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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP60NE06-16

Name: STP60NE06-16
Brand: STMicroelectronics
SKU: STP60NE06-16
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP60NE06-16

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP60NE06-16.pdf

Description:: MOSFET N-CH 60V 60A TO220AB

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Product details

Overview

STP60NE06-16 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 60 V V_DSS, 60 A continuous drain current at T_C = 25 °C, and 0.013 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, high dv/dt capability (6 V/ns), and low gate charge (115–160 nC), enabling robust switching in high-current DC-DC converters and motor drives.

For engineers reviewing the STP60NE06-16 datasheet, STP60NE06-16 pinout, STP60NE06-16 application, or STP60NE06-16 equivalent, key selection criteria include its 60 V breakdown voltage, 60 A thermal-limited conduction capability, TO-220 mechanical footprint, avalanche energy rating (350 mJ), and gate threshold voltage range (2–4 V) under real operating conditions.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining excellent avalanche ruggedness and manufacturing reproducibility. Its internal structure supports unclamped inductive switching with guaranteed repetitive avalanche current up to 60 A and single-pulse energy of 350 mJ at T_j = 25 °C.

The device is characterized for synchronous rectification and hard-switched topologies, featuring fast switching times (t_r = 125–180 ns, t_f = 150–210 ns) and low output capacitance (C_oss = 580–800 pF), optimized for efficiency in 30–48 V input DC-DC stages and brushed DC motor H-bridge legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems
R_DS(on) (typ)	0.013 Ω - Enables <1 W conduction loss at 30 A, critical for thermally constrained TO-220 layouts
I_D (cont, T_C=25°C)	60 A - Continuous current rating at heatsink base; derates to 42 A at 100 °C case temperature
E_AS	350 mJ - Single-pulse avalanche energy; supports reliable operation during inductive turn-off transients
Q_g	115–160 nC - Total gate charge determines driver strength requirement and switching loss trade-off
dv/dt Rating	6 V/ns - Confirmed immunity to false turn-on during fast voltage transients in noisy power stages
T_j(max)	175 °C - Junction temperature limit enabling operation in industrial ambient environments up to 125 °C

Pinout & Package

STP60NE06-16 uses a standard TO-220 package with three leads: Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control electrode; requires ≥10 V drive for full enhancement; gate-source leakage ≤ ±100 nA at ±20 V
Pin 2 (D)	Drain	Main high-side current path; electrically tied to metal tab; rated for 60 V blocking and 240 A pulsed current
Pin 3 (S)	Source	Reference node for gate drive and current sensing; forms intrinsic body diode anode with Drain as cathode

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees minimum 350 mJ single-pulse energy handling without parametric shift or failure
Low R_DS(on) (0.013 Ω typ)	Reduces conduction losses by >30% vs. comparable 60 V MOSFETs, improving thermal margin in compact designs
High dv/dt Immunity (6 V/ns)	Prevents spurious turn-on during fast switching edges in half-bridge configurations without snubbers
TO-220 Mechanical Standard	Enables drop-in replacement in legacy PCB footprints and compatibility with widely available heatsinks
Body Diode t_rr = 100 ns	Supports synchronous rectification in buck converters up to ~200 kHz without excessive reverse recovery loss

Applications

DC Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge driver in industrial actuators requiring bidirectional 60 A peak current.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles PWM commutation at 10–20 kHz with body diode freewheeling.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; avalanche rating protects against back-EMF spikes during abrupt stops.

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch; operates with 100–200 kHz PWM and gate drive referenced to source.

Use Value: Fast switching (t_r/t_f < 200 ns) and low Q_g reduce total switching loss; C_oss < 800 pF limits capacitive turn-on loss.

Synchronous Rectification

Uninterruptible Power Supplies

Use Scenario: Secondary-side synchronous rectifier in isolated forward or LLC resonant converter delivering 50 A at 5–12 V.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode; driven with precise timing relative to primary switch.

