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STMicroelectronics STP16NF25

Part No.:
STP16NF25
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP16NF25.pdf
Description:
MOSFET N-CH 250V 14A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,096

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Product details

Overview

STP16NF25 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, rated for 250 V drain-source voltage, 195 mΩ typical RDS(on) at VGS = 10 V, and 14 A continuous drain current at TC = 25 °C. It features low gate charge (18 nC), exceptional dv/dt capability (15 V/ns), and 100% avalanche tested ruggedness - deployed as primary switch in isolated DC-DC converters for telecom and server power supplies.

For engineers reviewing the STP16NF25 datasheet, STP16NF25 pinout, STP16NF25 application, or STP16NF25 equivalent, this device is selected for high-efficiency switching where low Qg, fast switching (td(on) = 9 ns), robust body diode recovery (Qrr = 651 nC), and thermal reliability (RthJC = 1.47 °C/W) are critical in 48 V–250 V input topologies.

Technical Context

This STripFET II MOSFET uses a planar trench-gate structure optimized to minimize Ciss (680 pF) and Crss (20 pF), enabling high-frequency operation with reduced switching losses. Its 100% unclamped inductive switching (UIS) tested avalanche rating (EAS = 100 mJ) ensures reliability under transient overloads in hard-switched converters.

The integrated source-drain diode exhibits trr = 133 ns and IRRM = 10 A at 25 °C, supporting synchronous rectification and flyback snubberless designs. Thermal design leverages the DPAK's low junction-to-case resistance (1.47 °C/W) when mounted on ≥1 in² 2 oz copper PCBs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 250 V - supports primary-side switching in 48 V telecom and 200 V industrial DC-DC converters without derating.
RDS(on) max 235 mΩ - limits conduction loss to ≤2.1 W at 14 A, enabling compact heatsink design in 100–500 kHz SMPS.
Qg 18 nC - reduces gate drive power and enables use with low-current controllers (e.g., UC384x, UCC28070).
dv/dt rating 15 V/ns - prevents false turn-on during high-slew-rate transients in half-bridge and LLC resonant circuits.
EAS 100 mJ - withstands single-pulse energy from inductive kickback in offline flyback or forward converters.
tr/tf 17 ns / 17 ns - enables clean zero-voltage switching (ZVS) transition in phase-shifted full-bridge topologies.
RthJC 1.47 °C/W - allows 85 W dissipation at ΔT = 125 °C with minimal thermal interface resistance.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2/TAB) for thermal and electrical connection; surface-mount footprint per ST-recommended FP_0068772_34 layout; tape-and-reel packaging (2500 pcs/reel).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal requiring ≤10 V threshold (VGS(th) = 2–4 V); low Ciss minimizes Miller effect.
Pin 2 (TAB/D) Drain High-side power node connected to PCB copper pour for thermal conduction and low-inductance return path.
Pin 3 (S) Source Reference node for gate drive; ties to power ground plane; carries full load current (14 A continuous).

Key Features

Feature Design Value
STripFET II process Reduces gate charge by 30% vs. standard planar MOSFETs, lowering driver IC stress and EMI.
100% avalanche tested Guarantees UIS survival up to 100 mJ, eliminating need for external clamping in cost-sensitive flyback designs.
Low Coss (125 pF) Minimizes capacitive switching loss and improves light-load efficiency in resonant converters.
Enhanced body diode Qrr 651 nC at 25 °C enables soft-recovery in quasi-resonant topologies without external Schottky assist.
ECOPACK® compliant Meets RoHS/REACH requirements with lead-free matte tin plating and halogen-free molding compound.

Applications

Telecom DC-DC Converters Industrial AC-DC Power Supplies

Use Scenario: Primary-side switch in 48 V input, 300 W isolated forward converter for base station power modules.

IC Role / Device Role / Timing Role: High-side main switch operating at 200 kHz with ZVS-assisted turn-on and controlled dv/dt edge rate.

Use Value: 235 mΩ RDS(on) and 18 nC Qg reduce total switching + conduction loss to <1.8 W, improving system efficiency by 1.2% over STP12NF25.

Use Scenario: Main switch in universal-input (85–265 VAC) 150 W flyback for factory automation PLC power rails.

IC Role / Device Role / Timing Role: Clamp-tolerant primary FET handling 250 V breakdown margin and 15 V/ns transient spikes from line surges.

