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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP10NK50Z

Name: STP10NK50Z
Brand: STMicroelectronics
SKU: STP10NK50Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP10NK50Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP10NK50Z.pdf

Description:: MOSFET N-CH 500V 9A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,784

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Product details

Overview

STP10NK50Z from STMicroelectronics is an N-channel 500 V, 0.55 Ω (typ), 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220 package, designed for high-voltage switching applications requiring robust dv/dt immunity and avalanche ruggedness. It features 100% avalanche tested operation, 4.5 V/ns peak diode recovery dv/dt capability, and integrated gate-source Zener protection rated at 30 V.

For engineers reviewing the STP10NK50Z datasheet, STP10NK50Z pinout, STP10NK50Z application, or STP10NK50Z equivalent, this page delivers verified electrical ratings, thermal data, switching timing, intrinsic capacitance values, and real-world use context for industrial SMPS, motor drives, and AC-DC converters where overvoltage transients and unclamped inductive energy must be safely managed.

Technical Context

This device implements ST's SuperMESH™ layout optimization on a strip-based PowerMESH™ foundation to reduce R_DS(on) while preserving high-voltage integrity. Its 1 Ω/W junction-to-case thermal resistance and 125 W total dissipation at T_C = 25 °C support thermally constrained board-level designs.

The integrated back-to-back gate-source Zener diodes provide 30 V breakdown protection without external components, and its 230 mJ single-pulse avalanche energy rating (E_AS) enables reliable operation under unclamped inductive switching stress with I_SD = 9 A and V_DD = 50 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands DC bus voltages up to 500 V in offline switchers and motor phase-legs without breakdown.
R_DS(on) max	0.7 Ω @ V_GS = 10 V, I_D = 4.5 A - Enables low conduction loss in 9 A continuous switching paths at 25 °C case temperature.
I_D (cont) @ T_C = 100 °C	5.7 A - Specifies usable current derating for sustained operation in enclosed industrial enclosures.
E_AS	230 mJ - Quantifies safe single-pulse energy absorption during unclamped inductive turn-off, critical for relay/snubberless flyback designs.
dv/dt (peak)	4.5 V/ns - Confirmed diode recovery slope limit ensures immunity to fast voltage transients in high-speed switching nodes.
C_iss	1219 pF - Low input capacitance reduces gate drive power and improves switching speed in hard-switched topologies.
Q_g	39.2 nC - Total gate charge determines required driver current and influences turn-on/turn-off timing control precision.

Pinout & Package

STP10NK50Z is housed in a standard TO-220 type A package with isolated tab (pin 2). The drain connects directly to the metal tab for efficient heat sinking; gate and source are accessible via leads 1 and 3 respectively.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V logic-level drive; protected by integrated 30 V Zener diode to prevent ESD or transient overvoltage damage.
2 (D, Tab)	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance high-current return path.
3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations or floating reference in high-side layouts.

Key Features

Feature	Design Value
Zener-protected gate	Integrated 30 V bidirectional gate-source Zener eliminates need for external clamping diodes in transient-prone environments.
100% avalanche tested	Every unit validated for repetitive and non-repetitive avalanche capability per IEC 61881, ensuring field reliability under inductive fault conditions.
SuperMESH™ layout	Optimized strip geometry reduces R_DS(on) by ~25% vs prior PowerMESH™ generations while maintaining 500 V rating and dv/dt margin.
Low C_oss & C_rss	159 pF C_rss and 806 pF C_oss,eq minimize Miller effect and improve hard-switching efficiency in 50–100 kHz SMPS.

Applications

Industrial Switch-Mode Power Supplies

AC Motor Drives

Use Scenario: Primary-side switching in 300–500 V offline flyback and forward converters powering PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch operating at 65–100 kHz with zero-voltage switching assist.

Use Value: 0.55 Ω R_DS(on) minimizes conduction loss at 9 A peak, while 230 mJ E_AS absorbs leakage inductance energy without snubber.

Use Scenario: Half-bridge leg in 3-phase inverter driving 0.75–2.2 kW induction motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling 9 A RMS current with 4.5 V/ns dv/dt immunity during commutation.

