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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI6N62K3

Name: STI6N62K3
Brand: STMicroelectronics
SKU: STI6N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI6N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI6N62K3.pdf

Description:: MOSFET N-CH 620V 5.5A I2PAK

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Product details

Overview

STI6N62K3 from STMicroelectronics is an N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in I²PAKFP package, designed for high-voltage switching in offline SMPS, AC-DC adapters, and industrial motor drives. It features 100% avalanche tested ruggedness, extremely high dv/dt capability (12 V/ns), Zener-protected gate, and low intrinsic capacitance (Ciss = 875 pF, Coss = 100 pF).

For engineers reviewing the STI6N62K3 datasheet, STI6N62K3 pinout, STI6N62K3 application, or STI6N62K3 equivalent, this device is selected for high-reliability 620 V power conversion where low R_DS(on), fast switching (t_d(on) = 22 ns, t_f = 20 ns), and robust diode recovery (t_rr = 290 ns at T_j = 25 °C) are critical.

Technical Context

This MOSFET employs ST's optimized vertical SuperMESH3™ structure to achieve ultra-low on-resistance while maintaining high voltage blocking and enhanced safe operating area. Its built-in back-to-back Zener diodes provide gate-source ESD protection (2.5 kV HBM) and transient suppression without external components.

The device delivers superior dynamic performance via minimized gate charge (Q_g = 34 nC), low reverse transfer capacitance (C_rss = 17 pF), and improved source-drain diode recovery (Q_rr = 1.9 µC, I_RRM = 13.5 A), enabling efficient hard-switched topologies up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	620 V - Supports primary-side switching in universal-input (85–265 V_AC) offline converters with margin against line surges.
R_DS(on) max	1.2 Ω - Ensures <5.5 W conduction loss at 5.5 A DC, enabling thermally constrained designs with R_thj-case = 1.39 °C/W.
I_D (T_C = 25 °C)	5.5 A - Rated continuous drain current compatible with TO-220FP and I²PAKFP packages under heatsink-cooled conditions.
E_AS	140 mJ - Single-pulse avalanche energy rating confirms ruggedness for unclamped inductive switching in flyback and resonant topologies.
t_rr	290 ns - Fast reverse recovery time reduces switching losses and EMI in synchronous rectification and half-bridge configurations.
dv/dt	12 V/ns - High peak diode recovery voltage slope tolerance prevents spurious turn-on in high-noise industrial environments.
V_(BR)GSO	30 V - Gate-source Zener breakdown voltage enables direct 12–15 V gate drive without external clamping.

Pinout & Package

The STI6N62K3 is housed in an I²PAKFP (TO-281) package with isolated tab, rated for 2500 V_RMS insulation between leads and heat sink. The package provides low thermal resistance (R_thj-case = 1.39 °C/W) and surface-mount compatibility with through-hole mounting flexibility.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2, Tab)	Drain	High-voltage output node; electrically connected to metal tab for direct heatsinking and low-inductance layout.
G (Pin 1)	Gate	Control input; Zener-protected (±30 V rating) to withstand gate transients without external TVS.
S (Pin 3)	Source	Power return path; referenced to driver ground; supports Kelvin sensing in precision gate drive layouts.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 140 mJ at T_j = 25 °C, eliminating need for derating in inductive load switching.
Extremely high dv/dt capability	12 V/ns rating prevents false triggering during fast voltage transients in high-frequency PFC stages.
Minimized gate charge	Q_g = 34 nC enables efficient 100 kHz operation with standard 1-A gate drivers and low drive power dissipation.
Improved diode reverse recovery	t_rr = 290 ns and Q_rr = 1.9 µC reduce switching losses and ringing in secondary-side synchronous rectifiers.
Zener-protected gate	Integrated ±30 V gate-source Zener diodes eliminate external clamping components and simplify PCB layout.

Applications

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: Primary-side switch in 30–60 W universal-input flyback converters for industrial control panels.

IC Role / Device Role / Timing Role: High-voltage power switch handling 620 V blocking and 5.5 A peak current during 65 kHz PWM cycles.

Use Value: Low R_DS(on) (0.95 Ω typ.) minimizes conduction loss at full load; avalanche rating ensures reliability during output short-circuit events.

Use Scenario: Half-bridge leg in 1–2 kW variable-frequency drives for conveyor belt motors.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with t_f = 20 ns and dv/dt = 12 V/ns to support clean dead-time control.