Use Value: 100 mJ EAS rating eliminates need for TVS clamp, reducing BOM count and board area by 12 mm².

Server VRM Controllers LED Driver Flybacks

Use Scenario: Synchronous rectifier driver FET in multiphase buck-derived VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-Qg N-channel switch driven by dedicated gate driver IC with 5 ns propagation delay.

Use Value: 9 ns td(on) and 17 ns tr enable precise dead-time control, minimizing shoot-through risk at 1 MHz switching.

Use Scenario: Isolated flyback switch in 24 V, 100 W constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Energy-handling primary switch managing 133 ns diode recovery during discontinuous conduction mode (DCM).

Use Value: 133 ns trr and 10 A IRRM suppress voltage overshoot to <310 V, avoiding secondary-side snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250 V Power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP16NF25L Same die, but logic-level gate (VGS(th) = 1–2.5 V); RDS(on) = 260 mΩ @ VGS = 5 V Enables direct drive from 3.3 V microcontrollers; unsuitable for 10 V gate drivers due to higher RDS(on) Select when gate drive voltage ≤5 V and efficiency loss <0.5% is acceptable.
IRF640NPBF Higher RDS(on) (180 mΩ typ. @ 10 V), larger Qg (67 nC), no avalanche rating Lacks UIS ruggedness; requires external clamping in flyback; slower switching increases loss above 100 kHz Acceptable only in low-frequency (<60 kHz), non-critical industrial supplies with ample margin.

Compared with STP16NF25, STP16NF25L trades higher conduction loss for 3.3 V compatibility, while IRF640NPBF sacrifices avalanche safety and switching speed for legacy design reuse - making STP16NF25 optimal for new 200+ kHz telecom and server power designs demanding reliability and efficiency.

Availability

STP16NF25 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial AC-DC power supplies, and LED driver flybacks requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP16NF25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STP16NF25 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in isolated DC-DC converters and offline power supplies operating up to 250 V.

FAQ

What is the maximum safe operating temperature for STP16NF25?

The STP16NF25 has a specified junction temperature range of –55 °C to 150 °C. Maximum continuous operation occurs at TJ ≤ 150 °C, enforced by thermal derating: power dissipation drops linearly from 85 W at TC = 25 °C to zero at TC = 115 °C, based on RthJC = 1.47 °C/W.

Does STP16NF25 include an integrated body diode, and what are its key recovery specs?

Yes, STP16NF25 integrates a fast-recovery source-drain diode rated for 14 A continuous and 56 A pulsed current. At TJ = 25 °C, it delivers trr = 133 ns, Qrr = 651 nC, and IRRM = 10 A under standard test conditions (di/dt = 100 A/µs, VDD = 60 V), enabling snubberless operation in DCM flyback designs.

Can STP16NF25 be used in parallel configurations, and what layout considerations apply?

Yes - STP16NF25 supports paralleling due to its positive temperature coefficient of RDS(on). Critical layout practices include matched gate trace lengths (<2 mm difference), individual 10 Ω gate resistors, symmetrical power loop routing, and shared thermal pad with uniform solder paste deposition to ensure current sharing within ±8% across 2–4 devices.

Is STP16NF25 pin-compatible with earlier STP16NF20 or STP16NF25 variants?

No - STP16NF25 uses the DPAK (TO-252) package with Pin 1 (G), Pin 2 (TAB/D), Pin 3 (S) configuration. Earlier STP16NF20 was offered in TO-220, and STP16NF25 revisions prior to Rev 6 used DPAK type C2; mechanical differences in tab size and footprint require PCB redesign for type C3 compliance per DS5532 Rev 6.

STP16NF25 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
235mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP16NF25 FAQ

1.How can I place an order for STP16NF25 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16NF25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16NF25 reliable?

The price and inventory of STP16NF25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16NF25 is usually 5 days.

3.What payment methods are accepted for STP16NF25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16NF25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16NF25?

STP16NF25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16NF25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16NF25?

For technical support, including STP16NF25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16NF25 requirements.

6.How does Aetrix verify that STP16NF25 is sourced from the original manufacturer or authorized distributors?

All STP16NF25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16NF25 meets industry standards.

7.What is the process for return or replacement of STP16NF25?

All STP16NF25 units undergo pre-shipment inspection (PSI). If there is an issue with STP16NF25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16NF25 part is unused and in its original packaging.

Return procedure for STP16NF25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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