C/W R_thJC support sustained 7 A continuous current at 100 °C case temperature-critical for fanless UPS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60M2	Same MDmesh M2 process but TO-220 (non-isolated) package; R_DS(on) = 420 mΩ max; Q_g = 18 nC	Lacks 2.5 kV insulation; requires insulating pad; higher R_DS(on) increases conduction loss by ~10%	Select when cost sensitivity outweighs isolation requirement and board space permits larger thermal pad
IPP60R190C7	Infineon CoolMOS™ C7; TO-220FP; R_DS(on) = 190 mΩ max; Q_g = 22 nC; no integrated Zener	Lower R_DS(on) improves efficiency at high load; higher Q_g demands stronger gate driver; no built-in gate protection	Select for highest efficiency in thermally constrained designs where external gate protection is acceptable

Compared with STP12N60M2 and IPP60R190C7, STFU13N60M2 uniquely balances low switching loss (17 nC Q_g, 120 pF C_{oss_eq}), reinforced isolation (2.5 kV), and integrated gate protection-making it optimal for safety-critical, space-constrained industrial SMPS where reliability under transient stress is non-negotiable.

Availability

STFU13N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and UPS output stages requiring stable component supply across multi-year production cycles.

Supply support for STFU13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line-engineered specifically for high-efficiency, high-reliability offline power conversion systems operating at 600–650 V with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU13N60M2 supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10929 Rev 3. This derating reflects thermal limits imposed by its 5 °C/W R_thJC and 150 °C T_J max, ensuring safe operation without exceeding junction temperature in forced-air or heatsink-mounted configurations.

Does this MOSFET require external gate protection?

No. The STFU13N60M2 integrates a Zener diode between gate and source, rated for ±25 V, providing inherent protection against electrostatic discharge and gate overvoltage transients. External gate resistors (e.g., 10–47 Ω) are still recommended for ringing suppression, but discrete TVS or Zener clamps are unnecessary in standard industrial environments.

How does its body diode performance compare to standard silicon diodes?

The integrated body diode has V_SD = 1.6 V at 11 A and reverse recovery time trr = 297 ns (25 °C) / 394 ns (150 °C), with Q_rr = 2.8–3.8 µC. While slower than dedicated SiC Schottky diodes, its parameters are optimized for hard-switched freewheeling in 600 V topologies-reducing voltage spikes and EMI compared to standard FRDs, without requiring external anti-parallel diodes in many PFC and inverter designs.

Can STFU13N60M2 replace older STP13N60M2 in existing designs?

Yes-STFU13N60M2 is a direct drop-in replacement for STP13N60M2 in TO-220FP footprint designs. Both share identical pinout (D-G-S), voltage/current ratings, and MDmesh M2 technology. The STFU variant adds 2.5 kV isolation and tighter R_DS(on) spec (380 mΩ vs. 420 mΩ max), enabling immediate efficiency and safety upgrades without PCB or driver changes.

STFU13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STFU13N60M2 FAQ

1.How can I place an order for STFU13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFU13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFU13N60M2 reliable?

The price and inventory of STFU13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFU13N60M2 is usually 5 days.

3.What payment methods are accepted for STFU13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFU13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFU13N60M2?

STFU13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFU13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFU13N60M2?

For technical support, including STFU13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFU13N60M2 requirements.

6.How does Aetrix verify that STFU13N60M2 is sourced from the original manufacturer or authorized distributors?

All STFU13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFU13N60M2 meets industry standards.

7.What is the process for return or replacement of STFU13N60M2?

All STFU13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFU13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFU13N60M2 part is unused and in its original packaging.

Return procedure for STFU13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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