Use Value: Optimized C_rss (17 pF) and Q_gd (22 nC) suppress Miller-induced shoot-through in high-dV/dt bus environments.

LED Street Lighting Drivers

UPS Inverter Stages

Use Scenario: Switching element in constant-current buck-boost LED drivers for outdoor luminaires operating at 230 V_AC mains.

IC Role / Device Role / Timing Role: High-efficiency power switch delivering 5.5 A at 100 kHz with minimal thermal rise due to R_thj-case = 1.39 °C/W.

Use Value: Integrated Zener protection eliminates gate-clamp diodes, reducing BOM count and improving long-term reliability in thermally cycled enclosures.

Use Scenario: Output stage switch in online double-conversion UPS systems requiring high-voltage DC bus switching (≥400 V).

IC Role / Device Role / Timing Role: Avalanche-rugged MOSFET handling repetitive unclamped inductive energy during battery backup transitions.

Use Value: EAS = 140 mJ and I_AR = 5.5 A enable robust operation without snubbers in transformer-isolated inverter legs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N62K3	Same die, TO-220 package; R_thj-case = 0.42 °C/W vs. 1.39 °C/W for STI6N62K3; higher PTOT = 90 W vs. 30 W.	Preferred for bolt-down heatsink applications requiring maximum power dissipation; unsuitable for space-constrained SMT layouts.	Select STP6N62K3 when thermal budget allows larger mechanical footprint and higher continuous power is needed.
FQP6N62	620 V, 1.2 Ω max R_DS(on), 5.4 A ID; no integrated Zener protection; C_iss = 950 pF; Q_g = 42 nC.	Lacks gate Zener and fails avalanche testing per datasheet; requires external gate clamp and careful SOA management.	Choose only if cost sensitivity outweighs reliability requirements and external protection circuitry is acceptable.

Compared with STP6N62K3, STI6N62K3 trades higher thermal resistance for compact I²PAKFP mounting and isolation; versus FQP6N62, it adds gate Zener protection and guaranteed avalanche ruggedness-critical for field-deployed industrial power supplies.

Availability

STI6N62K3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED street lighting drivers requiring stable component supply across multi-year production cycles.

Supply support for STI6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The SuperMESH3™ Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial and consumer offline power supplies, emphasizing ruggedness, low loss, and simplified gate drive.

FAQ

What is the maximum continuous drain current for STI6N62K3 at 100 °C case temperature?

The STI6N62K3 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects junction temperature limits (T_j ≤ 150 °C) and thermal resistance (R_thj-case = 1.39 °C/W) under real-world heatsink conditions.

Does STI6N62K3 require external gate protection components?

No. The device integrates back-to-back Zener diodes with V_(BR)GSO = 30 V, providing inherent gate-source ESD protection (2.5 kV HBM) and transient clamping. External gate resistors remain necessary for drive control, but discrete Zener clamps are redundant.

How does the I²PAKFP package compare to TO-220FP for thermal performance?

The I²PAKFP package used by STI6N62K3 has R_thj-case = 1.39 °C/W, while the TO-220FP variant (STF6N62K3) has R_thj-case = 4.17 °C/W. This 3× lower thermal resistance enables higher power density in space-constrained designs, though both share identical 2500 V_RMS isolation rating.

Can STI6N62K3 be used in synchronous rectification applications?

Yes-the device's optimized body diode exhibits t_rr = 290 ns and Q_rr = 1.9 µC at 25 °C, enabling use as a synchronous rectifier in LLC and active-clamp forward converters. However, its R_DS(on) is not optimized for low-voltage secondary-side conduction, so it is best applied on the primary side or in high-V_DS rectification roles.

STI6N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 875 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI6N62K3 FAQ

1.How can I place an order for STI6N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI6N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI6N62K3 reliable?

The price and inventory of STI6N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI6N62K3 is usually 5 days.

3.What payment methods are accepted for STI6N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI6N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI6N62K3?

STI6N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI6N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI6N62K3?

For technical support, including STI6N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI6N62K3 requirements.

6.How does Aetrix verify that STI6N62K3 is sourced from the original manufacturer or authorized distributors?

All STI6N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI6N62K3 meets industry standards.

7.What is the process for return or replacement of STI6N62K3?

All STI6N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STI6N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI6N62K3 part is unused and in its original packaging.

Return procedure for STI6N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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