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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL16N1VH5

Name: STL16N1VH5
Brand: STMicroelectronics
SKU: STL16N1VH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL16N1VH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL16N1VH5.pdf

Description:: MOSFET N-CH 12V 16A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL16N1VH5 from STMicroelectronics is an N-channel PowerFLAT™ (3.3 × 3.3) MOSFET optimized for low-voltage switching, featuring 12 V V_DS, 0.0022 Ω R_DS(on) @ 4.5 V, 16 A continuous drain current at T_C = 25 °C, and gate drive compatibility down to 2.5 V. It targets high-efficiency DC-DC converters, load switches, and battery protection circuits in space-constrained portable electronics.

For engineers reviewing the STL16N1VH5 datasheet, STL16N1VH5 pinout, STL16N1VH5 application, or STL16N1VH5 equivalent, key selection criteria include its ultra-low on-resistance at low gate voltage, 1 mm max profile, junction-to-PCB thermal resistance of 63.5 °C/W (steady-state), and avalanche energy rating of 350 mJ - critical for robustness in inductive switching.

Technical Context

This STripFET™ V device uses a trench-gate process to minimize R_DS(on) × Q_g figure-of-merit while enabling direct logic-level drive from 2.5 V microcontrollers. Its PowerFLAT™ (3.3 × 3.3) package integrates exposed drain pads for enhanced thermal conduction to PCB copper.

The MOSFET supports unclamped inductive switching with 11 A non-repetitive avalanche current and exhibits fast switching times: t_r = 31.6 ns and t_f = 16 ns under 4.7 Ω gate resistance, making it suitable for high-frequency synchronous rectification and PWM-controlled power paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum drain-source blocking voltage for 3.3–5 V rail applications.
R_DS(on) @ V_GS = 4.5 V	0.0022 Ω - Enables <17 mW conduction loss at 16 A, reducing thermal stress in compact layouts.
Q_g	26.5 nC - Low total gate charge minimizes driver power and enables efficient 1–2 MHz switching.
T_J range	−55 to +150 °C - Supports operation in automotive cabin and industrial ambient environments.
R_thj-pcb (steady-state)	63.5 °C/W - Defines thermal limit when mounted on standard FR-4 (1 in², 2 oz Cu); requires adequate copper pour.
E_AS	350 mJ - Single-pulse avalanche energy ensures reliability during inductive turn-off transients without external snubbers.

Pinout & Package

STL16N1VH5 uses the PowerFLAT™ (3.3 × 3.3) surface-mount package with 1 mm maximum height and exposed drain thermal pad. The package features four drain terminals (D), three source terminals (S), and one gate terminal (G), arranged in a single-row configuration visible in bottom view.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Bottom)	Drain (D)	Four parallel drain connections reduce bond wire inductance and improve current sharing in high-di/dt switching.
5, 6, 7	Source (S)	Three dedicated source terminals lower source loop inductance and enhance stability in high-speed gate drive.
8	Gate (G)	Single gate input with 1.5 Ω gate input resistance - compatible with standard CMOS drivers without series damping.

Key Features

Feature	Design Value
Optimized for 2.5 V drive	Guaranteed R_DS(on) ≤ 0.0032 Ω at V_GS = 2.5 V - eliminates need for level-shifting in 3.3 V or Li-ion battery systems.
Very low profile	Max height 1.0 mm - enables stacking in ultra-thin consumer devices and wearable power modules.
Low thermal resistance	R_thj-pcb = 42.8 °C/W (t < 10 sec) - supports short-duration peak loads up to 64 A without thermal runaway.
Low gate charge	Q_gd = 4.8 nC - reduces Miller-induced switching delay and improves noise immunity in high-dV/dt environments.

Applications

Battery Protection Circuit

USB-C Load Switch

Use Scenario: Reverse-current and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role: High-side N-channel switch controlled by protection IC to disconnect cell during fault conditions.

Use Value: 0.0022 Ω R_DS(on) limits voltage drop to <35 mV at 16 A, preserving battery runtime and minimizing heat generation in sealed enclosures.

Use Scenario: Hot-swap and short-circuit protection for USB-C power delivery ports.

IC Role / Device Role: Low-side switch enabling rapid turn-off (<50 ns fall time) during overcurrent events detected by PD controller.

Use Value: 350 mJ avalanche rating absorbs inductive kickback from cable capacitance discharge, preventing destructive breakdown during plug insertion.

