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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL35N75LF3

Name: STL35N75LF3
Brand: STMicroelectronics
SKU: STL35N75LF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL35N75LF3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL35N75LF3.pdf

Description:: MOSFET N-CH 75V 32A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL35N75LF3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ F3 technology, designed for high-efficiency switching in DC-DC converters and motor control. It delivers 75 V V_DS, 20 mΩ typ. R_DS(on) at V_GS = 10 V, 32 A continuous drain current (T_case = 25 °C), and 50 W total power dissipation in a surface-mount PowerFLAT™ 3.3×3.3 package.

For engineers reviewing the STL35N75LF3 datasheet, STL35N75LF3 pinout, STL35N75LF3 application, or STL35N75LF3 equivalent, key selection criteria include low gate charge (7.5 nC), fast switching (t_d(off) = 22.8 ns typ.), source-drain diode recovery (t_rr = 26 ns), thermal resistance (R_thj-case = 2.5 °C/W), and robust avalanche capability (E_AS = 230 mJ).

Technical Context

This MOSFET employs STripFET™ F3 trench-gate process to simultaneously reduce R_DS(on) and gate charge-enabling high-frequency operation with minimal conduction and switching losses. Its low threshold voltage (V_GS(th) = 1–2.4 V) supports direct drive from 3.3 V and 5 V logic controllers.

The device integrates a fast-recovery body diode (Q_rr = 24 nC, t_rr = 26 ns) and is rated for unclamped inductive switching up to 230 mJ single-pulse avalanche energy, making it suitable for hard-switched topologies where diode commutation and transient robustness are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - maximum blocking voltage for 24 V and 48 V bus applications
R_DS(on) typ.	20 mΩ at V_GS = 10 V - enables <1 W conduction loss at 7 A RMS in buck converter switches
Q_g	7.5 nC - reduces gate driver power demand and enables >500 kHz PWM operation
t_d(off)	22.8 ns typ. - supports fast turn-off in synchronous rectification and half-bridge configurations
E_AS	230 mJ - withstands inductive energy spikes without failure in motor drive freewheeling
R_thj-case	2.5 °C/W - allows 50 W dissipation with ≤125 °C junction rise over 25 °C case temperature
t_rr	26 ns - minimizes reverse recovery loss and EMI in synchronous buck and LLC resonant converters

Pinout & Package

STL35N75LF3 uses the PowerFLAT™ 3.3×3.3 package-a thermally enhanced, dual-side cooled, surface-mount leadless package with exposed drain pad on the bottom for optimal PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Exposed copper pad on underside-must be soldered to large PCB copper area for thermal and electrical connection
Source (S)	Current return node	Two side terminals (pins 1 & 2); low-inductance return path for high di/dt switching
Gate (G)	Control electrode	Single side terminal (pin 3); requires low-impedance gate drive to exploit low Q_g

Key Features

Feature	Design Value
Low gate charge (Q_g)	7.5 nC enables efficient 3.3 V/5 V gate driving and reduces switching loss by >30% vs. legacy F2 devices
Low R_DS(on) × Q_g figure of merit	187.5 mΩ·nC - optimized trade-off for high-frequency SMPS efficiency
Fast body diode recovery	t_rr = 26 ns and Q_rr = 24 nC minimize shoot-through risk and EMI in synchronous rectifiers
Robust avalanche rating	E_AS = 230 mJ ensures reliable operation under unclamped inductive load transients
Thermally enhanced package	R_thj-case = 2.5 °C/W supports 50 W dissipation without heatsink in compact layouts

Applications

DC-DC Converters

Motor Control

Use Scenario: Synchronous buck converter in telecom power supply delivering 12 V/20 A from 48 V input.

IC Role / Device Role / Timing Role: High-side switch with 500 kHz PWM, leveraging low Q_g and fast t_d(off) for efficiency.

Use Value: Achieves >95% efficiency at full load due to 20 mΩ R_DS(on) and 7.5 nC Q_g, reducing thermal stress on PCB.

