STMicroelectronics STP60N3LH5

Overview

STP60N3LH5 from STMicroelectronics is an N-channel 30 V, 48 A Power MOSFET in TO-220 package, featuring 0.0084 Ω R_DS(on) at V_GS = 10 V and 24 A, low 12.3 nC total gate charge, and high avalanche ruggedness (160 mJ). It serves as a main switching element in DC-DC converters and motor drive half-bridges where low conduction loss and fast switching are critical.

For engineers reviewing the STP60N3LH5 datasheet, STP60N3LH5 pinout, STP60N3LH5 application, or STP60N3LH5 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, safe operating area under pulsed load, thermal resistance (2.5 °C/W junction-to-case), and source-drain diode recovery performance (25 ns trr, 18.5 nC Q_rr).

Technical Context

This STripFET™ V MOSFET uses optimized trench-gate process to achieve industry-leading R_DS(on) × Q_g figure of merit. Its gate threshold voltage (1–3 V) enables compatibility with 5 V and 10 V logic-level drivers, while its 35 V V_DS rating at T_JMAX supports transient overvoltage tolerance in automotive and industrial power rails.

The device integrates a robust intrinsic body diode with 1.1 V forward voltage at 24 A and exhibits controlled reverse recovery (trr = 25 ns, Q_rr = 18.5 nC), minimizing switching losses in synchronous rectification and freewheeling applications without requiring external Schottky supplementation.

Key Specifications

Pinout & Package

STP60N3LH5 is housed in TO-220 type A package (3-pin, through-hole), with tab connected to drain for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF and STP55NF06L, STP60N3LH5 delivers superior R_DS(on) × Q_g FoM and avalanche ruggedness-critical for high-efficiency, high-reliability 30 V switching in motor drives and industrial SMPS where thermal headroom and transient immunity are design priorities.

Availability

STP60N3LH5 is available at Aetrix Electronics and suitable for brushless DC motor drives, automotive body control modules, and industrial DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for STP60N3LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP60N3LH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–48 V systems where low R_DS(on), fast switching, and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP60N3LH5 supports 42.8 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating from the 48 A rating at 25 °C reflects thermal limitations of the TO-220 package and must be applied when heatsink temperature exceeds 75 °C in real-world layouts.

Is the body diode suitable for synchronous rectification?

Yes-the intrinsic body diode has 25 ns reverse recovery time and 18.5 nC reverse recovery charge at I_SD = 48 A, di/dt = 100 A/µs, making it viable for synchronous rectification in non-isolated DC-DC converters up to 300 kHz. However, external Schottky diodes remain preferred for ultra-high-frequency (>500 kHz) or zero-voltage-switching topologies.

Does STP60N3LH5 require a gate resistor for stability?

A gate resistor (typically 4.7 Ω) is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. The datasheet's switching time test conditions (Table 6) specify R_G = 4.7 Ω, confirming this value balances speed and EMI control-lower values increase dV/dt stress and risk shoot-through in bridge configurations.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width, the SOA curve (Figure 2) limits the STP60N3LH5 to approximately 120 A at 10 V V_DS and 60 A at 25 V V_DS. This is defined by both thermal and avalanche constraints; exceeding these boundaries risks single-pulse failure due to localized hot-spot formation or drain-source breakdown.