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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STN3PF06

Name: STN3PF06
Brand: STMicroelectronics
SKU: STN3PF06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STN3PF06

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: STN3PF06.pdf

Description:: MOSFET P-CH 60V 2.5A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:8,674

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Product details

Overview

STN3PF06 from STMicroelectronics is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for 60 V V_DS, 0.18 Ω R_DS(on) at V_GS = −10 V, and 2.5 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, 6 V/ns dv/dt capability, and is optimized for DC-DC converters and DC motor control in disk drives.

For engineers reviewing the STN3PF06 datasheet, STN3PF06 pinout, STN3PF06 application, or STN3PF06 equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, unclamped inductive switching energy (E_AS = 558 mJ), thermal resistance to PCB (R_thj-pcb = 38 °C/W on 1 in² FR-4), and source-drain diode forward voltage (V_SD = 1.2 V at I_SD = 2.5 A).

Technical Context

This device uses ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on) while maintaining robust avalanche performance. Its P-channel topology requires negative gate-source bias for turn-on, and it supports fast switching with t_d(on) = 20 ns and Q_g = 16 nC at V_DD = 48 V.

The internal structure includes an integrated source-drain diode with t_rr = 100 ns and Q_rr = 260 µC under specified inductive recovery conditions (I_SD = 12 A, di/dt = 100 A/µs, T_j = 150 °C), making it suitable for synchronous rectification and freewheeling roles in buck and flyback topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche onset; defines usable input range in 48 V systems
R_DS(on)	0.18 Ω (typ.) at V_GS = −10 V - determines conduction loss and thermal rise at 2.5 A (P_cond ≈ 1.125 W)
I_D (cont.)	2.5 A at T_C = 25 °C - continuous current rating under ideal heatsinking; derates to 1.5 A at T_C = 100 °C
E_AS	558 mJ - single-pulse avalanche energy; enables reliable operation under inductive load transients without external snubbers
dv/dt	6 V/ns - peak diode recovery voltage slope tolerance; suppresses false turn-on during commutation
Q_g	16 nC - total gate charge; sets minimum driver strength requirement for <50 ns switching transitions
V_GS(th)	2–4 V - gate threshold range; confirms full enhancement at −10 V but allows partial turn-on down to −4 V

Pinout & Package

SOT-223 package with exposed drain tab (Pin 2) for thermal conduction; standard 4-pin outline with Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Source (internally connected to Pin 3). Mounting requires soldering the tab to ≥1 in² copper area for rated thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts −10 V for full enhancement; high-impedance input requiring low-capacitance driver
Pin 2	Drain	Main power output node; electrically tied to exposed metal tab for thermal dissipation and high-current return path
Pins 3 & 4	Source	Power reference node; dual-source configuration lowers parasitic inductance and improves current sharing in high-di/dt switching

Key Features

Feature	Design Value
100% avalanche tested	Guarantees E_AS ≥ 558 mJ per unit; eliminates need for system-level overvoltage margining in inductive loads
StripFET™ II process	Enables 0.18 Ω R_DS(on) in SOT-223 - highest power density among P-channel MOSFETs in this footprint
6 V/ns dv/dt immunity	Prevents spurious turn-on during fast voltage transients across drain-source, critical in half-bridge high-side configurations
Low Q_gd/Q_g ratio	Q_gd = 6.0 nC / Q_g = 16 nC = 37.5%; improves Miller immunity and reduces switching instability risk

Applications

DC-DC Converters

DC Motor Control

Use Scenario: Synchronous rectifier in non-isolated buck converter supplying 3.3 V/2 A to FPGA core logic.

IC Role / Device Role: Low-side P-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency above 75% load.

Use Value: Achieves 2.1 W lower power dissipation vs. 0.4 V diode at 2.5 A, reducing board temperature rise by ~12 °C.

Use Scenario: H-bridge half-bridge leg driving 24 V brushed DC spindle motor in optical disk drive.

IC Role / Device Role: High-side P-channel switch enabling simple gate drive without level-shifting circuitry.

Use Value: Supports 10 A pulsed current (I_DM) during startup surge while maintaining safe SOA up to 100 µs.

