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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP4N62K3

Name: STP4N62K3
Brand: STMicroelectronics
SKU: STP4N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP4N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP4N62K3.pdf

Description:: MOSFET N-CH 620V 3.8A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:7,485

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Product details

Overview

STP4N62K3 from STMicroelectronics is a 620 V, 1.7 Ω typ., 3.8 A N-channel MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STP4N62K3 datasheet, STP4N62K3 pinout, STP4N62K3 application, or STP4N62K3 equivalent, key selection criteria include R_DS(on) at 10 V drive, E_AS = 115 mJ, C_oss = 42 pF, and thermal resistance R_thJC = 5 °C/W - critical for high-efficiency, high-reliability flyback and resonant converter designs.

Technical Context

This device employs ST's optimized vertical MDmesh K3 structure to achieve ultra-low R_DS(on) × Q_g figure-of-merit (37.4 Ω·nC), enabling fast switching with low conduction and gate-drive losses. Its intrinsic Zener protection eliminates external gate clamping in transient-prone topologies.

The MOSFET delivers enhanced diode reverse recovery (t_rr = 220 ns, Q_rr = 1.4 µC at T_J = 25 °C) and low C_iss/C_oss ratio (550 pF / 42 pF), supporting clean turn-off and reduced EMI in hard-switched applications up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 VAC mains input with ≥2× safety margin in primary-side switching
R_DS(on) max	2 Ω @ V_GS = 10 V, I_D = 1.9 A - enables <1.4 W conduction loss at 3.8 A continuous drain current
Q_g	22 nC - determines gate driver power requirement and switching speed in 100–300 kHz SMPS
E_AS	115 mJ - ensures robust unclamped inductive switching survival without snubber in PFC boost stages
t_r/t_f	9 ns / 19 ns - minimizes overlap loss and improves efficiency in hard-switched topologies
C_oss	42 pF - reduces capacitive turn-on loss and improves zero-voltage switching (ZVS) margin in LLC
R_thJC	5 °C/W - allows 25 W dissipation at ΔT = 125 °C junction-to-case, suitable for heatsink-mounted operation

Pinout & Package

STP4N62K3 is housed in a TO-220FP (Type B) package with isolated tab, rated for 2.5 kV RMS insulation between leads and heat sink. The plastic body provides creepage/clearance compliance for reinforced isolation in Class II systems.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤±30 V drive; Zener-protected against transients
2 (D, Tab)	Drain (Exposed Metal Tab)	Primary high-voltage node; electrically connected to heatsink; 2.5 kV isolation rating
3 (S)	Source	Power return path and gate reference; forms common node with driver ground in low-side configuration

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 115 mJ at T_J = 25 °C - eliminates need for overvoltage derating in flyback snubberless designs
Extremely high dv/dt capability	12 V/ns - prevents spurious turn-on during fast voltage transients in high-side bridge configurations
Very low intrinsic capacitance	C_iss = 550 pF, C_oss = 42 pF - reduces switching loss and improves light-load efficiency in QR flyback
Improved diode reverse recovery	t_rr = 220 ns, Q_rr = 1.4 µC - lowers diode-induced switching loss and EMI in boost PFC circuits
Zener-protected gate	Integrated ±20 V gate-body Zener - removes external TVS requirement and simplifies gate-drive layout

Applications

Offline AC-DC Adapters

Industrial PFC Boost Stages

Use Scenario: 65–100 W universal-input adapter with QR flyback topology operating at 65–130 kHz.

IC Role / Device Role: Primary-side high-voltage switch handling 620 V blocking and 3.8 A peak current.

Use Value: Low R_DS(on) and C_oss reduce conduction and capacitive turn-on loss, achieving >89% efficiency at full load.

Use Scenario: 300–500 W active PFC stage in industrial motor drives or UPS systems.

IC Role / Device Role: Boost switch managing 400 V DC bus with 3.8 A average current and high di/dt stress.

Use Value: Fast t_r/t_f and low Q_rr minimize switching loss and diode reverse recovery spikes, reducing heatsink size by 30%.

LED Driver Power Supplies

Telecom Rectifier Modules

Use Scenario: Constant-current LED driver with primary-side regulation for street lighting (230 VAC input).

