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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP5N52K3

Name: STP5N52K3
Brand: STMicroelectronics
SKU: STP5N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP5N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP5N52K3.pdf

Description:: MOSFET N-CH 525V 4.4A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:2,098

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Product details

Overview

STP5N52K3 from STMicroelectronics is an N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET in TO-220 package, designed for high-voltage switching applications requiring robust avalanche capability and low gate charge. It delivers 70 W total dissipation at T_C = 25 °C and features integrated Zener-protected gate, 12 V/ns dv/dt immunity, and improved diode reverse recovery (t_rr = 210 ns).

For engineers reviewing the STP5N52K3 datasheet, STP5N52K3 pinout, STP5N52K3 application, or STP5N52K3 equivalent, key selection criteria include its 525 V V_DSS, 1.2 Ω R_DS(on) at V_GS = 10 V, 100 mJ single-pulse avalanche energy, and TO-220 thermal resistance of 1.79 °C/W - critical for flyback SMPS, AC-DC adapters, and industrial motor control designs.

Technical Context

This MOSFET employs ST's SuperMESH3™ vertical structure, combining optimized cell layout and enhanced epitaxial doping to achieve ultra-low on-resistance while maintaining high voltage blocking. Its dynamic performance is characterized by C_iss = 545 pF, Q_g = 17 nC, and fast switching (t_d(on) = 9 ns, t_f = 16 ns) under 4.7 Ω gate drive.

The integrated back-to-back Zener diodes clamp gate-source voltage to ±30 V, eliminating need for external protection. Diode recovery is optimized with I_RRM = 12 A and Q_rr = 1.3 µC at T_J = 25 °C, enabling reliable operation in hard-switched inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	525 V - supports primary-side switching in universal-input offline SMPS up to 380 V DC bus.
R_DS(on) max	1.5 Ω - ensures <1.2 Ω typical conduction loss at 2.2 A, minimizing thermal stress in continuous 4.4 A operation.
I_D (continuous)	4.4 A at T_C = 25 °C - enables compact heatsink design when paired with TO-220's 1.79 °C/W R_thj-case.
E_AS	100 mJ - withstands unclamped inductive switching events without failure, critical for relay drivers and solenoid controls.
Q_g	17 nC - reduces gate drive power and enables efficient operation with standard 10 V logic-level drivers.
t_rr	210 ns - limits diode recovery loss and EMI in high-frequency converters operating above 100 kHz.
dv/dt immunity	12 V/ns - prevents spurious turn-on during fast transient voltage spikes in noisy industrial environments.

Pinout & Package

STP5N52K3 uses a TO-220 package with standard 3-pin configuration: Drain (pin 2), Gate (pin 1), Source (pin 3). The case is electrically connected to the Drain terminal, requiring insulated mounting in floating-drain topologies.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control input; accepts 10 V drive for full enhancement; protected by integrated 30 V Zener diode.
Pin 2 (D)	Drain	High-voltage output node; electrically tied to TO-220 metal tab; requires isolation washer if mounted to heatsink.
Pin 3 (S)	Source	Power return path and reference for gate drive; forms common node with internal body diode cathode.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive kickback without derating - eliminates need for external snubbers in relay/solenoid drivers.
Extremely high dv/dt capability	12 V/ns rating prevents false triggering in high-noise motor drives and industrial PLC outputs.
Gate charge minimized	17 nC Q_g enables fast switching with low driver power consumption - ideal for space-constrained adapter designs.
Improved diode reverse recovery	210 ns t_rr and 1.3 µC Q_rr reduce switching loss and EMI in flyback and forward converters.
Zener-protected gate	Integrated ±30 V clamping eliminates external TVS - simplifies BOM and improves long-term reliability in field-deployed equipment.

Applications

AC-DC Adapters

Flyback SMPS

Use Scenario: Universal-input (85–265 V AC) offline power supplies for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 525 V V_DSS and 100 mJ E_AS ensure safe operation during line surges and transformer leakage spikes without overdesign.

