STMicroelectronics STL25N15F4
- Part No.:
- STL25N15F4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL25N15F4.pdf
- Description:
- MOSFET N-CH 150V 25A POWERFLAT
- Quantity:
- Payment:

- Shipping:

Inventory:9,366
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STL25N15F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerFLAT™ (5×6) package, rated for 150 V drain-source voltage, 0.057 Ω typical RDS(on) at VGS = 10 V and ID = 3 A, 6 A continuous drain current at TC = 25 °C, and 100% avalanche-rated for robust switching in DC-DC converters and motor control stages.
For engineers reviewing the STL25N15F4 datasheet, STL25N15F4 pinout, STL25N15F4 application, or STL25N15F4 equivalent, this device is selected for high-efficiency low-side switching where low gate charge (48 nC), fast switching times (tr = 13.5 ns, tf = 11.4 ns), and thermally efficient PCB-mounting via exposed drain pad are critical design requirements.
Technical Context
This MOSFET employs ST's DeepGATE™ gate structure and STripFET™ process to minimize RDS(on) while maintaining low Qg (48 nC) and Qgd (13.7 nC), enabling high-frequency operation up to several hundred kHz. Its 1.56 °C/W junction-to-case thermal resistance supports direct heatsinking through the exposed drain pad.
The device features a built-in source-drain diode with 85 ns reverse recovery time and 351 nC reverse recovery charge at 150 °C, suitable for synchronous rectification and inductive load switching. Avalanche energy rating of 125 mJ ensures ruggedness under unclamped inductive turn-off conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage before breakdown; enables use in 100 V bus systems with margin. |
| RDS(on) max | 0.063 Ω - Confirmed worst-case on-resistance at VGS = 10 V, ID = 3 A, TJ = 25 °C; determines conduction loss in power stage. |
| ID (cont.) | 6 A at TC = 25 °C - Continuous drain current limited by PCB thermal performance (Rthj-pcb = 31.3 °C/W). |
| Qg | 48 nC - Total gate charge required for full turn-on; directly impacts driver power and switching loss. |
| tr/tf | 13.5 ns / 11.4 ns - Rise/fall times measured at VDD = 75 V, ID = 3 A, RG = 4.7 Ω; defines minimum practical switching period. |
| EAS | 125 mJ - Single-pulse avalanche energy at TJ = 25 °C; validates safe operation during inductive fault events. |
Pinout & Package
STL25N15F4 uses PowerFLAT™ (5×6) surface-mount package with exposed drain pad (D) on bottom for thermal and electrical connection. The package has 5 terminals: 3 drain pins (D), 1 source (S), and 1 gate (G), arranged in a single-row configuration optimized for high-current PCB routing and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain, 3 pins) | Main current path output terminal | Electrically and thermally connected to exposed copper pad; must be soldered to large PCB copper area for thermal management. |
| S (Source) | Reference node for gate drive and current return | Provides low-inductance return path; used as ground reference for gate driver ICs in half-bridge configurations. |
| G (Gate) | Control input for channel conduction | High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; requires series resistor (4.7 Ω typical) to damp ringing. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Self-turn-off behavior with zero gate voltage; eliminates need for active pull-down in low-side switch applications. |
| 100% avalanche rated | Guaranteed survival under unclamped inductive switching stress up to 12.5 A and 125 mJ - no derating needed for flyback or motor phase transitions. |
| Low gate charge (48 nC) | Reduces driver power consumption and switching transition time, enabling higher PWM frequencies without excessive gate drive losses. |
| Very low RDS(on) (0.057 Ω typ.) | Limits conduction loss to ≤2.05 W at 6 A, supporting compact thermal design in space-constrained power modules. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: High-efficiency step-down regulator for industrial PLC I/O modules operating from 24–48 V input. IC Role / Device Role: Low-side synchronous rectifier in 300 kHz buck stage, replacing Schottky diode to reduce forward drop and improve efficiency. Use Value: Achieves >94% efficiency at 5 A load due to 0.057 Ω RDS(on) and 11.4 ns fall time minimizing overlap loss. |
Use Scenario: H-bridge driver for 12–24 V brushed motors in automated gate actuators. IC Role / Device Role: Low-side switch controlling motor direction and PWM speed regulation. Use Value: Withstands 12.5 A repetitive avalanche current during motor commutation spikes, eliminating external snubbers. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
|
