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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16N65M2

Name: STP16N65M2
Brand: STMicroelectronics
SKU: STP16N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP16N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP16N65M2.pdf

Description:: MOSFET N-CH 650V 11A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:7,666

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Product details

Overview

STP16N65M2 from STMicroelectronics is an N-channel 650 V, 320 mΩ (typ), 11 A Power MOSFET using MDmesh M2 technology in IPAK (TO-251) package. It delivers low gate charge (19.5 nC), optimized Coss profile (32 pF), and 100% avalanche tested ruggedness for high-efficiency flyback and PFC converters in industrial SMPS.

For engineers reviewing the STP16N65M2 datasheet, STP16N65M2 pinout, STP16N65M2 application, or STP16N65M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and Zener-protected gate reliability in hard-switching topologies.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its 1.14 °C/W junction-to-case thermal resistance and 360 mJ single-pulse avalanche energy support sustained operation under transient overload conditions.

The device features a Zener-protected gate (±25 V rating), low Crss (1.1 pF), and tightly controlled VGS(th) (2–4 V) with minimal drift across –75 °C to 125 °C. Its Coss eq. of 189 pF (0–520 V) enables predictable turn-off timing in resonant and quasi-resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains-referenced DC bus in 400 V AC input systems without derating.
R_DS(on) max	360 mΩ at V_GS = 10 V, I_D = 5.5 A - Enables <1.5 W conduction loss at 11 A continuous drain current.
Q_g	19.5 nC - Reduces gate drive power and allows use of lower-cost, lower-current drivers in high-frequency designs.
E_AS	360 mJ - Supports robust unclamped inductive switching up to 1.9 A avalanche current without failure.
C_oss	32 pF - Minimizes capacitive turn-off loss and improves zero-voltage switching (ZVS) margin in LLC converters.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in bridge-leg configurations.
T_J max	150 °C - Allows full-rated output in compact heatsinked industrial power supplies up to 85 °C ambient.

Pinout & Package

IPAK (TO-251) package with isolated tab (Drain-connected), thermally efficient plastic body, and RoHS-compliant ECOPACK2 construction.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±25 V drive; 5.2 Ω intrinsic gate resistance limits ringing in high-dI/dt layouts.
2 (D, TAB)	Drain / Heat Sink Pad	Exposed metal tab electrically connected to Drain; provides primary thermal path (R_thJC = 1.14 °C/W) and must be insulated from chassis.
3 (S)	Source	Reference node for gate drive; carries full load current (11 A continuous) and reverse diode conduction (V_SD = 1.6 V @ 11 A).

Key Features

Feature	Design Value
MDmesh M2 silicon process	Enables 320 mΩ R_DS(on) at 650 V while maintaining low C_oss/C_iss ratio for high-frequency efficiency.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transients, eliminating need for external gate clamping in noisy environments.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 360 mJ, ensuring field reliability in inductive switching faults.
Optimized C_oss profile	C_oss = 32 pF at 100 V and C_{oss eq.} = 189 pF (0–520 V) enable precise soft-switching timing control in resonant topologies.
Low Q_gd/Q_gs ratio	Q_gd = 8.3 nC vs Q_gs = 4 nC ensures clean Miller plateau transition and reduced risk of spurious turn-on.

Applications

Industrial SMPS

Server PSU

Use Scenario: 1–3 kW open-frame power supply with active PFC and LLC resonant half-bridge secondary.

IC Role / Device Role / Timing Role: Primary-side switching device in boost PFC stage; operates at 65–100 kHz with ZVS-assisted turn-on.

Use Value: Low C_oss and 50 V/ns dv/dt ruggedness prevent false triggering and reduce snubber losses by >15% versus legacy 650 V MOSFETs.

Use Scenario: Hot-swap capable 80 PLUS Titanium server power supply with digital control and predictive thermal management.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC front-end; driven by isolated gate driver with adaptive dead-time control.

