Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP16NS25FP

Name: STP16NS25FP
Brand: STMicroelectronics
SKU: STP16NS25FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP16NS25FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP16NS25FP.pdf

Description:: MOSFET N-CH 250V 16A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,730

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP16NS25FP from STMicroelectronics is an N-channel 250 V, 0.23 Ω (typ), 16 A TO-220FP power MOSFET optimized for high-current, high-speed switching in SMPS and lighting B+ circuits. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and integrated source-drain diode with 270 ns trr and 1.5 µC Qrr.

For engineers reviewing the STP16NS25FP datasheet, STP16NS25FP pinout, STP16NS25FP application, or STP16NS25FP equivalent, key selection criteria include RDS(on) at 10 V gate drive, safe operating area under inductive switching, thermal resistance (Rthj-case = 3 °C/W), and unclamped inductive avalanche rating (EAS = 600 mJ).

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination for enhanced voltage handling and switching robustness. Its 250 V V(BR)DSS and 5 V/ns dv/dt rating enable reliable operation in fast-switching flyback and resonant converters where voltage transients are severe.

The device integrates a source-drain diode with defined recovery characteristics (trr = 270 ns, Qrr = 1.5 µC, IRRM = 11.4 A), supporting synchronous rectification and freewheeling roles without external diode addition in DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	250 V - Maximum drain-source blocking voltage before avalanche onset; defines usable input voltage range in offline SMPS.
RDS(on) typ	0.23 Ω @ VGS = 10 V, ID = 8 A - Low conduction loss enabling <2.9 W dissipation at 16 A continuous current (TC = 25°C).
ID cont	16 A @ TC = 25°C - Continuous drain current rating; derates to 11 A at TC = 100°C due to thermal limits.
EAS	600 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching up to 16 A without failure.
Qg	59–83 nC - Total gate charge determines driver strength requirement; enables ~100 kHz switching with moderate gate drivers.
trr / Qrr	270 ns / 1.5 µC - Diode reverse recovery metrics critical for minimizing switching loss and EMI in hard-switched converters.
Rthj-case	3 °C/W - Junction-to-case thermal resistance; enables 40 W total dissipation at ΔT = 120°C (Tj max = 150°C, TC = 30°C).

Pinout & Package

STP16NS25FP uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain (tab) and leads, rated for 2500 V DC insulation withstand voltage. Mounting requires no insulating washer when heatsinked via the metal tab (Drain). Leads are bent for PCB through-hole mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to system ground; carries full load current and diode forward/reverse recovery current.
2 (Gate)	Control electrode for channel conduction	High-impedance input requiring ≤ ±20 V drive; 59–83 nC total charge dictates gate driver sizing.
3 (Drain)	Main power output node (connected to tab)	Internally tied to metal tab; electrically isolated from leads by 2500 V DC barrier; must be heatsinked.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 600 mJ at Tj = 25°C, enabling robust operation in inductive load switching without snubbers.
Extremely high dv/dt capability	5 V/ns rated slope ensures immunity to false turn-on during fast voltage transients in high-side or half-bridge configurations.
MESH OVERLAY™ process	Proprietary high-voltage cell structure delivers stable RDS(on) and superior SOA vs. conventional planar MOSFETs.
Integrated source-drain diode	Optimized for fast recovery (trr = 270 ns) and low Qrr (1.5 µC), reducing switching loss in freewheeling paths.

Applications

Monitor B+ Power Supply

Industrial DC-DC Converter

Use Scenario: Provides regulated high-voltage (150–200 V) anode supply for CRT monitors and legacy display systems.

IC Role / Device Role / Timing Role: Main switching transistor in flyback converter primary side, handling 16 A peak current at 20–50 kHz.

Use Value: 0.23 Ω RDS(on) minimizes conduction loss at high duty cycles; 250 V rating accommodates reflected voltage spikes without clamping.

Use Scenario: Primary-side switch in telecom-grade 48 V input DC-DC modules delivering 12 V/10 A output.

IC Role / Device Role / Timing Role: Hard-switched power stage transistor operating at 100 kHz with unclamped inductive loads.

Use Value: 600 mJ EAS rating prevents failure during startup surges or short-circuit events; TO-220FP isolation simplifies safety-compliant layout.

