Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP160N4LF6

Name: STP160N4LF6
Brand: STMicroelectronics
SKU: STP160N4LF6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP160N4LF6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP160N4LF6.pdf

Description:: MOSFET N-CH 40V 120A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,156

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP160N4LF6 from STMicroelectronics is an N-channel 40 V Power MOSFET in TO-220 package, featuring 0.0022 Ω typ. R_DS(on) at V_GS = 10 V, 120 A continuous drain current, and 150 W power dissipation. It employs STripFET™ VI DeepGATE™ technology for ultra-low on-resistance and logic-level gate drive, targeting high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the STP160N4LF6 datasheet, STP160N4LF6 pinout, STP160N4LF6 application, or STP160N4LF6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche ruggedness (323 mJ E_AS), gate charge (181 nC), SOA limits, and TO-220 thermal resistance (1.0 °C/W junction-to-case).

Technical Context

This MOSFET uses a 6th-generation STripFET™ VI process with DeepGATE™ gate structure to minimize R_DS(on) × Q_g product-critical for high-frequency switching efficiency. Its low 0.0022 Ω R_DS(on) enables reduced conduction loss in high-current paths, while 100% avalanche testing ensures robustness under inductive load transients.

The device supports logic-level drive (V_GS(th) = 1 V min) and delivers stable performance across –55 °C to 175 °C junction temperature. Dynamic parameters-including C_iss = 8130 pF, Q_gd = 46 nC, and t_r = 131 ns-support optimized gate driver design for fast, low-loss switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12–24 V system-level power rails
R_DS(on) typ.	0.0022 Ω @ V_GS = 10 V - Enables ≤1.32 W conduction loss at 60 A
I_D cont.	120 A @ T_C = 25 °C - Supports high-current battery switching and motor phase legs
E_AS	323 mJ - Confirmed single-pulse avalanche energy for unclamped inductive turn-off
Q_g	181 nC - Determines gate driver current requirement (e.g., ≥3.6 A peak for 50 ns rise)
R_thj-case	1.0 °C/W - Allows 150 W dissipation with ≤150 °C ΔT from case to junction
V_GS(th)	1.0 V min - Ensures full enhancement with 3.3 V or 5 V logic-level microcontroller outputs

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Tab is electrically connected to drain for direct heatsink coupling and low-inductance thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for channel current	Low-impedance source node; connects to ground or low-side return rail
2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD
3 (Drain) + Tab	Main power output terminal and thermal interface	Drain tied to metal tab; must be electrically isolated from heatsink unless referenced to same potential

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading figure-of-merit enabling high-frequency, high-efficiency SMPS designs
Logic-level gate drive	V_GS(th) as low as 1.0 V allows direct interfacing with 3.3 V/5 V MCUs without level-shifting
100% avalanche tested	Guaranteed 323 mJ single-pulse E_AS supports reliable operation in inductive switching failure modes
STripFET™ VI DeepGATE™	6th-gen trench-gate process delivering lowest R_DS(on) in TO-220 footprint for 40 V class

Applications

DC-DC Converter Primary Switch

Automotive Body Control Module (BCM) Load Switch

Use Scenario: High-current synchronous buck converter in 12 V automotive power distribution.

IC Role / Device Role / Timing Role: High-side main switch handling up to 120 A pulsed load currents with minimal conduction loss.

Use Value: 0.0022 Ω R_DS(on) reduces I²R loss by >30% vs. legacy 40 V MOSFETs, improving efficiency at 100 kHz–500 kHz switching.

Use Scenario: Centralized power switching for headlights, fog lamps, and HVAC actuators in BCM.

IC Role / Device Role / Timing Role: Low-side load switch controlled by 5 V MCU GPIO with integrated overcurrent and thermal protection.

Use Value: Logic-level threshold and 100% avalanche rating eliminate need for external protection during lamp inrush or relay coil flyback.

Industrial Motor Drive Half-Bridge Leg

Server PSU ORing FET

Use Scenario: 24 V BLDC motor inverter stage for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, commutated at ≤20 kHz with dead-time control.

Use Value: 1.0 °C/W R_thj-case and 150 W P_TOT allow sustained 80 A RMS current with passive heatsinking.

Use Scenario: Hot-swap ORing diode replacement in redundant 12 V server power supplies.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with reverse current blocking.

Use Value: Ultra-low R_DS(on) cuts forward voltage drop to <0.13 V at 100 A, reducing heat generation by >90% vs. Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 0.004 Ω typ. (higher), Q_g = 131 nC (lower), TO-220 package	Lower gate charge eases driver design but higher conduction loss increases thermal load at >60 A	Prefer when gate drive capability is limited and peak current ≤80 A
IXTP130N04T	R_DS(on) = 0.0026 Ω typ., Q_g = 145 nC, TO-220 package, no avalanche rating specified	Lacks guaranteed E_AS spec; requires external clamping for inductive loads	Select only in non-avalanche-critical applications with controlled turn-off dv/dt

Compared with IRF1404PBF and IXTP130N04T, STP160N4LF6 offers the lowest R_DS(on) and certified avalanche ruggedness-making it optimal for high-current, unclamped inductive switching where reliability under fault conditions is mandatory.

Availability

STP160N4LF6 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server ORing circuits, and high-current DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for STP160N4LF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained 12–48 V systems where low R_DS(on) and robust avalanche behavior are critical.

FAQ

What is the maximum safe operating area (SOA) for STP160N4LF6 at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited to 100 A continuous drain current per datasheet Table 2. Pulse operation up to 480 A is permitted only for durations constrained by thermal limits and avalanche energy-verified via Figure 2, which defines time-limited boundaries based on V_DS, I_D, and pulse width.

Does STP160N4LF6 require a gate resistor for typical 100 kHz switching in a buck converter?

Yes-a gate resistor (typically 2.2–4.7 Ω) is required to dampen ringing and control dV/dt. With Q_g = 181 nC and typical driver output impedance, a 4.7 Ω resistor yields ~130 ns rise time, aligning with recommended switching speeds in Figure 15 test circuit and avoiding shoot-through in synchronous topologies.

Can STP160N4LF6 be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 11) enables inherent current sharing. For stable paralleling, match gate drive layout, use individual gate resistors, and ensure symmetrical PCB thermal paths. Derate total current by 15% to account for thermal coupling and parameter spread.

Is the TO-220 tab of STP160N4LF6 internally connected to drain, and what isolation voltage is rated?

Yes-the metal tab is electrically connected to the drain terminal. ST does not specify a dielectric isolation voltage for the TO-220 package; users must apply insulating pads or shoulder washers rated for ≥500 V RMS when mounting to grounded heatsinks in high-voltage systems.

STP160N4LF6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 181 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8130 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP160N4LF6 FAQ

1.How can I place an order for STP160N4LF6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP160N4LF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP160N4LF6 reliable?

The price and inventory of STP160N4LF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP160N4LF6 is usually 5 days.

3.What payment methods are accepted for STP160N4LF6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP160N4LF6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP160N4LF6?

STP160N4LF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP160N4LF6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP160N4LF6?

For technical support, including STP160N4LF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP160N4LF6 requirements.

6.How does Aetrix verify that STP160N4LF6 is sourced from the original manufacturer or authorized distributors?

All STP160N4LF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP160N4LF6 meets industry standards.

7.What is the process for return or replacement of STP160N4LF6?

All STP160N4LF6 units undergo pre-shipment inspection (PSI). If there is an issue with STP160N4LF6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP160N4LF6 part is unused and in its original packaging.

Return procedure for STP160N4LF6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …