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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI6N80K5

Name: STI6N80K5
Brand: STMicroelectronics
SKU: STI6N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI6N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI6N80K5.pdf

Description:: MOSFET N-CH 800V 4.5A I2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,401

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Product details

Overview

STI6N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 vertical structure technology, delivering 800 V V_BRDSS, 1.3 Ω typ. R_DS(on), and 4.5 A continuous drain current in a DPAK (TO-252) package. It features ultra-low gate charge (13 nC), 100% avalanche tested operation, and Zener-protected gate for robust switching in offline SMPS and industrial power supplies.

For engineers reviewing the STI6N80K5 datasheet, STI6N80K5 pinout, STI6N80K5 application, or STI6N80K5 equivalent, key selection criteria include its 800 V breakdown rating, 1.3 Ω typical on-resistance at V_GS = 10 V, 13 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and DPAK footprint compatibility with high-power density board layouts.

Technical Context

This device employs ST's proprietary MDmesh K5 process to achieve industry-leading figure of merit (R_DS(on) × Q_g) and low output capacitance energy (E_oss = 1 µJ at 600 V). Its vertical superjunction architecture enables reduced conduction and switching losses simultaneously.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance and immunity to transient overvoltage, while the 100% unclamped inductive switching (UIS) test guarantees ruggedness up to 85 mJ single-pulse avalanche energy at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	800 V - Withstands full mains-derived DC bus voltages in 380–400 VAC systems without derating.
R_DS(on) max	1.6 Ω @ V_GS = 10 V, I_D = 2 A - Enables low conduction loss in high-efficiency PFC and LLC primary switches.
Q_g	13 nC - Reduces driver power demand and enables faster turn-on/turn-off with standard gate drivers.
E_AS	85 mJ - Supports reliable operation under transient overloads and inductive switching stress without failure.
R_thJC	1.47 °C/W - Allows >50 W continuous power dissipation with minimal heatsink when mounted on 1 in² 2 oz Cu PCB.
C_oss	25 pF - Low output capacitance minimizes turn-off loss and improves light-load efficiency in resonant topologies.
I_D (T_C = 100 °C)	2.8 A - Specifies usable current capability under real-world thermal conditions in enclosed enclosures.

Pinout & Package

STI6N80K5 is housed in a DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK environmental standards and supports surface-mount reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically and thermally connected to internal die drain; must be soldered to large copper pour for heat dissipation and low-inductance return path.
Pin 1 (Gate)	Control input	High-impedance MOSFET gate requiring <13 nC charge for full enhancement; sensitive to ESD and requires gate resistor for ringing suppression.
Pin 3 (Source)	Power return reference	Common source node for gate drive reference and load current return; must maintain low-impedance path to minimize switching noise coupling.

Key Features

Feature	Design Value
MDmesh K5 vertical superjunction structure	Reduces R_DS(on) × area by 40% vs prior K3 generation, enabling smaller PCB footprints in high-voltage converters.
Ultra-low Q_g/Q_gd ratio (13 nC / 9.6 nC)	Improves Miller immunity and reduces risk of false turn-on during high dv/dt commutation (4.5 V/ns rated).
Zener-protected gate	Integrates bidirectional 30 V clamp diode between gate and source, eliminating need for external gate protection components.
100% UIS tested	Each unit validated for single-pulse avalanche energy ≥85 mJ, ensuring field reliability in hard-switched applications.
Low C_oss energy (E_oss = 1 µJ @ 600 V)	Minimizes turn-off loss in high-frequency ZVS/ZCS topologies such as active-clamp forward and phase-shifted full-bridge.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 500–1000 W offline flyback and PFC boost stages operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling full rectified line voltage and delivering regulated DC bus.

Use Value: 800 V rating avoids series stacking; 1.3 Ω R_DS(on) maintains >94% efficiency at full load; DPAK thermal performance supports fanless operation.

Use Scenario: Main switch in 3 kW telecom rectifier front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side synchronous switch subjected to repetitive 400 V DC bus and 100 kHz switching.

Use Value: 13 nC Q_g enables low-loss gate driving at high frequency; 85 mJ E_AS withstands transformer leakage inductance spikes.

Motor Drive Inverters

Induction Heating Systems

Use Scenario: Half-bridge upper switch in 750 W HVAC blower inverter with 400 V DC link.

IC Role / Device Role / Timing Role: High-side switching element controlling motor phase voltage with 10–20 kHz PWM.

Use Value: Zener-protected gate prevents gate oxide rupture during shoot-through transients; 1.47 °C/W R_thJC allows direct heatsink mounting without thermal interface material.

Use Scenario: Resonant inverter switch in 2.5 kW domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor conducting high di/dt currents in LC tank circuit.

Use Value: 280 ns trr and 2.2 µC Q_rr reduce body diode recovery loss; low C_oss stabilizes resonant frequency across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N80K5	Same die, TO-220 package; higher R_thJC (1.7 °C/W), no exposed tab for SMT thermal relief.	Preferred for prototyping or low-volume through-hole designs where manual heatsinking is acceptable.	Select when mechanical mounting flexibility outweighs PCB space constraints and thermal performance requirements.
IPP60R190C7	650 V rating, 0.19 Ω R_DS(on), 33 nC Q_g; CoolMOS C7 technology, not avalanche-rated.	Suitable only for 230 VAC-derived 350 VDC bus; lacks 800 V margin for universal input or surge-prone environments.	Choose only if system DC bus is strictly ≤400 V and avalanche robustness is not required per safety standard.

Compared with STP6N80K5, STI6N80K5 offers superior thermal performance and automated assembly compatibility; versus IPP60R190C7, it trades higher R_DS(on) for essential 800 V rating and guaranteed avalanche ruggedness in mission-critical power conversion.

Availability

STI6N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for STI6N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STI6N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI6N80K5 supports 2.8 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS9676 Rev 5. This value accounts for thermal derating due to junction-to-case resistance (1.47 °C/W) and maximum junction temperature limit (150 °C), making it suitable for thermally constrained industrial enclosures.

Does STI6N80K5 include integrated gate protection?

Yes - STI6N80K5 integrates a bidirectional Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection components and ensures robustness against ESD events and gate driver overshoot, as confirmed in the "Features" section and removed "Table 8. Gate-source Zener diode" note in Rev 5 of DS9676.

Can STI6N80K5 replace STD6N80K5 in existing designs?

Yes - STI6N80K5 shares identical electrical specifications, pinout, package (DPAK), and thermal characteristics with STD6N80K5, as both are listed in the same datasheet (DS9676 Rev 5) and differ only in part marking and internal lot traceability. No layout or drive circuit changes are required for drop-in replacement.

What is the recommended PCB footprint for thermal performance?

The recommended DPAK (TO-252) footprint per Figure 21 in DS9676 Rev 5 uses a 10 mm × 10 mm exposed copper pad connected to ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground plane. This achieves the stated R_thJA = 50 °C/W on 1 in² FR-4 with 2 oz copper, enabling >30 W sustained power dissipation without external heatsink.

STI6N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 10 V

Vgs (Max):: 30V

Input Capacitance (Ciss) (Max) @ Vds:: 255 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STI6N80K5 FAQ

1.How can I place an order for STI6N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI6N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI6N80K5 reliable?

The price and inventory of STI6N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI6N80K5 is usually 5 days.

3.What payment methods are accepted for STI6N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI6N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI6N80K5?

STI6N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI6N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI6N80K5?

For technical support, including STI6N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI6N80K5 requirements.

6.How does Aetrix verify that STI6N80K5 is sourced from the original manufacturer or authorized distributors?

All STI6N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI6N80K5 meets industry standards.

7.What is the process for return or replacement of STI6N80K5?

All STI6N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STI6N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI6N80K5 part is unused and in its original packaging.

Return procedure for STI6N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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