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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP5NB60

Name: STP5NB60
Brand: STMicroelectronics
SKU: STP5NB60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP5NB60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP5NB60.pdf

Description:: MOSFET N-CH 600V 5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP5NB60 from STMicroelectronics is an N-channel 600 V, 5 A PowerMESH™ MOSFET in TO-220 package with R_DS(on) = 1.8 Ω (typ), 100% avalanche tested, and 4.5 V/ns dv/dt capability-designed for high-speed switching in SMPS and welding inverters.

For engineers reviewing the STP5NB60 datasheet, STP5NB60 pinout, STP5NB60 application, or STP5NB60 equivalent, key selection criteria include its 600 V V_DSS, low gate charge (21 nC typ), avalanche ruggedness (300 mJ E_AS), and thermal resistance (1.25 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process with strip layout and edge termination to minimize R_DS(on) per die area and maximize dv/dt immunity. Its intrinsic capacitances are optimized: C_iss = 680 pF (typ), C_oss = 103 pF (typ), C_rss = 10.5 pF (typ) at V_DS = 25 V.

Switching performance is characterized by t_d(on) = 12 ns (typ), t_r = 10 ns (typ), t_f = 13 ns (typ), and Q_gd = 7.5 nC (typ)-enabling efficient operation in hard-switched 300–480 V DC-link topologies with minimal gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V AC input rectified rails with 50% safety margin
R_DS(on)	1.8 Ω (typ) - enables <5 W conduction loss at 5 A continuous drain current
I_D (T_c = 25°C)	5 A - rated for sustained output stage current in 100 W SMPS designs
E_AS	300 mJ - withstands unclamped inductive switching stress without failure
Q_g	21 nC (typ) - reduces gate driver power requirement and switching transition time
dv/dt	4.5 V/ns - ensures noise-immune operation in high-di/dt motor drive and welding circuits
R_thj-case	1.25 °C/W - allows 100 W dissipation with ≤125°C junction rise above 25°C case temperature

Pinout & Package

TO-220 package (3-pin, straight lead, insulated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; sensitive to ESD
Pin 2	Drain	High-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential
Pin 3	Source	Power return path and reference for gate drive; defines local ground for gate-source voltage

Key Features

Feature	Design Value
PowerMESH™ process	Delivers lowest R_DS(on)/area among 600 V MOSFETs of comparable die size, improving power density
100% avalanche tested	Guarantees robustness against inductive turn-off transients without derating or external snubbers
Low C_rss (10.5 pF)	Minimizes Miller effect, enabling stable high-speed switching with moderate gate resistance
Very low C_oss (103 pF)	Reduces turn-off energy loss and improves efficiency in resonant and quasi-resonant converters
High dv/dt immunity (4.5 V/ns)	Prevents false turn-on during fast voltage transitions in half-bridge configurations

Applications

Industrial SMPS

DC-AC Welding Inverters

Use Scenario: 50–200 W offline flyback or forward converter supplying control logic and gate drivers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus with 50 kHz–200 kHz switching.

Use Value: 1.8 Ω R_DS(on) limits conduction loss to <4.5 W at full load; avalanche rating eliminates need for clamping diodes.

Use Scenario: Single-phase IGBT/MOSFET inverter stage converting 300–400 V DC to 20–100 kHz AC for arc stabilization.

IC Role / Device Role / Timing Role: Hard-switched bridge leg switch subjected to repetitive inductive recovery and high di/dt.

Use Value: 4.5 V/ns dv/dt rating and 300 mJ E_AS ensure reliable operation under 200 A/µs di/dt conditions without desaturation.

UPS Output Stage

Motor Drive Half-Bridge

Use Scenario: Line-interactive UPS with boost/buck converter regulating 120/230 V AC output from battery-derived DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET in 300–400 V DC link with bidirectional energy flow.

Use Value: Low Q_g (21 nC) enables efficient gate driving at 50–100 kHz; low C_iss minimizes capacitive coupling noise.

Use Scenario: 1–3 kW BLDC or induction motor drive using 600 V three-phase inverter topology.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration requiring high V_DS blocking and fast commutation.

Use Value: 600 V rating accommodates 400 V DC bus + 50% overvoltage margin; low R_DS(on) reduces thermal stress at 5 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60Z	R_DS(on) = 1.2 Ω (typ), higher ID (6 A), Zener-protected gate, slightly higher Q_g (32 nC)	Better conduction efficiency at >4 A; improved ESD robustness but higher gate drive demand	Select when lower R_DS(on) and gate protection outweigh gate charge penalty
FQP5N60C	R_DS(on) = 2.0 Ω (max), lower cost, no avalanche rating, higher C_oss (120 pF)	Not rated for repetitive avalanche; unsuitable for unclamped inductive loads without snubbers	Select only for non-avalanche-critical, cost-sensitive SMPS with soft-switching or low di/dt

Compared with STP6NK60Z and FQP5N60C, STP5NB60 offers balanced trade-offs: verified avalanche ruggedness for reliability in harsh switching, moderate gate charge for driver simplicity, and proven thermal performance in TO-220-making it optimal for industrial-grade SMPS and welding inverters where field failure risk must be minimized.

Availability

STP5NB60 is available at Aetrix Electronics and suitable for industrial SMPS, DC-AC welding inverters, and UPS output stages requiring stable component supply and long-term design continuity.

Supply support for STP5NB60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The PowerMESH™ MOSFET product line targets high-reliability, high-efficiency power conversion-specifically engineered for ruggedized switching in SMPS, motor drives, and uninterruptible power systems.

FAQ

Is STP5NB60 still in active production?

No-STP5NB60 is marked obsolete in ST's official documentation (STP5NB60/FP datasheet Rev. 9, 2001). However, Aetrix Electronics maintains legacy inventory with full traceability and provides extended lifecycle support including cross-reference guidance and obsolescence mitigation planning.

What is the maximum safe operating junction temperature?

The absolute maximum junction temperature is 150 °C. Operation above this limit risks permanent degradation of the silicon die and oxide integrity. Thermal design must ensure T_j ≤ 150 °C under worst-case ambient, power dissipation, and heatsink conditions-verified via R_thj-case = 1.25 °C/W and derating curves.

Can STP5NB60 replace STP5NB60FP in a TO-220FP footprint?

No-STP5NB60 uses standard TO-220 (non-isolated tab), while STP5NB60FP uses TO-220FP (fully insulated tab, R_thj-amb = 62.5 °C/W). Mechanical fit is identical, but electrical isolation differs: STP5NB60 requires insulating washer; STP5NB60FP does not. Substitution requires PCB and thermal redesign.

Does STP5NB60 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω, as used in datasheet switching tests) is required to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. Omitting it risks oscillation, shoot-through in bridge configurations, and accelerated gate oxide wear due to voltage overshoot.

STP5NB60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 884 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP5NB60 FAQ

1.How can I place an order for STP5NB60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP5NB60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP5NB60 reliable?

The price and inventory of STP5NB60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP5NB60 is usually 5 days.

3.What payment methods are accepted for STP5NB60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP5NB60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP5NB60?

STP5NB60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP5NB60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP5NB60?

For technical support, including STP5NB60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP5NB60 requirements.

6.How does Aetrix verify that STP5NB60 is sourced from the original manufacturer or authorized distributors?

All STP5NB60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP5NB60 meets industry standards.

7.What is the process for return or replacement of STP5NB60?

All STP5NB60 units undergo pre-shipment inspection (PSI). If there is an issue with STP5NB60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP5NB60 part is unused and in its original packaging.

Return procedure for STP5NB60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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