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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16N50M2

Name: STP16N50M2
Brand: STMicroelectronics
SKU: STP16N50M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP16N50M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP16N50M2.pdf

Description:: MOSFET N-CH 500V 13A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:7,811

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Product details

Overview

STP16N50M2 from STMicroelectronics is an N-channel 500 V, 240 mΩ typ. (280 mΩ max.), 13 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback, PFC, and resonant converters operating at 65–300 kHz. It features 19.5 nC total gate charge, 44 pF output capacitance, and 100% avalanche-tested ruggedness.

For engineers reviewing the STP16N50M2 datasheet, STP16N50M2 pinout, STP16N50M2 application, or STP16N50M2 equivalent, key selection criteria include its low Coss profile for soft-switching, Zener-protected gate, 15 V/ns diode recovery dv/dt rating, and RthJC of 1.14 °C/W for thermally constrained board layouts.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance-enabling high-voltage switching with minimal switching loss and reduced EMI. Its Coss eq. of 192 pF (0–400 V) supports ZVS operation in LLC topologies.

The integrated body diode delivers 280 ns trr at 13 A/100 A/µs and 1.6 V forward voltage, while the 215 mJ single-pulse avalanche energy (EAS) ensures robustness under unclamped inductive switching stress without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(on) max	280 mΩ @ V_GS = 10 V, I_D = 6.5 A - Enables <1.5 W conduction loss at 10 A continuous drain current.
Q_g	19.5 nC - Reduces gate drive power and allows use of low-cost 1-W drivers in high-frequency designs.
C_oss	44 pF @ V_DS = 100 V - Low stored energy (E_oss = 2 µJ @ 400 V) minimizes turn-on loss in hard- and soft-switched topologies.
T_J max	150 °C - Permits operation in sealed industrial enclosures with limited airflow and ambient up to 85 °C.
I_AR	4 A repetitive avalanche current - Sustains repeated inductive turn-off events without degradation in motor drive or relay control circuits.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.

Pinout & Package

STP16N50M2 is housed in a DPAK (TO-252) surface-mount package with exposed drain tab for thermal enhancement. The package complies with ECOPACK® environmental standards and mounts on 1 in² FR-4 with 2 oz copper for optimal thermal performance (R_thJC = 1.14 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±25 V.
2 (D / TAB)	Drain / Thermal Pad	Main high-side switching node and primary thermal path; electrically connected to drain; requires PCB copper pour for heatsinking.
3 (S)	Source	Reference node for gate drive and current sensing; connects to ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized trade-off between R_DS(on) and C_oss, enabling >95% efficiency in 100–300 kHz PFC stages.
Extremely low gate charge	19.5 nC total charge reduces driver losses and enables higher switching frequencies without gate drive overheating.
Excellent C_oss profile	C_oss = 44 pF and C_{oss eq.} = 192 pF (0–400 V) support predictable ZVS timing and lower EMI in resonant converters.
Zener-protected gate	Integrated gate-source Zener clamps transients to ±25 V, eliminating need for external gate protection in noisy industrial environments.
100% avalanche tested	Each unit undergoes unclamped inductive switching test per JEDEC JESD22-A109, ensuring reliability in overvoltage fault conditions.

Applications

Industrial Flyback SMPS

Active PFC Stage

Use Scenario: 24–48 V isolated auxiliary supply in PLC controllers with 85–265 V AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 100 kHz with discontinuous conduction mode (DCM).

Use Value: Low Q_g and C_oss reduce switching loss by 32% vs. legacy 500 V MOSFETs, enabling smaller heatsinks and higher power density.

Use Scenario: Boost-type active PFC in 300 W server power supplies.

IC Role / Device Role / Timing Role: Main boost switch operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: 240 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, supporting >97% PFC efficiency at 230 V AC input.

LLC Resonant Converter

Motor Drive Half-Bridge

Use Scenario: 600 W LED driver with wide-output-voltage range (24–56 V) and constant-current regulation.

IC Role / Device Role / Timing Role: High-side leg switch in asymmetric half-bridge LLC topology with ZVS turn-on.

Use Value: C_{oss eq.} of 192 pF enables reliable ZVS down to 20% load, eliminating turn-on loss across full operating range.

Use Scenario: 1 kW BLDC inverter for HVAC compressors with 3-phase sinusoidal commutation.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter bridge, handling pulsed 52 A peak currents.

Use Value: 52 A pulsed drain current (I_DM) and 215 mJ EAS withstand short-circuit events during rotor lock detection without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50Z	Higher R_DS(on) (420 mΩ), higher Q_g (42 nC), older Zener-protected SuperMESH process.	Lower switching frequency limit (~60 kHz); less suitable for >150 kHz PFC or LLC.	Select when cost sensitivity outweighs efficiency targets and thermal margin is ample.
FDPF16N50T	Similar R_DS(on) (280 mΩ), but no Zener gate protection; C_oss = 65 pF; not 100% avalanche tested.	Requires external gate clamp; higher EMI risk in noisy environments; lower ruggedness assurance.	Choose only if gate drive circuit includes discrete Zener protection and application lacks strict avalanche reliability requirements.

Compared with STP14NK50Z and FDPF16N50T, STP16N50M2 delivers superior switching efficiency via lower Q_g and C_oss, guaranteed avalanche ruggedness for fault-tolerant designs, and integrated gate protection-making it the preferred choice for compact, high-reliability 500 V SMPS where thermal and EMI margins are constrained.

Availability

STP16N50M2 is available at Aetrix Electronics and suitable for industrial flyback SMPS, active PFC stages, and LLC resonant converters requiring stable component supply and long-term lifecycle support.

Supply support for STP16N50M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP16N50M2 belongs to the MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies targeting >95% efficiency and compact form factors.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP16N50M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10450 Rev 7. This derating reflects thermal limitations of the DPAK package under sustained high-power operation and must be verified against actual PCB layout and heatsinking.

Does STP16N50M2 require external gate protection?

No. STP16N50M2 integrates a Zener diode between gate and source, rated for ±25 V, which clamps transient overvoltage and eliminates the need for external gate protection components in typical industrial switching applications.

How does the Coss eq. value impact LLC resonant converter design?

The Coss eq. of 192 pF (0–400 V) defines the effective capacitance charging the resonant tank during dead time. A lower Coss eq. reduces required magnetizing current for ZVS, enabling reliable zero-voltage switching at light loads and improving overall converter efficiency and EMI behavior.

Can STP16N50M2 replace STP16NF50 in existing designs?

No-STP16NF50 is a 500 V, 0.3 Ω N-channel MOSFET with different gate threshold (2–4 V vs. 3–5 V), higher Q_g (45 nC), and no Zener protection. Direct replacement risks gate drive incompatibility, increased switching loss, and reduced avalanche robustness; redesign validation is required.

STP16N50M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP16N50M2 FAQ

1.How can I place an order for STP16N50M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16N50M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16N50M2 reliable?

The price and inventory of STP16N50M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16N50M2 is usually 5 days.

3.What payment methods are accepted for STP16N50M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16N50M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16N50M2?

STP16N50M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16N50M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16N50M2?

For technical support, including STP16N50M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16N50M2 requirements.

6.How does Aetrix verify that STP16N50M2 is sourced from the original manufacturer or authorized distributors?

All STP16N50M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16N50M2 meets industry standards.

7.What is the process for return or replacement of STP16N50M2?

All STP16N50M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP16N50M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16N50M2 part is unused and in its original packaging.

Return procedure for STP16N50M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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