Use Scenario: Constant-current dimmable LED driver for architectural lighting with 36 V string voltage. IC Role / Device Role: Switching element in constant-current buck topology regulating LED current up to 3 A. Use Value: Low 48 nC gate charge enables clean PWM dimming down to 100 Hz without gate oscillation or shoot-through risk. |
Use Scenario: Redundant 12 V power supply OR-ing in telecom shelf management units. IC Role / Device Role: Ideal diode replacement in back-to-back configuration for hot-swap and fault isolation. Use Value: Source-drain diode forward voltage of 1.3 V at 6 A enables lower forward drop than discrete Schottky, reducing heat generation in parallel supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP050N15N3G | RDS(on) = 0.050 Ω (lower), Qg = 52 nC (higher), TO-252 package | Higher thermal mass but larger footprint; less suitable for ultra-thin PCBs | Prefer when board-level thermal mass is available and lowest conduction loss is prioritized over gate drive strength. |
| Vishay SIHFN150-GE3 | RDS(on) = 0.075 Ω (higher), Qg = 36 nC (lower), TO-220AB package | Through-hole mounting; better heatsink attachment but slower assembly | Choose when manual repairability, mechanical robustness, or legacy through-hole compatibility is required. |
Compared with STL25N15F4, IPP050N15N3G offers lower conduction loss but demands stronger gate drive, while SIHFN150-GE3 trades higher RDS(on) for simpler drive and mechanical serviceability - selection depends on thermal layout constraints and production assembly method.
Availability
STL25N15F4 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current regulators, and power supply OR-ing circuits requiring stable component supply and long-term industrial availability.
Supply support for STL25N15F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained industrial power systems using advanced STripFET™ and DeepGATE™ technologies.
FAQ
Is STL25N15F4 suitable for synchronous rectification in a 100 kHz buck converter?
Yes. With 0.057 Ω RDS(on), 48 nC Qg, and 13.5 ns rise time, it delivers low conduction and switching losses at 100 kHz. Its 1.3 V source-drain diode forward voltage and 85 ns reverse recovery time further reduce body-diode conduction loss during dead-time intervals.
What is the maximum PCB copper area recommended for thermal performance?
ST recommends ≥1 in² (645 mm²) of 2 oz copper connected to the exposed drain pad for Rthj-pcb = 31.3 °C/W. For 6 A continuous operation at ambient 50 °C, this limits junction temperature to ~115 °C - within the 150 °C absolute maximum rating.
Does STL25N15F4 require a gate resistor, and what value is recommended?
Yes. A 4.7 Ω series gate resistor is specified in the datasheet test circuit (Figure 13) to damp high-frequency ringing caused by parasitic inductance. Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching losses.
Can STL25N15F4 replace a TO-220 MOSFET in an existing design?
Only with PCB redesign. Its PowerFLAT™ (5×6) footprint differs entirely from TO-220: no through-holes, exposed drain on bottom, and 5-terminal SMT layout. Thermal and electrical simulation is required to confirm equivalent junction temperature and gate drive stability in the new layout.
STL25N15F4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 63mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2710 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (5x6)
STL25N15F4 FAQ
1.How can I place an order for STL25N15F4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL25N15F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL25N15F4 reliable?
The price and inventory of STL25N15F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL25N15F4 is usually 5 days.
3.What payment methods are accepted for STL25N15F4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL25N15F4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL25N15F4?
STL25N15F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL25N15F4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL25N15F4?
For technical support, including STL25N15F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL25N15F4 requirements.
6.How does Aetrix verify that STL25N15F4 is sourced from the original manufacturer or authorized distributors?
All STL25N15F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL25N15F4 meets industry standards.
7.What is the process for return or replacement of STL25N15F4?
All STL25N15F4 units undergo pre-shipment inspection (PSI). If there is an issue with STL25N15F4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL25N15F4 part is unused and in its original packaging.
Return procedure for STL25N15F4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STL25N15F4 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

