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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP35NF10

Name: STP35NF10
Brand: STMicroelectronics
SKU: STP35NF10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP35NF10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP35NF10.pdf

Description:: MOSFET N-CH 100V 40A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP35NF10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 100 V V_DS, 40 A continuous drain current at T_C = 25°C, and 0.030 Ω typical R_DS(on) at V_GS = 10 V. It features low gate charge (55 nC), 100% avalanche tested construction, and exceptional dv/dt capability - optimized as a primary switch in isolated DC-DC converters for telecom and server power supplies.

For engineers reviewing the STP35NF10 datasheet, STP35NF10 pinout, STP35NF10 application, or STP35NF10 equivalent, key selection criteria include its 1.30 °C/W junction-to-case thermal resistance, 13 V/ns peak diode recovery dv/dt rating, 300 mJ single-pulse avalanche energy, and compatibility with standard gate drivers requiring ≤10 V logic-level drive.

Technical Context

This device employs ST's STripFET™ II process to minimize input capacitance (C_iss = 1550 pF) and gate charge, enabling high-frequency switching with reduced driver losses. Its rugged unclamped inductive switching performance is validated by 300 mJ EAS and 160 A pulsed drain current capability.

The integrated body diode exhibits 1.5 V forward voltage at 35 A and 160 ns reverse recovery time under harsh conditions (T_j = 150°C, di/dt = 100 A/µs), supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus designs with ≥2× safety margin against transients
R_DS(on)	0.030 Ω typ. - enables <1.8 W conduction loss at 25 A, reducing heatsink requirements
Q_g	55 nC - allows efficient 300–500 kHz operation with standard 1-A gate drivers
EAS	300 mJ - withstands unclamped inductive energy without failure in flyback or LLC resonant circuits
R_thj-case	1.30 °C/W - permits 88 W dissipation at ΔT = 115°C, suitable for forced-air-cooled 200–300 W SMPS
dv/dt	13 V/ns - resists false turn-on during fast voltage transitions in high-side configurations
I_D (T_C=100°C)	28 A - defines usable current limit in compact enclosures with elevated ambient temperatures

Pinout & Package

STP35NF10 is housed in a through-hole TO-220 package with electrically isolated tab (drain-connected). The case serves as the drain terminal, enabling direct heatsinking without insulating hardware when mounted with appropriate thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side return path; connects to ground or low-side switch node in half-bridge
2 (Gate)	Control input	Receives 10 V logic-level drive; requires <55 nC charge for full enhancement
3 (Drain / Tab)	High-voltage output	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss by ~25% vs. prior generation, lowering switching losses at 300–600 kHz
100% avalanche rated	Guarantees robustness in unclamped inductive switching without derating or external snubbers
Low Q_gd/Q_g ratio	20 nC/55 nC = 0.36 - improves Miller immunity and reduces risk of shoot-through in bridge configurations
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards

Applications

Telecom DC-DC Converters

Server PSU Primary Switch

Use Scenario: 48 V input, 12 V output isolated forward converter operating at 350 kHz.

IC Role / Device Role / Timing Role: Primary-side power switch handling full input power with zero-voltage switching assistance.

Use Value: 0.030 Ω R_DS(on) limits conduction loss to <1.9 W at 25 A, while 55 nC Q_g ensures clean turn-on with 1-A driver.

Use Scenario: 380 V DC input, 12 V output LLC resonant converter in 1U rack-mount server PSU.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge configuration driving resonant tank.

Use Value: 13 V/ns dv/dt rating prevents spurious turn-on during high-slew resonant node transitions.

Industrial Motor Drive Inverter

UPS Output Stage

Use Scenario: 24–48 V DC bus, 3-phase BLDC inverter for HVAC fan control.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement for cost-sensitive inverters.

Use Value: 28 A continuous current at 100°C case temperature supports 1.5 kW output with passive cooling.

Use Scenario: Online double-conversion UPS with 200–500 VA output and battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge for improved efficiency over Schottky diodes.

Use Value: Body diode t_rr = 160 ns and Q_rr = 720 nC enable clean commutation at 100 kHz without voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 0.044 Ω (higher), Q_g = 71 nC (29% higher), no avalanche rating	Lacks 100% avalanche testing; unsuitable for unclamped inductive loads	Acceptable only in low-stress linear or resistive switching where EAS is not required
STP40NF10	R_DS(on) = 0.028 Ω (lower), Q_g = 68 nC (24% higher), same package and voltage rating	Higher gate charge increases driver complexity; identical thermal and avalanche specs	Preferred when lowest conduction loss is critical and gate drive capability allows extra 13 nC charge

Compared with IRF540N and STP40NF10, STP35NF10 delivers optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness - making it ideal for telecom and industrial SMPS where reliability under transient stress is non-negotiable.

Availability

STP35NF10 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server power supplies, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for STP35NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

STP35NF10 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in telecom infrastructure and computing power systems.

FAQ

Is STP35NF10 suitable for use in synchronous rectification?

Yes. Its body diode has 1.5 V forward voltage at 35 A and 160 ns reverse recovery time at 150°C, enabling efficient synchronous rectification in secondary-side full-bridge or center-tapped topologies up to 100 kHz. Gate drive timing must account for Q_gd-dominated Miller plateau to avoid shoot-through.

What is the maximum safe operating frequency for STP35NF10 in hard-switched applications?

At 25 A load and 100 V bus, STP35NF10 supports reliable hard-switched operation up to 500 kHz when paired with a 1-A gate driver and proper PCB layout. Above 350 kHz, switching losses dominate; thermal design must ensure T_j remains below 150°C using its 1.30 °C/W R_thj-case.

Does STP35NF10 require a gate resistor for stability?

Yes. A 4.7 Ω series gate resistor is specified in the datasheet for switching time characterization and helps dampen ringing caused by PCB trace inductance and C_iss/C_rss interaction. Values between 2.2 Ω and 10 Ω are typical, balancing speed versus EMI and oscillation risk.

Can STP35NF10 replace STB35NF10 in existing designs?

Yes, with mechanical consideration. Both share identical electrical specs and TO-220 vs. D2PAK package variants differ only in thermal and mounting form factor. STP35NF10's TO-220 offers lower R_thj-amb in forced-air setups but requires screw-mount heatsinking; D2PAK suits surface-mount reflow assembly with higher R_thj-amb.

STP35NF10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP35NF10 FAQ

1.How can I place an order for STP35NF10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP35NF10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP35NF10 reliable?

The price and inventory of STP35NF10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP35NF10 is usually 5 days.

3.What payment methods are accepted for STP35NF10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP35NF10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP35NF10?

STP35NF10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP35NF10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP35NF10?

For technical support, including STP35NF10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP35NF10 requirements.

6.How does Aetrix verify that STP35NF10 is sourced from the original manufacturer or authorized distributors?

All STP35NF10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP35NF10 meets industry standards.

7.What is the process for return or replacement of STP35NF10?

All STP35NF10 units undergo pre-shipment inspection (PSI). If there is an issue with STP35NF10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP35NF10 part is unused and in its original packaging.

Return procedure for STP35NF10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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