Use Value: Body diode V_SD = 1.5 V at 60 A enables lower forward drop than 45 V Schottky; t_rr = 100 ns prevents cross-conduction loss.

Use Scenario: Inverter stage in line-interactive UPS converting 48 V battery to 230 V AC via full-bridge topology.

IC Role / Device Role / Timing Role: Output bridge switch; conducts 60 A RMS with 50/60 Hz fundamental and harmonic content.

Use Value: 175 °C T_j(max) and 60 A continuous rating support sustained overload; avalanche ruggedness absorbs grid-spike transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	R_DS(on) = 0.028 Ω (higher); Q_g = 67 nC (lower); T_j(max) = 175 °C same	Lower switching loss but higher conduction loss above 25 A; less suitable for high-current DC motor control	Prefer when gate drive is weak or switching frequency >250 kHz; avoid where I_D >40 A is routine
STP60NF06	Same die family; identical R_DS(on), V_DSS, and avalanche rating; TO-220FP variant with lower P_tot (40 W)	Reduced thermal capability (35 A @ 25 °C); intended for space-constrained, lower-power versions	Select only if board layout mandates TO-220FP footprint and peak current ≤35 A

Compared with IRFZ44N and STP60NF06, STP60NE06-16 delivers superior conduction efficiency at high load currents due to its 0.013 Ω R_DS(on), while maintaining full 60 A capability and matching avalanche robustness-making it optimal for thermally demanding, high-reliability 48 V power stages.

Availability

STP60NE06-16 is available at Aetrix Electronics and suitable for DC motor control, DC-DC converters, and synchronous rectification applications requiring stable component supply and long-term industrial availability.

Supply support for STP60NE06-16 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to ST's "STripFET™ II" power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and telecom power conversion systems.

FAQ

Is STP60NE06-16 suitable for use in a synchronous buck converter operating at 200 kHz?

Yes. With t_r = 125–180 ns, t_f = 150–210 ns, and Q_g = 115–160 nC, it supports efficient 200 kHz operation when paired with a capable gate driver (e.g., 2 A peak sink/source). Its low C_oss (580–800 pF) further reduces turn-on loss at this frequency.

What is the maximum safe continuous drain current at 85 °C case temperature?

Based on the derating curve and absolute maximum ratings, I_D at T_C = 85 °C is approximately 49 A. This is calculated from the linear derating factor (1 W/°C) applied to P_tot = 150 W at 25 °C, yielding ~115 W at 85 °C, then solving I = √(P × R_DS(on)) using R_DS(on) = 0.016 Ω max.

Does the device require external gate resistors for stability in hard-switched applications?

Yes. A series gate resistor (typically 4.7–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies switching times with R_G = 4.7 Ω, confirming this value as a validated design point for EMI and shoot-through mitigation.

Can STP60NE06-16 replace STP60NF06 in an existing design?

Yes, with verification of thermal margin. Both share identical pinout, V_DSS, R_DS(on), and avalanche specs, but STP60NE06-16 offers higher continuous current (60 A vs. 35 A) and power dissipation (150 W vs. 40 W), making it a direct upgrade where heatsinking supports the increased power.

STP60NE06-16 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP60NE06-16 FAQ

1.How can I place an order for STP60NE06-16 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP60NE06-16 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP60NE06-16 reliable?

The price and inventory of STP60NE06-16 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP60NE06-16 is usually 5 days.

3.What payment methods are accepted for STP60NE06-16?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP60NE06-16 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP60NE06-16?

STP60NE06-16 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP60NE06-16 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP60NE06-16?

For technical support, including STP60NE06-16 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP60NE06-16 requirements.

6.How does Aetrix verify that STP60NE06-16 is sourced from the original manufacturer or authorized distributors?

All STP60NE06-16 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP60NE06-16 meets industry standards.

7.What is the process for return or replacement of STP60NE06-16?

All STP60NE06-16 units undergo pre-shipment inspection (PSI). If there is an issue with STP60NE06-16, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP60NE06-16 part is unused and in its original packaging.

Return procedure for STP60NE06-16:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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