DC-DC Synchronous Rectifier

Motor Driver Half-Bridge

Use Scenario: Secondary-side rectification in 5 V/3.3 V buck converters for FPGA or SoC power rails.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction losses at high duty cycles.

Use Value: 26.5 nC Q_g allows clean 1 MHz switching with minimal gate driver dissipation, improving converter efficiency by >2% at 10 A output.

Use Scenario: Low-side switch in 12 V brushed DC motor H-bridge for robotics and portable tools.

IC Role / Device Role: Fast-switching N-MOSFET handling bidirectional current up to 16 A continuous with integrated body diode recovery.

Use Value: trr = 49 ns and Q_rr = 54 nC minimize reverse recovery losses during PWM commutation, reducing MOSFET heating and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	R_DS(on) = 1.4 mΩ @ 4.5 V; larger PowerSO-8 package (4.9 × 6.0 mm); higher Q_g = 32 nC	Better R_DS(on) but 2.5× larger footprint and 21% higher gate drive power - suited for thermally relaxed designs prioritizing conduction loss.	Select when board area permits and thermal margin exceeds 10 °C; avoid if height <1.1 mm or gate drive current <1 A peak is required.
Vishay Si7157DP	R_DS(on) = 2.5 mΩ @ 4.5 V; same PowerFLAT™ (3.3 × 3.3); Q_g = 22 nC; no 2.5 V drive spec	Lower gate charge improves switching efficiency but lacks guaranteed 2.5 V turn-on - requires ≥3.3 V logic interface.	Prefer for 3.3 V systems where gate drive voltage is stable; not recommended for direct connection to 2.5 V microcontroller GPIOs.

Compared with BSC014N04LS and Si7157DP, STL16N1VH5 uniquely balances ultra-low R_DS(on), 2.5 V drive capability, and minimal 3.3 mm × 3.3 mm footprint - making it optimal for space- and voltage-constrained battery-powered applications where gate drive headroom is limited.

Availability

STL16N1VH5 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C load switches, DC-DC synchronous rectifiers, and motor driver half-bridges requiring stable component supply and long-term design-in support.

Supply support for STL16N1VH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and analog ICs for industrial, automotive, and consumer markets.

STL16N1VH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in portable and space-constrained power systems - emphasizing die-to-footprint optimization and logic-level drivability.

FAQ

Is STL16N1VH5 suitable for automotive applications?

No - STL16N1VH5 is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature cycling validation, or extended lifetime testing. ST explicitly states non-automotive grade parts are used at user's own risk in automotive contexts. For automotive use, consider ST's AEC-Q101-qualified PowerFLAT™ variants like STL16N1VH5-1.

What is the maximum safe operating frequency for STL16N1VH5?

Based on measured switching times (t_r = 31.6 ns, t_f = 16 ns) and gate charge (Q_g = 26.5 nC), STL16N1VH5 supports reliable operation up to 2 MHz in hard-switched topologies with appropriate gate driver strength (≥1 A peak) and PCB layout minimizing parasitic inductance.

Does STL16N1VH5 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is specified in the datasheet test circuit for switching time characterization. This value damps gate oscillation and controls di/dt during turn-on; omitting it risks ringing, shoot-through in half-bridges, and accelerated gate oxide wear under repeated high-frequency operation.

Can STL16N1VH5 replace a P-channel MOSFET in high-side switching?

No - STL16N1VH5 is an N-channel device requiring gate voltage above source potential for conduction. In high-side configurations, it needs a charge pump or bootstrap circuit to achieve V_GS ≥ 2.5 V. Direct replacement of P-channel MOSFETs (e.g., for simple on/off control) is not feasible without additional gate drive complexity.

STL16N1VH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 26.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2085 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (3.3x3.3)

STL16N1VH5 FAQ

1.How can I place an order for STL16N1VH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL16N1VH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL16N1VH5 reliable?

The price and inventory of STL16N1VH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL16N1VH5 is usually 5 days.

3.What payment methods are accepted for STL16N1VH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL16N1VH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL16N1VH5?

STL16N1VH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL16N1VH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL16N1VH5?

For technical support, including STL16N1VH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL16N1VH5 requirements.

6.How does Aetrix verify that STL16N1VH5 is sourced from the original manufacturer or authorized distributors?

All STL16N1VH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL16N1VH5 meets industry standards.

7.What is the process for return or replacement of STL16N1VH5?

All STL16N1VH5 units undergo pre-shipment inspection (PSI). If there is an issue with STL16N1VH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL16N1VH5 part is unused and in its original packaging.

Return procedure for STL16N1VH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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