Use Value: 1.14 °C/W R_thJC and 110 W P_TOT allow full-load operation at 70 °C ambient without forced airflow derating.

Telecom Rectifier

Motor Drive Inverter

Use Scenario: 48 V telecom rectifier module with hold-up capacitor and dynamic load step response requirements.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology; handles 11 A RMS current with 300 ns trr diode recovery.

Use Value: 342 ns reverse recovery time and 3.5 µC Q_rr minimize commutation loss and EMI generation during zero-crossing transitions.

Use Scenario: 750 W BLDC inverter for HVAC fan control with integrated current sensing and overcurrent shutdown.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; conducts pulsed current up to 44 A with 100% avalanche immunity.

Use Value: Avalanche-rated operation eliminates need for external freewheeling diodes and reduces BOM count by one per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N65M5	Lower R_DS(on) (270 mΩ typ), higher Q_g (27 nC), same IPAK package.	Better conduction efficiency but increased gate drive loss above 150 kHz; requires stronger driver.	Select when thermal budget is constrained and switching frequency <100 kHz.
IPP65R190C7	650 V, 190 mΩ, TO-220FP package, no integrated Zener protection.	Higher power density but needs external gate clamp; not drop-in due to different pinout and thermal pad isolation.	Select when board space permits TO-220FP and gate drive circuit includes discrete protection.

Compared with STP16N65M2, the M5 variant trades higher switching loss for lower conduction loss, while the IPP65R190C7 offers superior R_DS(on) at the cost of gate protection and package compatibility-making STP16N65M2 optimal for cost-sensitive, medium-frequency industrial SMPS where reliability and ease of drive matter most.

Availability

STP16N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STP16N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP16N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial power supplies and infrastructure equipment.

FAQ

Is STP16N65M2 pin-compatible with STU16N65M2?

Yes, STP16N65M2 and STU16N65M2 share identical IPAK (TO-251) mechanical footprint, pinout (G-D-S), and electrical specifications. The STU variant is marked for tape-and-reel distribution, while STP denotes tube packaging-both are functionally and physically interchangeable in PCB layout.

What is the maximum recommended gate resistor value for 100 kHz operation?

For 100 kHz switching with 19.5 nC total gate charge, a gate resistor of 10 Ω to 22 Ω is recommended to limit peak gate current below 1 A while maintaining <30 ns turn-on delay. Lower values (<10 Ω) are advised if driving with low-impedance isolated gate drivers to suppress ringing.

Does STP16N65M2 require a heatsink in free-air operation at 6 A continuous?

No-R_thJA = 100 °C/W means 6 A × 360 mΩ = 12.96 W dissipation would raise junction temperature by 1296 °C above ambient, far exceeding 150 °C rating. A heatsink with R_thSA ≤ 4.5 °C/W is mandatory even at 6 A; typical design uses 25 mm² copper pour + clip-on aluminum fin for 11 A operation.

Can STP16N65M2 replace STP16NF60 in existing designs?

No-STP16NF60 is a 600 V, 0.22 Ω, 16 A device in TO-220 package with different pinout (G-D-S vs G-S-D) and no Zener gate protection. Voltage rating mismatch (600 V vs 650 V) and lack of avalanche testing make it unsuitable as a direct replacement in 400 V AC systems with high line surges.

STP16N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 718 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP16N65M2 FAQ

1.How can I place an order for STP16N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16N65M2 reliable?

The price and inventory of STP16N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16N65M2 is usually 5 days.

3.What payment methods are accepted for STP16N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16N65M2?

STP16N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16N65M2?

For technical support, including STP16N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16N65M2 requirements.

6.How does Aetrix verify that STP16N65M2 is sourced from the original manufacturer or authorized distributors?

All STP16N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16N65M2 meets industry standards.

7.What is the process for return or replacement of STP16N65M2?

All STP16N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP16N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16N65M2 part is unused and in its original packaging.

Return procedure for STP16N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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