Use Scenario: Half-bridge gate driver stage in 24 V BLDC motor controller for industrial fans.

IC Role / Device Role / Timing Role: Low-side switch handling 32 A peak current with fast body diode recovery during PWM commutation.

Use Value: 26 ns t_rr prevents cross-conduction and limits voltage overshoot during freewheeling.

LED Drivers

Power OR-ing

Use Scenario: Constant-current LED string driver with PWM dimming in architectural lighting.

IC Role / Device Role / Timing Role: Switching element in buck-boost topology operating at 1 MHz with tight duty-cycle control.

Use Value: Low R_DS(on) minimizes dropout voltage; low Q_g ensures clean 100 ns minimum on-time fidelity.

Use Scenario: Redundant 48 V power rail OR-ing in server backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement with low forward drop and fast reverse recovery.

Use Value: 1.1 V V_SD at 8 A and 26 ns t_rr reduce conduction loss and improve fault isolation speed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 22 mΩ @ 10 V; Q_g = 11.5 nC; TO-252 package	Higher thermal resistance (R_thj-amb ≈ 62 °C/W) limits power density in space-constrained designs	Prefer when through-hole mounting or higher avalanche margin (E_AS = 320 mJ) is required
DMTH7007LPSQ-13	R_DS(on) = 23 mΩ @ 10 V; Q_g = 6.8 nC; PowerFLAT™ 5×6 package	Larger footprint and higher R_thj-pcb (35 °C/W) reduces PCB-level thermal performance	Choose when lower gate charge is prioritized and board area permits larger package

Compared with IRF7470PBF and DMTH7007LPSQ-13, STL35N75LF3 offers the best balance of low R_DS(on), ultra-low Q_g, and compact thermal package-making it optimal for high-frequency, high-density DC-DC and motor drive applications where PCB real estate and switching loss are critical.

Availability

STL35N75LF3 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and LED drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STL35N75LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F3 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL35N75LF3 supports 20 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This rating is derived from its R_thj-case = 2.5 °C/W and maximum T_j = 175 °C, allowing 70 °C temperature rise above case temperature.

Is the PowerFLAT™ 3.3×3.3 package compatible with standard reflow profiles?

Yes-the PowerFLAT™ 3.3×3.3 package is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. The exposed drain pad requires adequate stencil design and solder paste volume to ensure void-free thermal interface to the PCB ground plane.

Does STL35N75LF3 have built-in ESD protection?

No-STL35N75LF3 does not integrate on-chip ESD protection diodes. Per datasheet Section 2, gate-body leakage (I_GSS) is ±100 nA at ±20 V, indicating no integrated clamping. External gate protection (e.g., 12 V Zener) is recommended in systems exposed to handling or system-level ESD events.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

Yes-its V_GS(th) range is 1–2.4 V, and R_DS(on) remains 30 mΩ max at V_GS = 4.5 V and ID = 4 A (Table 4). However, full 20 mΩ performance requires 10 V drive; for 3.3 V operation, expect ~2× higher on-resistance and verify thermal margin at target load current.

STL35N75LF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (3.3x3.3)

STL35N75LF3 FAQ

1.How can I place an order for STL35N75LF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL35N75LF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL35N75LF3 reliable?

The price and inventory of STL35N75LF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL35N75LF3 is usually 5 days.

3.What payment methods are accepted for STL35N75LF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL35N75LF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL35N75LF3?

STL35N75LF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL35N75LF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL35N75LF3?

For technical support, including STL35N75LF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL35N75LF3 requirements.

6.How does Aetrix verify that STL35N75LF3 is sourced from the original manufacturer or authorized distributors?

All STL35N75LF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL35N75LF3 meets industry standards.

7.What is the process for return or replacement of STL35N75LF3?

All STL35N75LF3 units undergo pre-shipment inspection (PSI). If there is an issue with STL35N75LF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL35N75LF3 part is unused and in its original packaging.

Return procedure for STL35N75LF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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