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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP3NB100

Name: STP3NB100
Brand: STMicroelectronics
SKU: STP3NB100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP3NB100

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP3NB100.pdf

Description:: MOSFET N-CH 1000V 3A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP3NB100 from STMicroelectronics is an N-channel enhancement-mode PowerMesh™ MOSFET rated for 1000 V drain-source voltage, 5.3 Ω typical R_DS(on) at V_GS = 10 V and 1.5 A, 3 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for ruggedness in high-voltage switching applications such as welding inverters and industrial SMPS.

For engineers reviewing the STP3NB100 datasheet, STP3NB100 pinout, STP3NB100 application, or STP3NB100 equivalent, key selection criteria include its 1000 V blocking capability, low gate charge (22–30 nC), high dv/dt immunity (4.5 V/ns), and TO-220 package thermal resistance (1.25 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's proprietary PowerMesh™ structure with Mesh Overlay™ process and patented edge termination, enabling ultra-low R_DS(on) per die area and exceptional unclamped inductive switching robustness. Its 150 °C maximum junction temperature and 244 mJ single-pulse avalanche energy support operation under repetitive transient stress.

The device features minimized intrinsic capacitances (C_iss = 700 pF, C_oss = 80 pF, C_rss = 8 pF) and fast switching dynamics (t_d(on) = 18 ns, t_r = 12 ns, t_f = 28 ns), optimized for hard-switched topologies where gate drive efficiency and EMI control are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1000 V - supports primary-side switching in 800 V DC bus systems without derating
R_DS(on)	5.3 Ω typ. - enables low conduction loss at 3 A continuous, reducing heatsink requirements
Q_g	22–30 nC - minimizes gate driver power demand and improves switching efficiency
dv/dt	4.5 V/ns - ensures reliable operation during fast voltage transients in inductive loads
E_AS	244 mJ - provides margin against unclamped inductive energy in welder H-bridges
R_thj-case	1.25 °C/W - allows 100 W dissipation at ΔT = 125 °C with minimal thermal interface resistance

Pinout & Package

STP3NB100 uses the standard TO-220 package (3-pin, vertical mounting, isolated tab). Pin 1 is Gate, Pin 2 is Drain (tab-connected), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal requiring <30 V absolute max rating; drives channel turn-on with 22–30 nC total charge
Pin 2	Drain	Main high-voltage power terminal; electrically connected to metal tab for direct heatsinking and low-inductance layout
Pin 3	Source	Reference node for gate drive; carries full load current (3 A cont.) and supports source-drain diode recovery (t_rr = 580 ns)

Key Features

Feature	Design Value
PowerMesh™ cell architecture	Delivers lowest R_DS(on)/mm² among 1000 V MOSFETs of comparable die size, improving power density
100% avalanche tested	Guarantees single-pulse E_AS ≥ 244 mJ and repetitive I_AR ≥ 3 A under defined test conditions
Extremely high dv/dt capability	Withstands 4.5 V/ns voltage transients without false turn-on, eliminating need for external snubbers in many designs
Low intrinsic capacitances	C_iss/C_oss/C_rss ratio (700/80/8 pF) enables clean hard-switching waveforms with reduced ringing

Applications

Welding Inverter Primary Switch

Industrial SMPS High-Voltage Rail

Use Scenario: High-current DC-AC conversion in IGBT-assisted or all-MOSFET welding inverters operating from 600–800 V DC bus.

IC Role / Device Role / Timing Role: Main switching element in half-bridge or full-bridge topology handling 3 A RMS, 12 A pulsed drain current.

Use Value: 1000 V rating avoids series stacking; 244 mJ E_AS withstands arc-induced inductive spikes without failure.

Use Scenario: Primary-side switch in telecom or industrial off-line SMPS with universal AC input and PFC front-end.

IC Role / Device Role / Timing Role: Hard-switched power transistor controlling energy transfer at 50–100 kHz with 1000 V clearance.

Use Value: Low Q_g (22–30 nC) reduces gate driver losses; 4.5 V/ns dv/dt rating suppresses false triggering during fast turn-off.

DC-AC Converter for Plasma Cutting

High-Voltage Battery Disconnect

Use Scenario: Medium-frequency inverter stage converting 400–800 V battery or rectified DC into variable-frequency AC for plasma torch control.

