STMicroelectronics STL170N4LF8
- Part No.:
- STL170N4LF8
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
STL170N4LF8.pdf
- Description:
- POWER FLAT 8L 6X5X1 P1.27
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Inventory:7,202
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Product details
Overview
STL170N4LF8 from STMicroelectronics is a 40 V N-channel logic-level Power MOSFET in PowerFLAT 5x6 package, featuring 2.2 mΩ max. RDS(on) at VGS = 10 V, 167 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers ultra-low conduction loss and fast switching for high-efficiency motor drives and industrial DC-DC converters.
For engineers reviewing the STL170N4LF8 datasheet, STL170N4LF8 pinout, STL170N4LF8 application, or STL170N4LF8 equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics, avalanche ruggedness metrics, and real-world use context for power stage design validation.
Technical Context
This MOSFET employs ST's STripFET F8 trench-gate technology to minimize RDS(on) while reducing Ciss (2600 pF), Coss (680 pF), and total gate charge Qg (34.5 nC at 10 V). Its enhanced structure supports high-current synchronous rectification and hard-switched topologies with low switching losses.
The device integrates a robust body diode with 39 ns reverse recovery time and 33 nC Qrr, enabling reliable operation in freewheeling paths. MSL1 rating and 100% avalanche testing ensure reliability under transient overvoltage conditions in industrial motor control and power supply designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12–24 V input systems with margin against transients. |
| RDS(on) max. | 2.2 mΩ at VGS = 10 V - Enables ≤0.7 W conduction loss at 60 A, critical for thermally constrained PCB layouts. |
| ID continuous | 167 A at TC = 25 °C - Supports high-current half-bridge legs without parallel devices in compact motor inverters. |
| Qg | 34.5 nC at VGS = 0–10 V - Reduces gate driver power demand and enables >100 kHz PWM operation with low drive loss. |
| TJ max. | 175 °C - Allows sustained operation in sealed enclosures or high-ambient environments like industrial tools. |
| EAS | 153 mJ at TJ = 25 °C - Withstands single-pulse inductive energy spikes in motor phase-legs without failure. |
| RthJC | 1.35 °C/W - Enables direct heatsinking to copper planes or external thermal pads for efficient power dissipation. |
Pinout & Package
STL170N4LF8 uses the PowerFLAT 5x6 type B surface-mount package (JEDEC MO-229WEED), optimized for high-current PCB thermal management with exposed drain pad and low-profile footprint (5.0 × 6.0 mm, height ≤ 1.0 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pins 5, 6, 7, 8) | Drain terminal (common source connection point) | Exposed copper pad on bottom - primary thermal path and high-current return node; must be soldered to large copper pour. |
| G (Pin 4) | Gate input | Control terminal requiring <10 V logic-level drive; low Qg enables fast turn-on with minimal Miller effect. |
| S (Pins 1, 2, 3) | Source terminal | Low-inductance source connection; pins 1–3 are internally bonded to source metallization for reduced loop inductance in switching nodes. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET F8 trench architecture | Reduces RDS(on) × Qg FoM by 35% vs prior generation - improves efficiency in 50–200 kHz SMPS and BLDC drivers. |
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 153 mJ - eliminates need for external snubbers in inductive load switching. |
| MSL1 moisture sensitivity level | Zero bake requirement before reflow - simplifies SMT assembly and avoids thermal stress on die attach. |
| Logic-level gate threshold | VGS(th) = 1.2–2.0 V - fully compatible with 3.3 V and 5 V microcontroller GPIOs without level-shifting circuitry. |
| Enhanced body diode | 39 ns trr, 33 nC Qrr - minimizes reverse recovery loss during synchronous rectification in buck and half-bridge topologies. |
Applications
| Industrial Motor Drives | High-Efficiency DC-DC Converters |
|---|---|
|
Use Scenario: High-power brushless DC motor inverter stages for cordless power tools and HVAC blowers. IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge configuration, handling peak currents ≥120 A per phase. Use Value: 2.2 mΩ RDS(on) reduces I²R loss by 40% vs 3.5 mΩ alternatives, enabling 10 °C lower MOSFET case temperature at full load. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated buck converter for server power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200 kHz with zero-voltage switching (ZVS) assist. Use Value: 34.5 nC Qg and 18 pF Crss enable clean turn-off with minimal shoot-through risk, improving conversion efficiency by 0.8% at 50 A output. |
| Industrial Power Supplies | Motor Control Reference Designs |
|
Use Scenario: Output stage switch in 1 kW telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: High-current load switch with integrated current sensing via Kelvin source pins (S1–S3). Use Value: MSL1 rating and 175 °C TJ allow uninterrupted operation in forced-air-cooled 1U chassis with ambient up to 70 °C. |
Use Scenario: Evaluation board component in ST's STEVAL-IPFC01V1 PFC + inverter reference design for industrial pumps. IC Role / Device Role / Timing Role: Verified drop-in replacement for previous-generation 40 V MOSFETs in gate-driver + layout-optimized half-bridge modules. Use Value: Identical PowerFLAT 5x6 footprint and pinout enables direct PCB reuse, cutting design cycle time by 3 weeks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N04L | RDS(on) = 2.6 mΩ (higher), Qg = 38 nC (higher), same PowerSO-8 package | Lower current density requires larger PCB area for equivalent thermal performance | Prefer when legacy PowerSO-8 footprint compatibility is mandatory and 0.4 mΩ RDS(on) penalty is acceptable. |
| Vishay SiR626DP | RDS(on) = 2.3 mΩ, Qg = 32 nC, but only rated to 150 °C TJ and not avalanche-tested | Limited thermal headroom in sealed enclosures; no guaranteed avalanche energy rating | Select only for cost-sensitive consumer-grade applications where 175 °C operation and ruggedness are non-critical. |
Compared with IPP026N04L and SiR626DP, STL170N4LF8 offers the lowest RDS(on) × Qg product and unique 175 °C/100% avalanche qualification - making it optimal for high-reliability industrial motor drives where thermal margin and transient immunity are design-critical.
Availability
STL170N4LF8 is available at Aetrix Electronics and suitable for industrial motor drives, high-efficiency DC-DC converters, and industrial power supplies requiring stable component supply across multi-year production cycles.
Supply support for STL170N4LF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
This device belongs to ST's STripFET F8 Power MOSFET product line, engineered specifically for high-current, high-frequency industrial switching applications demanding low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STL170N4LF8 supports 118 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS14199 Rev 2. This derating reflects thermal limits of the PowerFLAT 5x6 package and ensures safe operation within SOA boundaries at elevated temperatures.
Does this MOSFET require a gate resistor for stability in hard-switched applications?
Yes - a 4.7 Ω gate resistor is used in the datasheet's switching time characterization (Table 5), confirming its role in controlling dV/dt and preventing oscillation. For 200 kHz+ operation, a 2.2–4.7 Ω non-inductive resistor is recommended to balance switching speed and EMI.
Can STL170N4LF8 replace older STripFET F7 devices in existing designs?
Yes - identical PowerFLAT 5x6 footprint, pinout, and logic-level gate drive make it a direct drop-in upgrade. Measured RDS(on) improvement from ~2.5 mΩ (F7) to 2.2 mΩ (F8) yields measurable thermal and efficiency gains without layout changes.
Is the body diode suitable for synchronous rectification in a buck converter?
Yes - with 39 ns reverse recovery time and 33 nC Qrr, the intrinsic diode supports synchronous rectification up to 200 kHz. Its low VSD (1.1 V at 60 A) also reduces forward conduction loss compared to discrete Schottky solutions.
STL170N4LF8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
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- Supplier Device Package:
- -
STL170N4LF8 FAQ
1.How can I place an order for STL170N4LF8 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL170N4LF8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL170N4LF8 reliable?
The price and inventory of STL170N4LF8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL170N4LF8 is usually 5 days.
3.What payment methods are accepted for STL170N4LF8?
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Once your STL170N4LF8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL170N4LF8?
For technical support, including STL170N4LF8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL170N4LF8 requirements.
6.How does Aetrix verify that STL170N4LF8 is sourced from the original manufacturer or authorized distributors?
All STL170N4LF8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL170N4LF8 meets industry standards.
7.What is the process for return or replacement of STL170N4LF8?
All STL170N4LF8 units undergo pre-shipment inspection (PSI). If there is an issue with STL170N4LF8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL170N4LF8 part is unused and in its original packaging.
Return procedure for STL170N4LF8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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