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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP50NE08

Name: STP50NE08
Brand: STMicroelectronics
SKU: STP50NE08
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP50NE08

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP50NE08.pdf

Description:: MOSFET N-CH 80V 50A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,476

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Product details

Overview

STP50NE08 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 80 V V_DS, 50 A continuous drain current at T_c = 25 °C, and typ. R_DS(on) = 0.020 Ω at V_GS = 10 V. It delivers high-speed switching with 6 V/ns dv/dt capability and is 100% avalanche tested-used in automotive lamp drivers, solenoid control, and DC-DC converters.

For engineers reviewing the STP50NE08 datasheet, STP50NE08 pinout, STP50NE08 application, or STP50NE08 equivalent, key selection criteria include its rugged unclamped inductive switching performance, low gate charge (85 nC), thermal resistance (R_thj-case = 1 °C/W), and automotive-grade reliability per ABS/airbag system requirements.

Technical Context

This MOSFET employs ST's proprietary "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining robust avalanche energy handling (E_AS = 300 mJ). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard logic-level drive.

The device features fast switching dynamics: t_d(on) = 37–50 ns, t_r = 95–130 ns, and Q_g = 85–110 nC, enabling efficient operation in hard-switched DC-DC topologies up to several hundred kHz. The source-drain diode supports synchronous rectification with t_rr = 100–400 ns and Q_rr = 8 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - maximum blocking voltage in high-side switch configurations without derating below 125 °C junction temperature
R_DS(on)	0.020 Ω (typ.) at V_GS = 10 V - enables ≤1 W conduction loss at 50 A, critical for thermally constrained motor drives
I_D (cont.)	50 A at T_c = 25 °C - supports high-current solenoid actuation with minimal heatsink area
E_AS	300 mJ - withstands repetitive unclamped inductive energy spikes in relay and ignition circuits
Q_g	85 nC (typ.) - reduces gate driver power demand and switching losses in 100–500 kHz SMPS designs
dv/dt	6 V/ns - suppresses false triggering during fast transient events in noisy automotive environments
R_thj-case	1 °C/W - allows direct mounting to chassis or heatsink for 150 W dissipation at ΔT = 150 K

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting hole centered on tab for mechanical stability and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-impedance connection to PCB ground plane; carries full load current with minimal IR drop
Pin 2 (Gate)	Control input for channel conduction	High-impedance node requiring <100 nA leakage drive; sensitive to ESD and layout-induced ringing
Pin 3 (Drain)	Main power output / high-side switching node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 300 mJ and repetitive I_AR ≥ 50 A under defined test conditions
Low R_DS(on) at 100 °C	R_DS(on) remains <0.024 Ω at elevated case temperature-critical for sustained automotive under-hood operation
Exceptional dv/dt immunity	6 V/ns rating prevents spurious turn-on during fast voltage transients in ABS or fuel injection systems
Application-oriented characterization	Tested under real-world conditions including unclamped inductive loads and diode recovery waveforms
TO-220 mechanical robustness	Rated for 300 °C lead-soldering temperature and >1000 thermal cycles per JEDEC JESD22-A104

Applications

Automotive Lamp Drivers

Solenoid & Relay Control

Use Scenario: High-side switching of 12 V halogen headlamps and LED tail lamps in modern vehicle lighting modules.

IC Role / Device Role / Timing Role: Power switch controlling load current with fast turn-on (<50 ns) and robust overvoltage clamping during load dump.

Use Value: Eliminates need for external snubbers due to 6 V/ns dv/dt immunity and 300 mJ avalanche energy rating.

Use Scenario: Driving 24 V industrial solenoids (e.g., hydraulic valves) requiring 50 A peak current and rapid de-energization.

IC Role / Device Role / Timing Role: Low-R_DS(on) main switch enabling <1 W conduction loss; integrated body diode handles flyback energy.

Use Value: Reduces heatsink size by 40% vs. comparable 0.035 Ω MOSFETs at 35 A continuous current.

DC-DC Converters

Motor Control (BLDC)

Use Scenario: Primary-side switch in 48 V–12 V buck converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250 kHz with Q_g = 85 nC and t_r = 95 ns.

Use Value: Enables <92% efficiency at 40 A output with gate driver ICs like STGAP2SIC

Use Scenario: Half-bridge low-side switch in 24 V brushless DC motor controllers for power tools and HVAC blowers.

IC Role / Device Role / Timing Role: Sustained 35 A current at T_c = 100 °C with R_thj-case = 1 °C/W for compact heatsink integration.

Use Value: Supports 10 s overload pulses up to 200 A without SOA violation per datasheet Figure 8.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 0.044 Ω (higher), Q_g = 71 nC (lower), V_DS = 100 V	Better voltage margin but 120% higher conduction loss at 50 A	Preferable where 100 V rating is mandatory and thermal headroom exists
STP40NF10	V_DS = 100 V, R_DS(on) = 0.027 Ω, E_AS = 250 mJ (lower)	Higher voltage rating but reduced avalanche ruggedness and higher on-resistance	Acceptable for non-automotive 100 V applications with lower surge stress

Compared with IRF540N and STP40NF10, STP50NE08 offers the lowest R_DS(on) at 80 V rating and highest guaranteed avalanche energy-making it optimal for thermally constrained, high-reliability automotive and industrial switching where 80 V suffices.

Availability

STP50NE08 is available at Aetrix Electronics and suitable for automotive lamp drivers, solenoid control, and DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for STP50NE08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STP50NE08 belongs to ST's "STripFET™ II" power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in harsh automotive and industrial environments.

FAQ

Is STP50NE08 still in active production?

No-STP50NE08 is marked "Obsolete Product(s)" in the official ST datasheet revision dated March 1998. It is no longer manufactured by STMicroelectronics, though legacy stock may be available through authorized distributors and independent suppliers with full traceability.

What is the maximum safe operating temperature for STP50NE08?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –65 °C to +175 °C. Continuous operation above 150 °C junction temperature requires derating ID to ≤35 A and verifying SOA compliance per Figure 8 in the datasheet.

Can STP50NE08 be used with 5 V logic-level gate drive?

No-its gate threshold voltage is 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) ≤ 0.024 Ω. At 5 V, R_DS(on) rises significantly (>0.08 Ω), increasing conduction loss and thermal stress beyond safe limits.

Does STP50NE08 have a built-in body diode?

Yes-it integrates a fast, avalanche-rated source-drain diode with t_rr = 100–400 ns and Q_rr = 8 nC at T_j = 150 °C. This diode is fully characterized for inductive flyback and synchronous rectification use, but not optimized for high-frequency freewheeling.

STP50NE08 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP50NE08 FAQ

1.How can I place an order for STP50NE08 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP50NE08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP50NE08 reliable?

The price and inventory of STP50NE08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP50NE08 is usually 5 days.

3.What payment methods are accepted for STP50NE08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP50NE08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP50NE08?

STP50NE08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP50NE08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP50NE08?

For technical support, including STP50NE08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP50NE08 requirements.

6.How does Aetrix verify that STP50NE08 is sourced from the original manufacturer or authorized distributors?

All STP50NE08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP50NE08 meets industry standards.

7.What is the process for return or replacement of STP50NE08?

All STP50NE08 units undergo pre-shipment inspection (PSI). If there is an issue with STP50NE08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP50NE08 part is unused and in its original packaging.

Return procedure for STP50NE08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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