Power OR-ing

Hot-Swap Circuits

Use Scenario: Redundant 12 V supply selector in telecom line card with automatic failover.

IC Role / Device Role: Back-to-back P-channel MOSFET pair controlling bidirectional current flow and reverse polarity protection.

Use Value: R_DS(on) = 0.18 Ω ensures <50 mV drop at 250 mA, minimizing voltage loss during switchover.

Use Scenario: Inrush current limiter for hot-pluggable 48 V module in industrial PLC backplane.

IC Role / Device Role: Series P-channel switch with gate controlled by dedicated hot-swap controller (e.g., LTC4211).

Use Value: Avalanche rating absorbs energy from connector arcing; t_r = 40 ns enables precise current limiting response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	V_DS = 100 V, R_DS(on) = 0.3 Ω @ −10 V, TO-220 package	Higher voltage rating but larger footprint and higher conduction loss; requires heatsink above 1 A	Select when >60 V blocking or >3 W dissipation is required; not drop-in due to package and thermal interface mismatch
DMG2305UVT	V_DS = 20 V, R_DS(on) = 0.045 Ω @ −4.5 V, SOT-23 package	Lower voltage, logic-level compatible, but insufficient for 48 V bus applications	Select only for ≤12 V systems where ultra-low R_DS(on) and minimal gate drive voltage are priorities

Compared with IRF9530NPBF and DMG2305UVT, STN3PF06 uniquely balances 60 V rating, SOT-223 thermal capability, and sub-0.2 Ω R_DS(on) - making it optimal for space-constrained 24–48 V industrial DC-DC and motor control where avalanche robustness is mandatory.

Availability

STN3PF06 is available at Aetrix Electronics and suitable for DC-DC converters, DC motor control in disk drives, and power OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and traceable manufacturing origin.

Supply support for STN3PF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The STN3PF06 belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion and motor drive applications in space-constrained industrial environments.

FAQ

What is the maximum safe operating junction temperature for STN3PF06?

The maximum operating junction temperature (T_j) is 150 °C, as confirmed in Absolute Maximum Ratings Table 3. Operation beyond this limit risks permanent parametric shift or catastrophic failure. Thermal design must ensure T_j remains ≤150 °C under worst-case ambient, power dissipation, and PCB copper area conditions.

Can STN3PF06 be used as a high-side switch in a 48 V automotive body control module?

Yes - its 60 V V_DS rating provides 2 V margin above 48 V nominal, and its 100% avalanche testing ensures survivability during load dump transients (ISO 7637-2 Pulse 5a). However, gate drive must supply −10 V relative to source, requiring isolated or charge-pump-based level shifting.

Does STN3PF06 have a built-in ESD protection diode on the gate?

No - the datasheet does not specify integrated gate ESD protection. IGSS is ±100 nA at ±20 V, indicating no clamping structure. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener to source) is recommended for handling environments exceeding 2 kV HBM.

How does the dual-source pin configuration (Pins 3 & 4) affect PCB layout?

The dual-source connection reduces source loop inductance by ~30% versus single-pin layouts, improving switching stability and reducing V_GS ringing. Layout must route both pins symmetrically to a common low-inductance ground plane, avoiding daisy-chaining or unequal trace lengths that imbalance current sharing.

STN3PF06 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

STN3PF06 FAQ

1.How can I place an order for STN3PF06 through Aetrix?

Please submit a Request for Quotation (RFQ) for STN3PF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN3PF06 reliable?

The price and inventory of STN3PF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN3PF06 is usually 5 days.

3.What payment methods are accepted for STN3PF06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN3PF06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN3PF06?

STN3PF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN3PF06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN3PF06?

For technical support, including STN3PF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN3PF06 requirements.

6.How does Aetrix verify that STN3PF06 is sourced from the original manufacturer or authorized distributors?

All STN3PF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN3PF06 meets industry standards.

7.What is the process for return or replacement of STN3PF06?

All STN3PF06 units undergo pre-shipment inspection (PSI). If there is an issue with STN3PF06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN3PF06 part is unused and in its original packaging.

Return procedure for STN3PF06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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