IC Role / Device Role: High-voltage switch in buck-boost or SEPIC topology handling 620 V transients during lightning surges.

Use Value: 100% avalanche rating and 12 V/ns dv/dt immunity ensure reliable operation under surge conditions per IEC 61000-4-5 Level 4.

Use Scenario: -48 V telecom rectifier with dual forward or half-bridge topology feeding 48 V/30 A output.

IC Role / Device Role: Primary-side switch in high-reliability, fanless rectifier module requiring long MTBF and thermal stability.

Use Value: R_thJC = 5 °C/W and T_J(max) = 150 °C enable stable 25 W dissipation on compact heatsinks, supporting 20-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF4N62K3	Same die, TO-220FP package with non-isolated tab; R_thJC = 5 °C/W identical but no 2.5 kV isolation	Requires insulated mounting hardware for reinforced isolation; unsuitable for Class II consumer adapters	Select when cost-sensitive and isolation is managed externally via insulating pads or bushings
STI4N62K3	Same die, I²PAK package; R_thJC = 1.79 °C/W, higher power dissipation (70 W), but larger footprint	Better thermal performance for high-duty-cycle PFC; requires PCB real estate for D²PAK land pattern	Select for industrial PFC where thermal headroom >50 °C is required and board space permits

Compared with STF4N62K3, STP4N62K3 adds reinforced insulation for safety-critical AC-DC adapters; compared with STI4N62K3, it trades thermal performance for compact size and isolation - making it optimal for space-constrained, certified offline power supplies.

Availability

STP4N62K3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial PFC boost stages, and LED driver power supplies requiring stable component supply, long-lifecycle support, and certified isolation performance.

Supply support for STP4N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions across automotive, industrial, and consumer markets.

STP4N62K3 belongs to the MDmesh K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability high-voltage switching in offline power conversion - emphasizing avalanche ruggedness, low gate charge, and fast diode recovery.

FAQ

Is STP4N62K3 pin-compatible with STF4N62K3?

No - STP4N62K3 uses TO-220FP Type B (isolated tab), while STF4N62K3 uses standard TO-220FP (non-isolated tab). Pin numbering is identical (G-D-S), but mechanical mounting and isolation requirements differ. Direct replacement requires verification of heatsink insulation and creepage distance compliance.

What is the maximum recommended gate resistor for STP4N62K3 in a 100 kHz QR flyback?

A 4.7 Ω gate resistor is validated per datasheet Figure 23 for V_DD = 300 V, I_D = 1.9 A, yielding t_d(on) = 10 ns and t_f = 19 ns. For 100 kHz operation, this value balances switching loss reduction and EMI control; values below 3.3 Ω increase EMI risk without meaningful efficiency gain.

Does STP4N62K3 require an external gate Zener diode?

No - the device integrates a bidirectional Zener clamp between gate and source (±20 V rating per Table 4), verified per ESD HBM 2.5 kV testing. External clamping is unnecessary unless system-level transients exceed ±30 V gate-source rating, which violates absolute maximum ratings.

Can STP4N62K3 be used in synchronous rectification?

No - STP4N62K3 is a high-voltage N-channel MOSFET optimized for primary-side switching, not secondary-side synchronous rectification. Its 620 V V_DS, 2 Ω R_DS(on), and slow body diode (t_rr = 220 ns) make it unsuitable for low-V_DS, low-R_DS(on), fast-recovery SR applications; dedicated 60–150 V SR controllers are required instead.

STP4N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.95Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP4N62K3 FAQ

1.How can I place an order for STP4N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP4N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP4N62K3 reliable?

The price and inventory of STP4N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP4N62K3 is usually 5 days.

3.What payment methods are accepted for STP4N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP4N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP4N62K3?

STP4N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP4N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP4N62K3?

For technical support, including STP4N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP4N62K3 requirements.

6.How does Aetrix verify that STP4N62K3 is sourced from the original manufacturer or authorized distributors?

All STP4N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP4N62K3 meets industry standards.

7.What is the process for return or replacement of STP4N62K3?

All STP4N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP4N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP4N62K3 part is unused and in its original packaging.

Return procedure for STP4N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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