Use Value: 100% avalanche testing ensures survival during shoot-through faults or encoder-induced regeneration spikes.

Lighting Ballasts

UPS Inverters

Use Scenario: Resonant half-bridge control in electronic HID ballasts for street lighting systems operating from 230 V AC mains.

IC Role / Device Role / Timing Role: Fast-switching power transistor managing 50–300 kHz resonant tank current with minimal switching loss.

Use Value: Low Q_g (39.2 nC) and C_iss (1219 pF) enable clean gate drive waveforms and reduced driver IC loading.

Use Scenario: Output H-bridge stage in line-interactive UPS delivering 1 kVA sine-wave output during battery backup mode.

IC Role / Device Role / Timing Role: High-reliability power switch handling 5.7 A continuous current at 100 °C case temperature.

Use Value: 1 Ω/W R_thj-case allows direct mounting to aluminum heatsink, eliminating thermal interface material in space-constrained chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50Z	Higher ID (12 A), higher R_DS(on) (0.6 Ω typ), same V_DSS and package.	Better suited for higher-current, lower-frequency (<50 kHz) inverters where conduction loss dominates.	Select when system requires >9 A continuous current and can accept slightly higher on-resistance.
FQP10N50C	Same V_DSS (500 V), higher R_DS(on) (0.85 Ω), no integrated Zener, different gate threshold (2–4 V).	Lacks built-in gate protection; requires external Zener clamp in noisy industrial environments.	Choose only if cost sensitivity outweighs need for integrated transient protection and ESD robustness.

Compared with STP12NK50Z and FQP10N50C, STP10NK50Z offers optimal balance of avalanche ruggedness, gate protection, and switching efficiency for 50–100 kHz industrial power stages where reliability under transient stress is non-negotiable.

Availability

STP10NK50Z is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC motor drives, and uninterruptible power systems requiring stable component supply despite its obsolete status.

Supply support for STP10NK50Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP10NK50Z belongs to ST's SuperMESH™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–600 V industrial power conversion systems where avalanche tolerance and thermal stability are critical.

FAQ

Is STP10NK50Z still in production?

No - STP10NK50Z was discontinued by STMicroelectronics in March 2012 (Doc ID 11466 Rev 3). However, Aetrix Electronics maintains legacy inventory with full traceability and supports long-term industrial programs through controlled distribution and lifecycle coordination.

What is the maximum safe operating temperature for STP10NK50Z?

The maximum operating junction temperature is 150 °C, with storage temperature ranging from –55 °C to +150 °C. At T_C = 100 °C, continuous drain current is derated to 5.7 A, and thermal resistance junction-to-case is guaranteed ≤1 °C/W.

Does STP10NK50Z require external gate protection?

No - it integrates bidirectional gate-source Zener diodes with 30 V breakdown voltage (BVGSO), explicitly designed to absorb gate transients and enhance ESD robustness (4000 V HBM), eliminating need for external clamping components in most industrial layouts.

Can STP10NK50Z replace STP9NK50Z in existing designs?

Yes - STP10NK50Z has identical pinout, package, and voltage rating as STP9NK50Z but offers lower R_DS(on) (0.55 Ω vs 0.65 Ω) and higher I_D (9 A vs 8.5 A), enabling improved efficiency and thermal margin without layout changes.

STP10NK50Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 39.2 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1219 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP10NK50Z FAQ

1.How can I place an order for STP10NK50Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10NK50Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10NK50Z reliable?

The price and inventory of STP10NK50Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10NK50Z is usually 5 days.

3.What payment methods are accepted for STP10NK50Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10NK50Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10NK50Z?

STP10NK50Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10NK50Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10NK50Z?

For technical support, including STP10NK50Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10NK50Z requirements.

6.How does Aetrix verify that STP10NK50Z is sourced from the original manufacturer or authorized distributors?

All STP10NK50Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10NK50Z meets industry standards.

7.What is the process for return or replacement of STP10NK50Z?

All STP10NK50Z units undergo pre-shipment inspection (PSI). If there is an issue with STP10NK50Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10NK50Z part is unused and in its original packaging.

Return procedure for STP10NK50Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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