IC Role / Device Role / Timing Role: Synchronous switching device in resonant or phase-shifted full-bridge, managing 3 A continuous conduction.

Use Value: TO-220 package with 1.25 °C/W R_thj-case sustains 100 W dissipation with passive cooling in enclosed enclosures.

Use Scenario: Solid-state main disconnect switch in EV charging infrastructure or HV energy storage systems.

IC Role / Device Role / Timing Role: Normally-open isolation FET activated only during fault clearing or maintenance sequencing.

Use Value: 1000 V V_DSS and 150 °C T_jmax ensure safe interruption of up to 900 V DC systems under elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK100Z	1000 V, 5.5 Ω R_DS(on), 3 A ID, Zener-protected gate, same TO-220 package	Includes integrated gate protection; slightly higher R_DS(on) and lower E_AS (190 mJ)	Preferred where gate overvoltage risk exists; trade-off is marginally higher conduction loss
FQP10N100C	1000 V, 7.5 Ω R_DS(on), 10 A ID, TO-3P package, no avalanche rating published	Higher current rating but larger footprint and unverified avalanche ruggedness	Suitable for space-constrained layouts needing higher peak current, but requires external clamping for inductive loads

Compared with STP3NB100, STP3NK100Z adds gate Zener protection at minor R_DS(on) cost, while FQP10N100C trades avalanche assurance and compact TO-220 form factor for higher current capacity and different thermal profile.

Availability

STP3NB100 is available at Aetrix Electronics and suitable for welding inverters, industrial SMPS, plasma cutting converters, and high-voltage battery disconnect systems requiring stable component supply across long production lifecycles.

Supply support for STP3NB100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and MEMS sensors for industrial, automotive, and consumer markets.

The PowerMesh™ MOSFET product line targets high-reliability, high-voltage switching applications demanding avalanche robustness, low gate charge, and stable R_DS(on) over temperature-especially in welding, induction heating, and industrial power conversion.

FAQ

Is STP3NB100 suitable for synchronous rectification?

No. STP3NB100 is an N-channel enhancement-mode MOSFET optimized for high-side or low-side switching in hard-switched topologies-not synchronous rectification. Its body diode reverse recovery time (580 ns) and lack of optimized diode Q_rr/t_rr specs make it unsuitable for high-frequency freewheeling paths where low-loss diode conduction is required.

What is the maximum recommended gate resistor value for reliable switching?

For stable turn-on/turn-off with minimal oscillation, ST recommends R_G ≤ 4.7 Ω when driving from a 10 V gate source, based on measured t_d(on) = 18 ns and t_f = 28 ns. Higher values increase switching losses and risk dv/dt-induced false turn-on; values below 2.2 Ω require careful PCB layout to avoid ringing.

Does STP3NB100 have built-in gate protection?

No. STP3NB100 lacks integrated gate Zener protection. Its absolute maximum V_GS is ±30 V, and gate leakage is specified at ±100 nA at ±30 V. External gate clamping (e.g., 18 V Zener) is strongly advised in noisy industrial environments to prevent oxide damage from ESD or coupling transients.

Can STP3NB100 replace STP3NB100FP in existing designs?

Yes, with thermal verification. Both share identical electrical specs and pinout, but STP3NB100FP uses TO-220FP (full-pack) with higher R_thj-case (3.57 °C/W vs. 1.25 °C/W). Replacing FP with standard TO-220 improves thermal performance but requires mechanical revalidation due to differing mounting hole positions and tab isolation.

STP3NB100 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP3NB100 FAQ

1.How can I place an order for STP3NB100 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP3NB100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP3NB100 reliable?

The price and inventory of STP3NB100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP3NB100 is usually 5 days.

3.What payment methods are accepted for STP3NB100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP3NB100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP3NB100?

STP3NB100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP3NB100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP3NB100?

For technical support, including STP3NB100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP3NB100 requirements.

6.How does Aetrix verify that STP3NB100 is sourced from the original manufacturer or authorized distributors?

All STP3NB100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP3NB100 meets industry standards.

7.What is the process for return or replacement of STP3NB100?

All STP3NB100 units undergo pre-shipment inspection (PSI). If there is an issue with STP3NB100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP3NB100 part is unused and in its original packaging.

Return procedure for STP3NB100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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