Use Scenario: Isolated DC-DC converters in industrial automation controllers.

IC Role / Device Role / Timing Role: Main switching element synchronized to PWM controller at 65–130 kHz.

Use Value: Low 1.2 Ω R_DS(on) and 17 nC Q_g minimize conduction and switching losses, enabling >88% efficiency at full load.

Motor Control Outputs

Relay/Solenoid Drivers

Use Scenario: Half-bridge gate drivers for BLDC fans and small pumps in HVAC systems.

IC Role / Device Role / Timing Role: High-side or low-side switching device in 24–48 V DC motor interface circuits.

Use Value: 12 V/ns dv/dt immunity prevents shoot-through during fast bus transients; integrated Zener avoids gate oxide damage.

Use Scenario: Solid-state replacements for electromechanical relays in building management systems.

IC Role / Device Role / Timing Role: Inductive load switch with built-in freewheeling path via source-drain diode.

Use Value: Optimized t_rr = 210 ns and Q_rr = 1.3 µC suppress voltage overshoot and contact arcing, extending system lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50Z	500 V V_DSS, 1.4 Ω R_DS(on), 120 mJ E_AS, same TO-220 package	Lower voltage rating limits use in 380 V DC bus designs; higher avalanche energy suits repetitive surge conditions	Select when operating below 400 V DC and prioritizing surge margin over peak voltage headroom
IPP50R190CP	500 V V_DSS, 0.19 Ω R_DS(on), 140 mJ E_AS, TO-220FP package with isolated tab	Lower R_DS(on) reduces conduction loss but requires different thermal interface; FP variant offers lower profile	Choose for high-efficiency, high-current (>6 A) designs where board height constraints favor TO-220FP

Compared with STP5N52K3, STP5NK50Z trades 25 V voltage headroom for +20 mJ avalanche margin, while IPP50R190CP delivers 6× lower on-resistance at the cost of higher gate charge (38 nC) and no integrated Zener protection - demanding careful gate drive design.

Availability

STP5N52K3 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and motor control outputs requiring stable component supply across industrial and consumer production programs.

Supply support for STP5N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

STP5N52K3 belongs to the SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion and industrial actuation systems.

FAQ

What is the maximum continuous drain current for STP5N52K3 at 100 °C case temperature?

The maximum continuous drain current is 2.77 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package, where junction-to-case thermal resistance is 1.79 °C/W and maximum allowable junction temperature is 150 °C.

Does STP5N52K3 require external gate protection?

No. STP5N52K3 integrates back-to-back Zener diodes between gate and source with a breakdown voltage of 30 V (±1 V), providing inherent protection against electrostatic discharge and gate overvoltage transients - eliminating the need for external TVS diodes in most applications.

Can STP5N52K3 be used in synchronous rectification topologies?

No. STP5N52K3 is not optimized for synchronous rectification due to its relatively high R_DS(on) (1.2 Ω) and non-specified body diode forward voltage at low currents. Its design targets primary-side switching, not secondary-side low-loss conduction.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited to 4.4 A at 420 V V_DS for TO-220 package, per Figure 2. This boundary is defined by both thermal constraints and maximum R_DS(on), not avalanche capability - ensuring reliable operation without secondary breakdown.

STP5N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP5N52K3 FAQ

1.How can I place an order for STP5N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP5N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP5N52K3 reliable?

The price and inventory of STP5N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP5N52K3 is usually 5 days.

3.What payment methods are accepted for STP5N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP5N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP5N52K3?

STP5N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP5N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP5N52K3?

For technical support, including STP5N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP5N52K3 requirements.

6.How does Aetrix verify that STP5N52K3 is sourced from the original manufacturer or authorized distributors?

All STP5N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP5N52K3 meets industry standards.

7.What is the process for return or replacement of STP5N52K3?

All STP5N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP5N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP5N52K3 part is unused and in its original packaging.

Return procedure for STP5N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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