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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI90N4F3

Name: STI90N4F3
Brand: STMicroelectronics
SKU: STI90N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI90N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI90N4F3.pdf

Description:: MOSFET N-CH 40V 80A I2PAK

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Product details

Overview

STI90N4F3 from STMicroelectronics is an N-channel 40 V, 6.2 mΩ (max), 80 A (TC = 25 °C) STripFET™ III Power MOSFET in I²PAK (TO-262) package, designed for high-current switching in DC-DC converters and motor drives where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the STI90N4F3 datasheet, STI90N4F3 pinout, STI90N4F3 application, or STI90N4F3 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 320 A pulsed drain current rating, 400 mJ single-pulse avalanche energy, and thermal resistance of 1.36 °C/W (junction-to-case).

Technical Context

This MOSFET employs STripFET™ III technology optimized for reduced on-resistance and fast switching with controlled dv/dt (8 V/ns max) to minimize EMI in hard-switched topologies. Its standard threshold voltage (2–4 V) ensures compatibility with 5 V and 3.3 V logic-level gate drivers without level-shifting.

The device integrates a robust body diode with 45 ns reverse recovery time and 2.8 A peak reverse recovery current under 100 A/µs di/dt, enabling reliable operation in synchronous rectification and freewheeling paths of buck and half-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; suitable for 24 V and 36 V nominal bus systems with margin.
R_DS(on) max	6.2 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
I_D cont	80 A @ T_C = 25 °C - Supports high-current loads such as BLDC motor phases or high-power LED drivers.
E_AS	400 mJ - Withstands unclamped inductive switching events without failure, enhancing system reliability.
Q_g	54 nC - Defines total gate charge required for full turn-on; determines driver power and switching speed trade-off.
T_j max	175 °C - Allows operation in high-ambient industrial environments with appropriate thermal design.
dv/dt	8 V/ns - Limits parasitic turn-on risk during high-speed switching in noisy power stages.

Pinout & Package

I²PAK (TO-262) package with isolated mounting tab (drain-connected), thermally enhanced plastic housing, and RoHS-compliant ECOPACK® construction. Mounting tab enables direct heatsink attachment for optimal thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to PCB ground plane; referenced for gate drive control.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <200 nA leakage; driven by external gate driver IC or microcontroller.
3 (Drain)	Main power output terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
Standard threshold drive	V_GS(th) = 2–4 V enables direct interface with 3.3 V/5 V logic without gate driver boost circuitry.
100% avalanche tested	Each unit validated for 400 mJ single-pulse avalanche energy, ensuring field reliability in inductive switching.
STripFET™ III process	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior generation, improving efficiency in 100–500 kHz SMPS.
Low C_oss & C_rss	580 pF output capacitance and 40 pF reverse transfer capacitance minimize switching losses and improve EMI behavior.

Applications

Motor Drive Inverter

DC-DC Synchronous Rectifier

Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 500 W fan or pump.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 80 A peak phase current with 45 ns diode recovery.

Use Value: 6.2 mΩ R_DS(on) limits conduction loss to ≤0.4 W per FET at 40 A, enabling compact thermal design.

Use Scenario: Secondary-side switch in 48 V to 12 V isolated LLC resonant converter for telecom power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency above 200 kHz.

Use Value: Body diode's 1.5 V forward voltage and 45 ns trr allow clean commutation with minimal reverse recovery loss.

Industrial Power Supply

Automotive DC Load Switch

Use Scenario: Primary-side switch in 3 kW industrial AC-DC front-end using interleaved PFC stage.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch operating at 65 kHz with 320 A pulsed ID capability.

Use Value: 110 W power dissipation rating and 1.36 °C/W R_th(j-c) support forced-air-cooled designs without liquid cooling.

Use Scenario: High-side load switch controlling 12 V battery-fed HVAC actuator in commercial vehicle.

IC Role / Device Role / Timing Role: Protected power switch with integrated avalanche ruggedness for inductive load dump transients.

Use Value: 400 mJ E_AS withstands ISO 7637-2 pulse 5a (120 V/100 ms) without external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8.0 mΩ @ 10 V; 110 A I_D; TO-220 package; no avalanche rating specified	Higher conduction loss; lacks guaranteed avalanche performance; lower current density per mm²	Acceptable only if thermal margin exists and unclamped inductive energy is externally limited.
IXFH80N40P	R_DS(on) = 5.5 mΩ @ 10 V; 80 A I_D; TO-247 package; 350 mJ E_AS	Lower R_DS(on) but larger footprint; slightly lower avalanche energy; higher gate charge (72 nC)	Preferred when lowest conduction loss is prioritized and board space allows TO-247 mounting.

Compared with IRF3205PbF and IXFH80N40P, STI90N4F3 delivers best-in-class R_DS(on)/package density in I²PAK, guaranteed avalanche ruggedness, and optimized gate charge for medium-frequency switching-making it ideal for space-constrained industrial inverters.

Availability

STI90N4F3 is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous rectifiers, industrial power supplies, and automotive DC load switches requiring stable component supply and long-term production continuity.

Supply support for STI90N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities.

STI90N4F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor controls, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current for STI90N4F3 at 100 °C case temperature?

The maximum continuous drain current is 65 A at T_C = 100 °C, derated from 80 A at 25 °C using the specified 0.73 W/°C thermal derating factor and 110 W total dissipation limit. This reflects real-world thermal constraints in enclosed enclosures with limited airflow.

Does STI90N4F3 require a gate resistor for safe operation?

Yes-a gate resistor (typically 4.7 Ω) is required to control dV/dt and prevent oscillation during switching, as confirmed by test conditions in Table 6 (td(on)/td(off) measurements). Omitting it risks shoot-through in bridge configurations and excessive EMI due to uncontrolled edge rates.

Can STI90N4F3 be used in avalanche mode repeatedly?

No-while 100% avalanche tested for single-pulse events (E_AS = 400 mJ), the datasheet does not specify repetitive avalanche ratings. Repeated avalanche operation may cause cumulative junction degradation and is not recommended for continuous design use.

Is the mounting tab of the I²PAK package electrically isolated?

No-the metal tab is internally connected to the drain terminal, as shown in Figure 1 (internal schematic) and confirmed by mechanical drawings showing tab continuity with pin 3 (Drain). Electrical isolation from heatsink requires insulating washer or pad rated for ≥40 V working voltage and thermal conductivity ≥1 W/m·K.

STI90N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI90N4F3 FAQ

1.How can I place an order for STI90N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI90N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI90N4F3 reliable?

The price and inventory of STI90N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI90N4F3 is usually 5 days.

3.What payment methods are accepted for STI90N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI90N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI90N4F3?

STI90N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI90N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI90N4F3?

For technical support, including STI90N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI90N4F3 requirements.

6.How does Aetrix verify that STI90N4F3 is sourced from the original manufacturer or authorized distributors?

All STI90N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI90N4F3 meets industry standards.

7.What is the process for return or replacement of STI90N4F3?

All STI90N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STI90N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI90N4F3 part is unused and in its original packaging.

Return procedure for STI90N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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