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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP10N65K3

Name: STP10N65K3
Brand: STMicroelectronics
SKU: STP10N65K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP10N65K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP10N65K3.pdf

Description:: MOSFET N-CH 650V 10A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,497

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Product details

Overview

STP10N65K3 from STMicroelectronics is an N-channel 650 V, 0.75 Ω typ., 10 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching applications requiring low conduction loss, high dv/dt immunity (12 V/ns), and robust unclamped inductive switching capability (EAS = 212 mJ). It features Zener-protected gate, 100% avalanche tested, and improved body diode reverse recovery (trr = 320 ns at TJ = 25 °C).

For engineers reviewing the STP10N65K3 datasheet, STP10N65K3 pinout, STP10N65K3 application, or STP10N65K3 equivalent, key selection criteria include RDS(on) stability over temperature, Coss eq. (77 pF), gate charge (Qg = 42 nC), avalanche ruggedness, and TO-220FP thermal resistance (RthJC = 3.57 °C/W).

Technical Context

This MOSFET employs ST's MDmesh K3 vertical structure with optimized cell layout to reduce specific on-resistance while maintaining high breakdown voltage integrity. Its low Crss (14 pF) and controlled Qgd/Qg ratio (23/42 nC) enable fast, controllable switching with reduced Miller-induced turn-on risk.

The integrated Zener-protected gate withstands ±30 V stress, and its body diode exhibits low VSD (1.5 V @ 7 A) and tightly specified trr (320–410 ns across temperature), supporting hard-switched PFC and resonant LLC primary-side operation without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 VAC input systems with ≥2× safety margin in offline SMPS.
R_DS(on) typ.	0.75 Ω @ V_GS = 10 V, I_D = 3.6 A - Enables <1.5 W conduction loss at 10 A continuous current.
Q_g	42 nC - Determines gate driver power requirement and switching speed in hard-switched topologies.
E_AS	212 mJ @ T_J = 25 °C - Guarantees single-pulse avalanche survival under unclamped inductive fault conditions.
C_oss eq.	77 pF - Defines energy stored in output capacitance (E_oss ≈ 0.5 × C_osseq × V_DS²), critical for ZVS design margin.
trr	320 ns @ I_SD = 7 A, dI/dt = 100 A/µs - Limits diode recovery-induced voltage overshoot and EMI in bridge configurations.
R_thJC	3.57 °C/W - Enables 35 W dissipation at T_C = 25 °C; defines heatsink interface requirement for thermal design.

Pinout & Package

TO-220FP package: insulated plastic case with integral heatsink tab; pin 1 = Gate, pin 2 = Drain (tab-connected), pin 3 = Source; creepage/clearance compliant per 2.5 kV RMS insulation rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Accepts 0–10 V logic-level drive; Zener-clamped to ±30 V; requires <42 nC charge for full enhancement.
Pin 2 (D)	Drain (connected to metal tab)	High-voltage power node; electrically tied to heatsink; must be isolated unless system ground referenced.
Pin 3 (S)	Source return path	Reference node for gate drive; carries full load current; forms common-source configuration with G and D.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 212 mJ single-pulse energy handling under unclamped inductive load conditions.
Extremely high dv/dt capability	12 V/ns rated - suppresses false turn-on in noisy high-dV/dt environments like motor drives and inverters.
Very low intrinsic capacitance	Ciss = 1180 pF, Crss = 14 pF - reduces switching losses and improves gate drive efficiency in high-frequency converters.
Improved diode reverse recovery	trr = 320 ns, Qrr = 2 µC - lowers commutation losses and EMI in synchronous rectification and half-bridge topologies.
Zener-protected gate	±30 V gate-source rating - eliminates need for external gate protection in industrial-grade power supplies.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors up to 2 kW.

IC Role / Device Role / Timing Role: High-side/low-side switching element with fast, controlled turn-off to minimize shoot-through risk.

Use Value: Low Qgd (23 nC) and 12 V/ns dv/dt immunity prevent unintended turn-on during cross-conduction transitions.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: Main power switch handling 400 VDC bus with ZVS-assisted turn-on.

Use Value: Coss eq. = 77 pF enables predictable resonant timing and low Eoss (≈10 µJ @ 400 V), reducing dead-time loss.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC-DC boost stage stepping up PV panel output (200–1000 V) before inversion.

IC Role / Device Role / Timing Role: High-voltage, high-efficiency switch operating at 50–100 kHz with hard switching.

Use Value: RDS(on) = 0.75 Ω typ. ensures <0.75 W conduction loss at 10 A, improving overall system efficiency >98.5%.

Use Scenario: Full-bridge inverter driving series-resonant tank at 20–100 kHz for domestic cooktops.

IC Role / Device Role / Timing Role: Fast-switching power device managing high di/dt (>100 A/µs) and reverse recovery stress.

Use Value: trr = 320 ns and IRRM = 13 A limit voltage spikes during diode commutation, reducing snubber size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	RDS(on) = 0.55 Ω typ., higher ID = 12 A, but lower EAS = 180 mJ and no Zener gate protection.	Better conduction efficiency at high current, but reduced avalanche margin and gate robustness in transient-prone environments.	Select when conduction loss dominates and system-level clamping protects gate; avoid in unclamped inductive loads.
IPP65R099C7	650 V, 0.099 Ω typ., TO-220 package, but Coss eq. = 120 pF and trr = 450 ns - higher switching loss and slower diode recovery.	Lower RDS(on) suits high-current, low-frequency (<50 kHz) applications; unsuitable for high-frequency ZVS or fast recovery needs.	Prefer for high-power, low-frequency SMPS where conduction loss outweighs switching loss; verify diode recovery impact.

Compared with STP12N65M2 and IPP65R099C7, STP10N65K3 delivers optimal balance of avalanche ruggedness, gate protection, and dynamic performance for 65–100 kHz hard-switched and resonant converters where reliability under fault conditions is critical.

Availability

STP10N65K3 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and server power supply designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP10N65K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP10N65K3 belongs to the MDmesh K3 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP10N65K3 supports 6.3 A continuous drain current at TC = 100 °C, as defined by its safe operating area and thermal resistance (RthJC = 3.57 °C/W). This derating ensures junction temperature remains below 150 °C under sustained load with appropriate heatsinking.

Does STP10N65K3 have built-in gate protection?

Yes - the device integrates a Zener diode between gate and source, providing ±30 V gate-source voltage clamping. This eliminates the need for external gate protection components in most industrial applications, enhancing system robustness against ESD and transient overvoltage.

How does the body diode performance compare to standard MOSFETs?

STP10N65K3 features improved body diode characteristics: trr = 320 ns (at 25 °C), Qrr = 2 µC, and VSD = 1.5 V @ 7 A. These values reflect optimized carrier lifetime control and reduced minority-carrier storage, resulting in lower recovery loss and EMI versus legacy 650 V MOSFETs.

Can STP10N65K3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Coss eq. (77 pF) and well-characterized output capacitance enable predictable resonant timing in LLC and phase-shifted full-bridge converters. The device's 12 V/ns dv/dt rating and low Qgd also support reliable ZVS operation without spurious turn-on during voltage transitions.

STP10N65K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP10N65K3 FAQ

1.How can I place an order for STP10N65K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10N65K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10N65K3 reliable?

The price and inventory of STP10N65K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10N65K3 is usually 5 days.

3.What payment methods are accepted for STP10N65K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10N65K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10N65K3?

STP10N65K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10N65K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10N65K3?

For technical support, including STP10N65K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10N65K3 requirements.

6.How does Aetrix verify that STP10N65K3 is sourced from the original manufacturer or authorized distributors?

All STP10N65K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10N65K3 meets industry standards.

7.What is the process for return or replacement of STP10N65K3?

All STP10N65K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP10N65K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10N65K3 part is unused and in its original packaging.

Return procedure for STP10N65K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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