LED Driver Ballast

Lighting Equipment SMPS

Use Scenario: High-current switching element in electronic ballasts driving HID or high-power LED arrays.

IC Role / Device Role / Timing Role: Resonant mode switch in LLC or half-bridge topology, managing 16 A pulsed current at >100 kHz.

Use Value: 5 V/ns dv/dt immunity suppresses parasitic turn-on during zero-voltage switching transitions; low Qgd reduces Miller-induced delay.

Use Scenario: Primary switch in universal-input (90–264 VAC) SMPS for commercial lighting fixtures.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) flyback transistor handling 16 A peak drain current.

Use Value: 100% avalanche testing ensures reliability across line surges and lamp-strike transients; 3 °C/W Rthj-case enables compact heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF25	Same die, TO-220 (non-isolated) package; Rthj-case = 0.9 °C/W; no 2500 V isolation.	Suitable only where drain-to-heatsink isolation is not required; higher thermal performance but lower safety margin.	Select when cost and thermal efficiency outweigh isolation needs; verify creepage/clearance compliance.
IPP160N25N3 G	25 V lower V(BR)DSS (225 V); lower RDS(on) (0.016 Ω); different gate charge profile (Qg = 72 nC).	Better for 200 V-class inputs; unsuitable for 250 V-rated designs or surge-prone mains interfaces.	Choose only if system max VDS stays ≤225 V; verify SOA and avalanche capability are not required.

Compared with STP16NF25, STP16NS25FP trades thermal performance (3 vs. 0.9 °C/W) for reinforced isolation (2500 V), while IPP160N25N3G offers lower on-resistance but sacrifices 25 V of voltage headroom and avalanche ruggedness.

Availability

STP16NS25FP is available at Aetrix Electronics and suitable for monitor B+ supplies, industrial DC-DC converters, LED ballasts, and lighting equipment SMPS requiring stable component supply and long-term lifecycle support.

Supply support for STP16NS25FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and power applications.

STP16NS25FP belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in lighting, industrial power supplies, and display systems demanding avalanche tolerance and high dv/dt immunity.

FAQ

Is STP16NS25FP pin-compatible with STP16NF25?

Yes - both share identical lead assignments (Source-Gate-Drain) and TO-220 footprint dimensions. However, STP16NS25FP uses the TO-220FP variant with insulated tab and 2500 V isolation, while STP16NF25 uses standard TO-220 without isolation. Mechanical mounting and thermal interface differ accordingly.

What is the maximum recommended gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated per ST's test circuit (Figure 3) for 100 kHz operation with 16 A load. This value balances switching speed (td(on) = 14.5 ns, td(off) = 72 ns) and gate drive stability. Lower values risk ringing; higher values increase switching losses beyond 0.5 W at full load.

Does STP16NS25FP require a heatsink in continuous 16 A operation?

Yes - at 16 A continuous and 0.23 Ω RDS(on), conduction loss is ~5.9 W. With Rthj-case = 3 °C/W and max Tj = 150°C, even with ambient at 30°C, junction temperature exceeds 150°C without heatsinking. A heatsink maintaining TC ≤ 60°C is mandatory for sustained operation.

Can STP16NS25FP replace STP16NF25 in existing designs?

Yes, provided mechanical clearance allows the TO-220FP's slightly taller profile and electrical isolation requirements are met. The insulated tab eliminates need for mica washers, but thermal resistance increases from 0.9 to 3 °C/W - heatsink sizing must be re-evaluated to maintain Tj ≤ 150°C under same load conditions.

STP16NS25FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP16NS25FP FAQ

1.How can I place an order for STP16NS25FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP16NS25FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP16NS25FP reliable?

The price and inventory of STP16NS25FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP16NS25FP is usually 5 days.

3.What payment methods are accepted for STP16NS25FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP16NS25FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP16NS25FP?

STP16NS25FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP16NS25FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP16NS25FP?

For technical support, including STP16NS25FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP16NS25FP requirements.

6.How does Aetrix verify that STP16NS25FP is sourced from the original manufacturer or authorized distributors?

All STP16NS25FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP16NS25FP meets industry standards.

7.What is the process for return or replacement of STP16NS25FP?

All STP16NS25FP units undergo pre-shipment inspection (PSI). If there is an issue with STP16NS25FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP16NS25FP part is unused and in its original packaging.

Return procedure for STP16NS25FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …