Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16NS25

Name: STP16NS25
Brand: STMicroelectronics
SKU: STP16NS25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP16NS25

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP16NS25.pdf

Description:: MOSFET N-CH 250V 16A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,813

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP16NS25 from STMicroelectronics is an N-channel 250 V, 16 A, 0.23 Ω R_DS(on) power MOSFET in TO-220 package, designed for high-current, high-speed switching in SMPS and lighting ballast converters. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and 600 mJ single-pulse avalanche energy.

For engineers reviewing the STP16NS25 datasheet, STP16NS25 pinout, STP16NS25 application, or STP16NS25 equivalent, key selection criteria include its 250 V V_DSS, 16 A continuous drain current at T_C = 25 °C, low 0.23 Ω on-resistance, robust unclamped inductive switching performance, and TO-220 thermal resistance of 0.9 °C/W.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination, enabling high voltage blocking and enhanced avalanche reliability. Its gate threshold voltage (2–4 V) and 15 S transconductance support clean turn-on with standard 10 V gate drive.

The device integrates a fast-recovery source-drain diode (t_rr = 270 ns, Q_rr = 1.5 µC) and delivers 59–83 nC total gate charge-optimized for hard-switched DC-DC converters and monitor B+ supplies where di/dt ≤ 300 A/µs and V_DD ≤ 250 V are enforced.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - supports primary-side switching in 230 VAC offline SMPS with margin
R_DS(on)	0.23 Ω (typ.) - enables <1.5 W conduction loss at 16 A, reducing heatsink requirements
I_D (cont.)	16 A at T_C = 25 °C - rated for sustained high-current operation with proper heatsinking
E_AS	600 mJ - withstands repetitive unclamped inductive energy spikes without failure
dv/dt	5 V/ns - resists false turn-on during fast transient voltage edges in noisy environments
Q_g	59–83 nC - determines gate driver power and switching speed trade-off in 100–500 kHz designs
t_rr	270 ns - minimizes reverse recovery losses when used in synchronous or freewheeling configurations

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-pin through-hole mounting. Thermal resistance junction-to-case is 0.9 °C/W, requiring mechanical mounting to heatsink via M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to ground or negative rail; referenced for gate drive
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring ~60 nC to fully enhance; sensitive to ESD
3 (Drain)	Main high-voltage power output node	Internally connected to metal tab; must be electrically isolated from heatsink unless floating

Key Features

Feature	Design Value
MESH OVERLAY™ process	Enables 250 V breakdown with low R_DS(on) and superior avalanche ruggedness vs planar MOSFETs
100% avalanche tested	Guarantees minimum 600 mJ single-pulse energy handling under worst-case inductive switching
Extremely high dv/dt capability	5 V/ns rating prevents spurious turn-on during fast voltage transients in SMPS snubbers
Integrated fast-recovery body diode	270 ns t_rr and 11.4 A I_RRM reduce switching losses in flyback and LLC resonant topologies
TO-220 thermal performance	0.9 °C/W R_th(j-c) allows 140 W dissipation at T_C = 25 °C with minimal heatsink volume

Applications

LED Driver Ballasts

Monitor B+ Supplies

Use Scenario: High-efficiency constant-current LED string drivers using buck or flyback topology with 230 VAC input.

IC Role / Device Role / Timing Role: Primary-side power switch handling 16 A peak currents and 250 V blocking.

Use Value: Low 0.23 Ω R_DS(on) reduces conduction loss by >30% vs comparable 0.35 Ω devices, improving thermal margin.

Use Scenario: High-voltage DC supply generation for CRT monitor anode (B+) circuits.

IC Role / Device Role / Timing Role: Fast-switching main transistor in series-regulated or resonant converter stage.

Use Value: 5 V/ns dv/dt immunity prevents false triggering during high-slew-rate B+ ramp-up transitions.

Industrial DC-DC Converters

Telecom Power Modules

Use Scenario: 48 V input, 12 V output isolated DC-DC modules for factory automation controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in forward topology.

Use Value: 270 ns body diode t_rr cuts reverse recovery loss by ~40% compared to standard 400 ns diodes.

Use Scenario: Hot-swap and OR-ing circuits in 48 V telecom rectifier shelves.

IC Role / Device Role / Timing Role: High-current, high-voltage pass element with controlled turn-on/turn-off timing.

Use Value: 64 A pulsed current rating supports 2× inrush current handling during board insertion events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP460	R_DS(on) = 0.27 Ω (typ.), V_DSS = 500 V, Q_g = 140 nC	Higher voltage rating but higher conduction loss and gate charge	Preferable only when >300 V blocking is required; less efficient at 250 V operation
STP16NF25	R_DS(on) = 0.20 Ω (typ.), V_DSS = 250 V, TO-220FP package (R_th(j-c) = 3 °C/W)	Lower on-resistance but higher thermal resistance limits power density	Better for low-loss needs in space-constrained layouts where heatsinking is limited

Compared with IRFP460 and STP16NF25, STP16NS25 offers optimal balance of low R_DS(on), robust avalanche rating, and thermal performance in standard TO-220-making it preferred for cost-sensitive, thermally demanding 250 V SMPS designs.

Availability

STP16NS25 is available at Aetrix Electronics and suitable for LED driver ballasts, monitor B+ supplies, and industrial DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP16NS25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The STP16NS25 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in lighting, power supply, and industrial motor control applications.

FAQ

What is the maximum continuous drain current for STP16NS25 at 100°C case temperature?

The maximum continuous drain current is 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Is STP16NS25 suitable for use in avalanche-mode operation?

Yes-STP16NS25 is 100% avalanche tested with a guaranteed 600 mJ single-pulse avalanche energy (E_AS) at T_j = 25 °C. Its rugged MESH OVERLAY™ structure supports repetitive unclamped inductive switching, making it appropriate for ZVS/ZCS topologies and protection-critical designs.

Does STP16NS25 have an integrated body diode, and what are its key parameters?

Yes-it features an integrated source-drain diode with 1.5 V forward voltage at 16 A, 270 ns reverse recovery time (t_rr), 1.5 µC reverse recovery charge (Q_rr), and 11.4 A peak reverse recovery current (I_RRM). These values are measured at T_j = 150 °C and support efficient freewheeling in flyback and forward converters.

Can STP16NS25 be used as a direct replacement for STP16NF25?

No-while both share identical voltage and current ratings, STP16NS25 uses TO-220 (R_th(j-c) = 0.9 °C/W), whereas STP16NF25 uses TO-220FP (R_th(j-c) = 3 °C/W). Substitution requires thermal redesign; STP16NS25 delivers higher power density but demands more robust heatsinking due to its lower thermal resistance.

STP16NS25 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP16NS25 FAQ

1.How can I place an order for STP16NS25 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16NS25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16NS25 reliable?

The price and inventory of STP16NS25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16NS25 is usually 5 days.

3.What payment methods are accepted for STP16NS25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16NS25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16NS25?

STP16NS25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16NS25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16NS25?

For technical support, including STP16NS25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16NS25 requirements.

6.How does Aetrix verify that STP16NS25 is sourced from the original manufacturer or authorized distributors?

All STP16NS25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16NS25 meets industry standards.

7.What is the process for return or replacement of STP16NS25?

All STP16NS25 units undergo pre-shipment inspection (PSI). If there is an issue with STP16NS25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16NS25 part is unused and in its original packaging.

Return procedure for STP16NS25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …